Stable organic thin-film transistors
Abstract
Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability generally remains inferior and a point of concern for their commercial deployment. We report on an exhaustive characterization of OTFTs with an ultrathin bilayer gate dielectric comprising the amorphous fluoropolymer CYTOP and an Al2O3:HfO2 nanolaminate. Threshold voltage shifts measured at room temperatureovertimeperiods upto5.9×105 s do not vary monotonically and remain below 0.2 V in microcrystalline OTFTs (mc-OTFTs) with field-effect carrier mobility values up to 1.6 cm2 V-1 s-1. Modeling of these shifts as a function of time with a double stretched-exponential (DSE) function suggests that two compensating aging mechanisms are at play and responsible for this high stability. The measured threshold voltage shifts at temperatures up to 75°C represent at least a one-order-of-magnitude improvement in the operational stability over previous reports, bringing OTFT technologies to a performance level comparable to that reported in the scientific literature for other commercial TFTs technologies.
- Publication Date:
- Research Org.:
- North Carolina State University, Raleigh, NC (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1438013
- Grant/Contract Number:
- NA0002576
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Science Advances
- Additional Journal Information:
- Journal Volume: 4; Journal Issue: 1; Journal ID: ISSN 2375-2548
- Publisher:
- AAAS
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Jia, Xiaojia, Fuentes-Hernandez, Canek, Wang, Cheng-Yin, Park, Youngrak, and Kippelen, Bernard. Stable organic thin-film transistors. United States: N. p., 2018.
Web. doi:10.1126/sciadv.aao1705.
Jia, Xiaojia, Fuentes-Hernandez, Canek, Wang, Cheng-Yin, Park, Youngrak, & Kippelen, Bernard. Stable organic thin-film transistors. United States. https://doi.org/10.1126/sciadv.aao1705
Jia, Xiaojia, Fuentes-Hernandez, Canek, Wang, Cheng-Yin, Park, Youngrak, and Kippelen, Bernard. Fri .
"Stable organic thin-film transistors". United States. https://doi.org/10.1126/sciadv.aao1705. https://www.osti.gov/servlets/purl/1438013.
@article{osti_1438013,
title = {Stable organic thin-film transistors},
author = {Jia, Xiaojia and Fuentes-Hernandez, Canek and Wang, Cheng-Yin and Park, Youngrak and Kippelen, Bernard},
abstractNote = {Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability generally remains inferior and a point of concern for their commercial deployment. We report on an exhaustive characterization of OTFTs with an ultrathin bilayer gate dielectric comprising the amorphous fluoropolymer CYTOP and an Al2O3:HfO2 nanolaminate. Threshold voltage shifts measured at room temperatureovertimeperiods upto5.9×105 s do not vary monotonically and remain below 0.2 V in microcrystalline OTFTs (mc-OTFTs) with field-effect carrier mobility values up to 1.6 cm2 V-1 s-1. Modeling of these shifts as a function of time with a double stretched-exponential (DSE) function suggests that two compensating aging mechanisms are at play and responsible for this high stability. The measured threshold voltage shifts at temperatures up to 75°C represent at least a one-order-of-magnitude improvement in the operational stability over previous reports, bringing OTFT technologies to a performance level comparable to that reported in the scientific literature for other commercial TFTs technologies.},
doi = {10.1126/sciadv.aao1705},
journal = {Science Advances},
number = 1,
volume = 4,
place = {United States},
year = {Fri Jan 12 00:00:00 EST 2018},
month = {Fri Jan 12 00:00:00 EST 2018}
}
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Figures / Tables:
Fig. 1. : μGeneral electrical properties and environmental stability. (A) The structure of top-gate bottom-contact μc-OTFTs with gate dielectric layers of CYTOP/NL. The semiconductor layers of A_33 and C_33 are TIPS-pentacene/PTAA blend and diF-TES-ADT/PTAA blend, respectively. (B) Transfer characteristics of as-fabricated μc-OTFTs of A_33 (left) and C_33 (right). (C) Electricalmore »
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