Reduction in the Number of Mg Acceptors with Al Concentration in Al x Ga1-x N
Abstract
High hole concentrations in Al x Ga1-x N become increasingly difficult to obtain as the Al mole fraction increases. The problem is believed to be related to compensation, extended defects, and the band gap of the alloy. Whereas electrical measurements are commonly used to measure hole density, we used electron paramagnetic resonance (EPR) spectroscopy to investigate a defect related to the neutral Mg acceptor. The amount and symmetry of neutral Mg in MOCVD-grown Al x Ga1-x N with x = 0 to 0.28 was monitored for films with different dislocation densities and surface conditions. EPR measurements indicated that the amount of neutral Mg decreased by 60% in 900°C-annealed Al x Ga1-x N films for x = 0.18 and 0.28 as compared with x = 0.00 and 0.08. A decrease in the angular dependence of the EPR signal accompanied the increased x, suggesting a change in the local environment of the Mg. Neither dislocation density nor annealing conditions contribute to the reduced amount of neutral Mg in samples with the higher Al concentration. Rather, compensation is the simplest explanation of the observations, because a donor could both reduce the number of neutral acceptors and cause the variation in the angular dependence.
- Authors:
-
- Univ. of Alabama, Birmingham, AL (United States). Dept. of Physics
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Alabama, Birmingham, AL (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)
- OSTI Identifier:
- 1497640
- Report Number(s):
- SAND2014-17634J
Journal ID: ISSN 0361-5235; 672373
- Grant/Contract Number:
- AC04-94AL85000; DMR1006163
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Electronic Materials
- Additional Journal Information:
- Journal Volume: 44; Journal Issue: 11; Journal ID: ISSN 0361-5235
- Publisher:
- Springer
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; nitride; p-type; GaN; Mg; magnetic resonance
Citation Formats
Sunay, U. R., Zvanut, M. E., and Allerman, A. A. Reduction in the Number of Mg Acceptors with Al Concentration in Al x Ga1-x N. United States: N. p., 2014.
Web. doi:10.1007/s11664-014-3475-9.
Sunay, U. R., Zvanut, M. E., & Allerman, A. A. Reduction in the Number of Mg Acceptors with Al Concentration in Al x Ga1-x N. United States. https://doi.org/10.1007/s11664-014-3475-9
Sunay, U. R., Zvanut, M. E., and Allerman, A. A. Sat .
"Reduction in the Number of Mg Acceptors with Al Concentration in Al x Ga1-x N". United States. https://doi.org/10.1007/s11664-014-3475-9. https://www.osti.gov/servlets/purl/1497640.
@article{osti_1497640,
title = {Reduction in the Number of Mg Acceptors with Al Concentration in Al x Ga1-x N},
author = {Sunay, U. R. and Zvanut, M. E. and Allerman, A. A.},
abstractNote = {High hole concentrations in Al x Ga1-x N become increasingly difficult to obtain as the Al mole fraction increases. The problem is believed to be related to compensation, extended defects, and the band gap of the alloy. Whereas electrical measurements are commonly used to measure hole density, we used electron paramagnetic resonance (EPR) spectroscopy to investigate a defect related to the neutral Mg acceptor. The amount and symmetry of neutral Mg in MOCVD-grown Al x Ga1-x N with x = 0 to 0.28 was monitored for films with different dislocation densities and surface conditions. EPR measurements indicated that the amount of neutral Mg decreased by 60% in 900°C-annealed Al x Ga1-x N films for x = 0.18 and 0.28 as compared with x = 0.00 and 0.08. A decrease in the angular dependence of the EPR signal accompanied the increased x, suggesting a change in the local environment of the Mg. Neither dislocation density nor annealing conditions contribute to the reduced amount of neutral Mg in samples with the higher Al concentration. Rather, compensation is the simplest explanation of the observations, because a donor could both reduce the number of neutral acceptors and cause the variation in the angular dependence.},
doi = {10.1007/s11664-014-3475-9},
journal = {Journal of Electronic Materials},
number = 11,
volume = 44,
place = {United States},
year = {Sat Nov 01 00:00:00 EDT 2014},
month = {Sat Nov 01 00:00:00 EDT 2014}
}
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