Single crystal wurtzite GaN on (111) GaAs with AlN buffer layers grown by reactive magnetron sputter deposition
- Lawrence Berkeley Laboratory, 1 Cyclotron Road, MS 2-300, Berkeley, California 94720 (United States)
- University of California, 183M Cory, Berkeley, California 94720 (United States)
We report the growth conditions necessary for highly oriented wurtzite GaN films on (111) GaAs, and single crystal GaN films on (111) GaAs using AlN buffer layers. The GaN films and AlN buffers are grown using rf reactive magnetron sputter deposition. Oriented basal plane wurtzite GaN is obtained on (111) GaAs at temperatures between 550-620 [degree]C. However, using a high temperature 200 A AlN buffer layer epitaxial GaN is produced. Crystal structure and quality is measured using x-ray diffraction (XRD), reflection electron diffraction (RED), and a scanning electron microscope (SEM). This is the first report of single crystal wurtzite GaN on (111) GaAs using AlN buffer layers by any growth technique. Simple AlN/GaN heterostructures grown by rf reactive sputter deposition on (111) GaAs are also demonstrated.
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 6077040
- Journal Information:
- Journal of Materials Research; (United States), Journal Name: Journal of Materials Research; (United States) Vol. 8:10; ISSN JMREEE; ISSN 0884-2914
- Country of Publication:
- United States
- Language:
- English
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Crystalline growth of wurtzite GaN on (111) GaAs
Related Subjects
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
ALUMINIUM COMPOUNDS
ALUMINIUM NITRIDES
ARSENIC COMPOUNDS
ARSENIDES
BUFFERS
COHERENT SCATTERING
CRYSTAL STRUCTURE
CRYSTALS
DIFFRACTION
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM NITRIDES
HETEROJUNCTIONS
JUNCTIONS
MICROSCOPY
MONOCRYSTALS
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
SCANNING ELECTRON MICROSCOPY
SCATTERING
SEMICONDUCTOR JUNCTIONS
SPUTTERING
SUBSTRATES
TEMPERATURE RANGE
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
X-RAY DIFFRACTION