Electronic-grade GaN(0001)/Al{sub 2}O{sub 3}(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target
- Department of Physics, Chemistry, and Biology (IFM), Linkoeping University, SE-58183 Linkoeping (Sweden)
Electronic-grade GaN (0001) epilayers have been grown directly on Al{sub 2}O{sub 3} (0001) substrates by reactive direct-current-magnetron sputter epitaxy (MSE) using a liquid Ga sputtering target in an Ar/N{sub 2} atmosphere. The as-grown GaN epitaxial films exhibit low threading dislocation density on the order of {<=}10{sup 10} cm{sup -2} determined by transmission electron microscopy and modified Williamson-Hall plot. X-ray rocking curve shows narrow full-width at half maximum (FWHM) of 1054 arc sec of the 0002 reflection. A sharp 4 K photoluminescence peak at 3.474 eV with a FWHM of 6.3 meV is attributed to intrinsic GaN band edge emission. The high structural and optical qualities indicate that MSE-grown GaN epilayers can be used for fabricating high-performance devices without the need of any buffer layer.
- OSTI ID:
- 21518373
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 98; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
BUFFERS
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
CURRENTS
DENSITY
DEPOSITION
DIFFRACTION
DIRECT CURRENT
DISLOCATIONS
ELECTRIC CURRENTS
ELECTRON MICROSCOPY
ELECTRON TUBES
ELECTRONIC EQUIPMENT
EMISSION
EPITAXY
EQUIPMENT
FILMS
GALLIUM COMPOUNDS
GALLIUM NITRIDES
LAYERS
LINE DEFECTS
LUMINESCENCE
MAGNETRONS
MATERIALS
MICROSCOPY
MICROWAVE EQUIPMENT
MICROWAVE TUBES
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHOTOLUMINESCENCE
PHOTON EMISSION
PHYSICAL PROPERTIES
PNICTIDES
REFLECTION
SCATTERING
SEMICONDUCTOR MATERIALS
SPUTTERING
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
BUFFERS
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
CURRENTS
DENSITY
DEPOSITION
DIFFRACTION
DIRECT CURRENT
DISLOCATIONS
ELECTRIC CURRENTS
ELECTRON MICROSCOPY
ELECTRON TUBES
ELECTRONIC EQUIPMENT
EMISSION
EPITAXY
EQUIPMENT
FILMS
GALLIUM COMPOUNDS
GALLIUM NITRIDES
LAYERS
LINE DEFECTS
LUMINESCENCE
MAGNETRONS
MATERIALS
MICROSCOPY
MICROWAVE EQUIPMENT
MICROWAVE TUBES
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHOTOLUMINESCENCE
PHOTON EMISSION
PHYSICAL PROPERTIES
PNICTIDES
REFLECTION
SCATTERING
SEMICONDUCTOR MATERIALS
SPUTTERING
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION