Valley dependent anisotropic spin splitting in silicon quantum dots
Abstract
Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent experiments have utilized gradient magnetic fields from integrated micro-magnets to produce an extrinsic coupling between spin and charge, thereby electrically driving electron spin resonance (ESR). However, spins in silicon QDs experience a complex interplay between spin, charge, and valley degrees of freedom, influenced by the atomic scale details of the confining interface. We report experimental observation of a valley dependent anisotropic spin splitting in a Si QD with an integrated micro-magnet and an external magnetic field. We show by atomistic calculations that the spin-orbit interaction (SOI), which is often ignored in bulk silicon, plays a major role in the measured anisotropy. Moreover, inhomogeneities such as interface steps strongly affect the spin splittings and their valley dependence. This atomic-scale understanding of the intrinsic and extrinsic factors controlling the valley dependent spin properties is a key requirement for successful manipulation of quantum information in Si QDs.
- Authors:
-
[1];
[4];
[1]
- Purdue Univ., West Lafayette, IN (United States). Electrical and Computer Engineering and Network for Computational Nanotechnology
- Delft Univ. of Technology (Netherlands). QuTech and Kavli Inst. of Nanoscience
- Delft Univ. of Technology (Netherlands). QuTech and Kavli Inst. of Nanoscience; AGH - Univ. of Science and Technology, Krakow (Poland). Academic Centre for Materials and Nanotechnology
- Univ. of Wisconsin, Madison, WI (United States)
- Publication Date:
- Research Org.:
- Univ. of Wisconsin, Madison, WI (United States). Materials Research Science and Engineering Center (MRSEC)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); US Army Research Office (ARO); National Science Foundation (NSF); European Research Council (ERC)
- Contributing Org.:
- Purdue Univ., West Lafayette, IN (United States). Network for Computational Nanotechnology (nanoHUB.org)
- OSTI Identifier:
- 1460097
- Grant/Contract Number:
- FG02-03ER46028; W911NF-12-0607; DMR-1121288; EEC-0228390
- Resource Type:
- Accepted Manuscript
- Journal Name:
- npj Quantum Information
- Additional Journal Information:
- Journal Volume: 4; Journal Issue: 1; Journal ID: ISSN 2056-6387
- Publisher:
- Nature Partner Journals
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; 97 MATHEMATICS AND COMPUTING
Citation Formats
Ferdous, Rifat, Kawakami, Erika, Scarlino, Pasquale, Nowak, Michal P., Ward, D. R., Savage, D. E., Lagally, M. G., Coppersmith, S. N., Friesen, Mark, Eriksson, Mark A., Vandersypen, Lieven M. K., and Rahman, Rajib. Valley dependent anisotropic spin splitting in silicon quantum dots. United States: N. p., 2018.
Web. doi:10.1038/s41534-018-0075-1.
Ferdous, Rifat, Kawakami, Erika, Scarlino, Pasquale, Nowak, Michal P., Ward, D. R., Savage, D. E., Lagally, M. G., Coppersmith, S. N., Friesen, Mark, Eriksson, Mark A., Vandersypen, Lieven M. K., & Rahman, Rajib. Valley dependent anisotropic spin splitting in silicon quantum dots. United States. https://doi.org/10.1038/s41534-018-0075-1
Ferdous, Rifat, Kawakami, Erika, Scarlino, Pasquale, Nowak, Michal P., Ward, D. R., Savage, D. E., Lagally, M. G., Coppersmith, S. N., Friesen, Mark, Eriksson, Mark A., Vandersypen, Lieven M. K., and Rahman, Rajib. Tue .
"Valley dependent anisotropic spin splitting in silicon quantum dots". United States. https://doi.org/10.1038/s41534-018-0075-1. https://www.osti.gov/servlets/purl/1460097.
@article{osti_1460097,
title = {Valley dependent anisotropic spin splitting in silicon quantum dots},
author = {Ferdous, Rifat and Kawakami, Erika and Scarlino, Pasquale and Nowak, Michal P. and Ward, D. R. and Savage, D. E. and Lagally, M. G. and Coppersmith, S. N. and Friesen, Mark and Eriksson, Mark A. and Vandersypen, Lieven M. K. and Rahman, Rajib},
abstractNote = {Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent experiments have utilized gradient magnetic fields from integrated micro-magnets to produce an extrinsic coupling between spin and charge, thereby electrically driving electron spin resonance (ESR). However, spins in silicon QDs experience a complex interplay between spin, charge, and valley degrees of freedom, influenced by the atomic scale details of the confining interface. We report experimental observation of a valley dependent anisotropic spin splitting in a Si QD with an integrated micro-magnet and an external magnetic field. We show by atomistic calculations that the spin-orbit interaction (SOI), which is often ignored in bulk silicon, plays a major role in the measured anisotropy. Moreover, inhomogeneities such as interface steps strongly affect the spin splittings and their valley dependence. This atomic-scale understanding of the intrinsic and extrinsic factors controlling the valley dependent spin properties is a key requirement for successful manipulation of quantum information in Si QDs.},
doi = {10.1038/s41534-018-0075-1},
journal = {npj Quantum Information},
number = 1,
volume = 4,
place = {United States},
year = {Tue Jun 05 00:00:00 EDT 2018},
month = {Tue Jun 05 00:00:00 EDT 2018}
}
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