Effect of buffer layer growth temperature on epitaxial GaN films deposited by magnetron sputtering

Journal Article · Tue Jun 05 04:00:00 EDT 2012 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4710176· OSTI ID:22004131

Mohanta, P; Singh, D; Kumar, R; Ganguli, T; Srinivasa, R S; Major, S S ^[1]

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1. Center For Research in Nano-Technology and Science (India)

Epitaxial GaN films were deposited by reactive sputtering of a GaAs target in 100 % nitrogen at 700 deg. C on ZnO buffer layers grown at different substrate temperatures over sapphire substrates. High resolution X-ray diffraction measurements and the corresponding analysis show that the growth temperature of buffer layers significantly affects the micro-structural parameters of GaN epilayer, such as lateral coherence length, tilt and twist, while the vertical coherence length remains unaffected. The optimum substrate temperature for buffer layer growth has been found to be 300 deg. C. High epitaxial quality GaN film grown on such a buffer layer exhibited micro strain of 1.8x10{sup -4} along with screw and edge type dislocation densities of 7.87x10{sup 9} and 1.16x10{sup 11}, respectively.

• OSTI ID: 22004131
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1447; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COHERENCE LENGTH
DEPOSITION
EDGE DISLOCATIONS
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM NITRIDES
MICROSTRUCTURE
SAPPHIRE
SCREW DISLOCATIONS
SEMICONDUCTOR MATERIALS
STRAINS
SUBSTRATES
TEMPERATURE DEPENDENCE
X-RAY DIFFRACTION
ZINC OXIDES