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Title: Thin-Film Module Reverse-Bias Breakdown Sites Identified by Thermal Imaging: Preprint

Abstract

Thin-film module sections are stressed under reverse bias to simulate partial shading conditions. Such stresses can cause permanent damage in the form of 'wormlike' defects due to thermal runaway. When large reverse biases with limited current are applied to the cells, dark lock-in thermography (DLIT) can detect where spatially-localized breakdown initiates before thermal runaway leads to permanent damage. Predicted breakdown defect sites have been identified in both CIGS and CdTe modules using DLIT. These defects include small pinholes, craters, or voids in the absorber layer of the film that lead to built-in areas of weakness where high current densities may cause thermal damage in a partial-shading event.

Authors:
 [1];  [1];  [1];  [1]; ORCiD logo [1];  [1];  [1];  [2];  [3];  [2]
  1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
  2. Colorado School of Mines
  3. IEK5-Photovoltaics
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1457120
Report Number(s):
NREL/CP-5K00-70866
DOE Contract Number:
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 2018 World Conference on Photovoltaic Energy Conversion (WCPEC-7), 10-15 June 2018, Waikoloa, Hawaii
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; imaging; photovoltaic cells; photo-luminescence; electroluminescence; reliability; accelerated aging; II-VI semiconductor materials; thermal analysis; breakdown voltage

Citation Formats

Johnston, Steven, Sulas, Dana, Guthrey, Harvey L, Liu, Jun, Mansfield, Lorelle M, Silverman, Timothy J, Al-Jassim, Mowafak M, Palmiotti, Elizabeth, Gerber, Andreas, and Rockett, Angus. Thin-Film Module Reverse-Bias Breakdown Sites Identified by Thermal Imaging: Preprint. United States: N. p., 2018. Web.
Johnston, Steven, Sulas, Dana, Guthrey, Harvey L, Liu, Jun, Mansfield, Lorelle M, Silverman, Timothy J, Al-Jassim, Mowafak M, Palmiotti, Elizabeth, Gerber, Andreas, & Rockett, Angus. Thin-Film Module Reverse-Bias Breakdown Sites Identified by Thermal Imaging: Preprint. United States.
Johnston, Steven, Sulas, Dana, Guthrey, Harvey L, Liu, Jun, Mansfield, Lorelle M, Silverman, Timothy J, Al-Jassim, Mowafak M, Palmiotti, Elizabeth, Gerber, Andreas, and Rockett, Angus. Tue . "Thin-Film Module Reverse-Bias Breakdown Sites Identified by Thermal Imaging: Preprint". United States. doi:. https://www.osti.gov/servlets/purl/1457120.
@article{osti_1457120,
title = {Thin-Film Module Reverse-Bias Breakdown Sites Identified by Thermal Imaging: Preprint},
author = {Johnston, Steven and Sulas, Dana and Guthrey, Harvey L and Liu, Jun and Mansfield, Lorelle M and Silverman, Timothy J and Al-Jassim, Mowafak M and Palmiotti, Elizabeth and Gerber, Andreas and Rockett, Angus},
abstractNote = {Thin-film module sections are stressed under reverse bias to simulate partial shading conditions. Such stresses can cause permanent damage in the form of 'wormlike' defects due to thermal runaway. When large reverse biases with limited current are applied to the cells, dark lock-in thermography (DLIT) can detect where spatially-localized breakdown initiates before thermal runaway leads to permanent damage. Predicted breakdown defect sites have been identified in both CIGS and CdTe modules using DLIT. These defects include small pinholes, craters, or voids in the absorber layer of the film that lead to built-in areas of weakness where high current densities may cause thermal damage in a partial-shading event.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 19 00:00:00 EDT 2018},
month = {Tue Jun 19 00:00:00 EDT 2018}
}

Conference:
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