Growth and doping of Al{sub x}Ga{sub 1{minus}x}N deposited directly on {alpha}(6H)-SiC(0001) substrates via organometallic vapor phase epitaxy
- North Carolina State Univ., Raleigh, NC (United States)
- Univ. of North Carolina, Chapel Hill, NC (United States). Dept. of Physics and Astronomy
Monocrystalline Al{sub x}Ga{sub 1{minus}x}N(0001) (0.05 {le} x {le} 0.70) thin films, void of oriented domain structures and associated low-angle grain boundaries, have been grown at high temperatures via OMVPE directly on vicinal and on-axis {alpha}(6H)-SiC(0001) wafers using TEG, TEA and ammonia in a cold-wall, vertical, pancake-style reactor. The surface morphologies were smooth and the densities and distributions of dislocations were comparable to that observed in GaN(0001) films grown on high temperature AlN buffer layers. Double-crystal XRC measurements showed a FWHM value as low as 186 arc sec for the (0002) reflection. Spectra obtained via CL showed strong near band-edge emissions with FWHM values as low as 31 meV. The compositions of the Al{sub x}Ga{sub 1{minus}x}N films were determined using EDX, AES and RBS and compared to the values of the bandgap as measured by spectral ellipsometry and Cl emissions. A negative bowing parameter was found. Controlled n-type, Si-doping of Al{sub x}Ga{sub 1{minus}x}N for x {le} 0.4 has been achieved with net carrier concentrations ranging from {approx} 2 {times} 10{sup 17} cm{sup {minus}3} to 2 {times} 10{sup 19} cm{sup {minus}3}. Acceptor doping with Mg for x , 0.13 was also successful.
- OSTI ID:
- 394951
- Report Number(s):
- CONF-951155-; ISBN 1-55899-298-7; TRN: IM9648%%28
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Gallium nitride and related materials; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Dupuis, R.D. [ed.] [Univ. of Texas, Austin, TX (United States)]; Nakamura, S. [ed.] [Nichia Chemical Industries, Tokushima (Japan)]; Edmond, J.A. [ed.] [Cree Research, Inc., Durham, NC (United States)]; PB: 993 p.; Materials Research Society symposium proceedings, Volume 395
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
ALUMINIUM NITRIDES
CHEMICAL VAPOR DEPOSITION
MICROSTRUCTURE
ELECTRICAL PROPERTIES
OPTICAL PROPERTIES
GALLIUM NITRIDES
ELECTRONIC EQUIPMENT
SEMICONDUCTOR MATERIALS
SURFACE CLEANING
ORGANOMETALLIC COMPOUNDS
AMMONIA
HYDROGEN
DOPED MATERIALS
MAGNESIUM
SCANNING ELECTRON MICROSCOPY
X-RAY SPECTROSCOPY
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
ELLIPSOMETRY
AUGER ELECTRON SPECTROSCOPY
RUTHERFORD SCATTERING
DISLOCATIONS
CARRIER DENSITY