Gate fidelity and coherence of an electron spin in an Si/SiGe quantum dot with micromagnet
- QuTech, 2628 CJ Delft, The Netherlands,, Kavli Institute of Nanoscience, Delft University of Technology, 2628 CJ Delft, The Netherlands,
- University of Wisconsin-Madison, Madison, WI 53706,
- Ames Laboratory, US Department of Energy, Iowa State University, Ames, IA 50011,
- QuTech, 2628 CJ Delft, The Netherlands,, Kavli Institute of Nanoscience, Delft University of Technology, 2628 CJ Delft, The Netherlands,, Components Research, Intel Corporation, Hillsboro, OR 97124
Significance A quantum computer is able to solve certain problems that cannot be solved by a classical computer within a reasonable time. The building block of a quantum computer is called a quantum bit (qubit), the counterpart of the conventional binary digit (bit). A qubit unavoidably interacts with its environment, leading to errors in the qubit state. This article reports on the qubit performance of an electron spin in a silicon/silicon-germanium (Si/SiGe) quantum dot, and examines the dominant error mechanisms. We demonstrate that this qubit can be electrically controlled with sufficient accuracy so that remaining errors could, in principle, be corrected using known protocols, even without isotopically purified silicon. This qubit also offers a quantum memory that lasts for almost 0.5 ms.
- Research Organization:
- Ames Laboratory (AMES), Ames, IA (United States); Univ. of Wisconsin, Madison, WI (United States)
- Sponsoring Organization:
- USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Grant/Contract Number:
- AC02-07CH11358; FG02-03ER46028
- OSTI ID:
- 1328496
- Report Number(s):
- IS-J--9131
- Journal Information:
- Proceedings of the National Academy of Sciences of the United States of America, Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Issue: 42 Vol. 113; ISSN 0027-8424
- Publisher:
- Proceedings of the National Academy of SciencesCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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