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Title: Issues and examples regarding growth of AlN, GaN and Al{sub x}Ga{sub 1{minus}x}N thin films via OMVPE and gas source MBE

Abstract

Organometallic vapor phase epitaxy (OMVPE) and molecular beam epitaxy (MBE) are the most common methods for the growth of thin films of AlN and GaN. Sapphire is the most common substrate; however, a host of materials have been used with varying degrees of success. Both growth techniques have been employed by the authors to grow AlN, GaN and Al{sub x}Ga{sub 1{minus}x}N thin films primarily on 6H-SiC(0001). The mismatch in atomic layer stacking sequences along the growth direction produces double positioning boundaries in AlN and the alloys at the SiC steps; the sequence problem appears to discourage the two-dimensional nucleation of GaN. Films of these materials grown by MBE at 650 C are textured; monocrystalline films are achieved between 850 C (pure GaN) and 1,050 C (pure AlN) by this technique and OMVPE. Donor and acceptor doping of GaN has been achieved via MBE without post growth annealing. Acceptor doping in CVD material requires annealing to displace the H from the Mg and eventually remove it from the material. High brightness light emitting diodes are commercially available; however, numerous concerns regarding metal and nitrogen sources, heteroepitaxial nucleation, the role of buffer layers, surface migration rates as a function of temperature, substantialmore » defect densities and their effect on film and device properties, ohmic and rectifying contacts, wet and dry etching and suitable gate and field insulators must and are being addressed. Selected issues surrounding the growth of these materials with particular examples drawn from the authors` research are presented herein.« less

Authors:
; ; ; ; ; ; ; ;  [1]
  1. North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering
Publication Date:
OSTI Identifier:
394925
Report Number(s):
CONF-951155-
ISBN 1-55899-298-7; TRN: IM9648%%2
Resource Type:
Book
Resource Relation:
Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Gallium nitride and related materials; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Dupuis, R.D. [ed.] [Univ. of Texas, Austin, TX (United States)]; Nakamura, S. [ed.] [Nichia Chemical Industries, Tokushima (Japan)]; Edmond, J.A. [ed.] [Cree Research, Inc., Durham, NC (United States)]; PB: 993 p.; Materials Research Society symposium proceedings, Volume 395
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; PHYSICAL VAPOR DEPOSITION; MICROSTRUCTURE; OPTICAL PROPERTIES; ELECTRICAL PROPERTIES; GALLIUM NITRIDES; SILICON CARBIDES; ORGANOMETALLIC COMPOUNDS; MOLECULAR BEAM EPITAXY; VAPOR PHASE EPITAXY; DOPED MATERIALS; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; PHOTOLUMINESCENCE; CRYSTAL DEFECTS; EXPERIMENTAL DATA

Citation Formats

Davis, R F, Weeks, Jr, T W, Bremser, M D, Tanaka, S, Kern, R S, Sitar, Z, Ailey, K S, Perry, W G, and Wang, C. Issues and examples regarding growth of AlN, GaN and Al{sub x}Ga{sub 1{minus}x}N thin films via OMVPE and gas source MBE. United States: N. p., 1996. Web.
Davis, R F, Weeks, Jr, T W, Bremser, M D, Tanaka, S, Kern, R S, Sitar, Z, Ailey, K S, Perry, W G, & Wang, C. Issues and examples regarding growth of AlN, GaN and Al{sub x}Ga{sub 1{minus}x}N thin films via OMVPE and gas source MBE. United States.
Davis, R F, Weeks, Jr, T W, Bremser, M D, Tanaka, S, Kern, R S, Sitar, Z, Ailey, K S, Perry, W G, and Wang, C. Fri . "Issues and examples regarding growth of AlN, GaN and Al{sub x}Ga{sub 1{minus}x}N thin films via OMVPE and gas source MBE". United States.
@article{osti_394925,
title = {Issues and examples regarding growth of AlN, GaN and Al{sub x}Ga{sub 1{minus}x}N thin films via OMVPE and gas source MBE},
author = {Davis, R F and Weeks, Jr, T W and Bremser, M D and Tanaka, S and Kern, R S and Sitar, Z and Ailey, K S and Perry, W G and Wang, C},
abstractNote = {Organometallic vapor phase epitaxy (OMVPE) and molecular beam epitaxy (MBE) are the most common methods for the growth of thin films of AlN and GaN. Sapphire is the most common substrate; however, a host of materials have been used with varying degrees of success. Both growth techniques have been employed by the authors to grow AlN, GaN and Al{sub x}Ga{sub 1{minus}x}N thin films primarily on 6H-SiC(0001). The mismatch in atomic layer stacking sequences along the growth direction produces double positioning boundaries in AlN and the alloys at the SiC steps; the sequence problem appears to discourage the two-dimensional nucleation of GaN. Films of these materials grown by MBE at 650 C are textured; monocrystalline films are achieved between 850 C (pure GaN) and 1,050 C (pure AlN) by this technique and OMVPE. Donor and acceptor doping of GaN has been achieved via MBE without post growth annealing. Acceptor doping in CVD material requires annealing to displace the H from the Mg and eventually remove it from the material. High brightness light emitting diodes are commercially available; however, numerous concerns regarding metal and nitrogen sources, heteroepitaxial nucleation, the role of buffer layers, surface migration rates as a function of temperature, substantial defect densities and their effect on film and device properties, ohmic and rectifying contacts, wet and dry etching and suitable gate and field insulators must and are being addressed. Selected issues surrounding the growth of these materials with particular examples drawn from the authors` research are presented herein.},
doi = {},
url = {https://www.osti.gov/biblio/394925}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {11}
}

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