Crystalline growth of wurtzite GaN on (111) GaAs
Conference
·
OSTI ID:10181825
- California Univ., Berkeley, CA (United States). Dept. of Electrical Engineering and Computer Sciences
- Lawrence Berkeley Lab., CA (United States)
Gallium Nitride films were grown on (111) gallium arsenide substrates using reactive rf magnetron sputtering. Despite a 20% lattice mismatch and different crystal structure, wurtzite. Heteroepitaxy was observed for growth temperatures between 550-600{degrees}C. X-ray diffraction patterns revealed (0002) GaN peak with a full-width-half-maximum (FWHM) as narrow as 0.17{degree}. Possible surface reconstructions to explain the epitaxial growth are presented.
- Research Organization:
- Lawrence Berkeley Lab., CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 10181825
- Report Number(s):
- LBL--32258; CONF-911202--85; ON: DE92041165; CNN: Contract 1-442427-21482
- Country of Publication:
- United States
- Language:
- English
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