Epitaxial growth and structural analysis of AlN/GaN heterostructures
- Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China)
Single crystal AlN thin films were epitaxially grown on GaN/sapphire (0001) substrates on a macroscopic scale by magnetron sputtering. The microscopic structure and orientation degree of the AlN epilayers were studied by high-resolution transmission electron microscopy, high-resolution x-ray diffraction, and reciprocal spacing mapping. It was revealed that the AlN epilayers have high in-plane and out-of-plane orientation degrees and low defect density. The electrical and optical properties of the AlN epilayers were also studied, and the results suggest that the AlN epilayers grown by sputtering may be employed in the fabrication of GaN-based light-emitting diode devices with increased efficiency.
- OSTI ID:
- 21016187
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 91; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Book
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Thu Oct 31 23:00:00 EST 1996
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Related Subjects
36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH
DEPOSITION
EPITAXY
GALLIUM NITRIDES
GRAIN ORIENTATION
LAYERS
LIGHT EMITTING DIODES
MONOCRYSTALS
OPTICAL PROPERTIES
RESOLUTION
SAPPHIRE
SEMICONDUCTOR MATERIALS
SPUTTERING
SUBSTRATES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
ALUMINIUM NITRIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH
DEPOSITION
EPITAXY
GALLIUM NITRIDES
GRAIN ORIENTATION
LAYERS
LIGHT EMITTING DIODES
MONOCRYSTALS
OPTICAL PROPERTIES
RESOLUTION
SAPPHIRE
SEMICONDUCTOR MATERIALS
SPUTTERING
SUBSTRATES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION