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Title: Low-voltage and hysteresis-free organic thin-film transistors employing solution-processed hybrid bilayer gate dielectrics

Abstract

This study presents a promising approach to realize low-voltage (<3 V) organic thin-film transistors (OTFTs) exhibiting improved electrical and optical stability. Such device performance results from the use of solution-processed hybrid bilayer gate dielectrics consisting of zirconium dioxide (high-k dielectric) and amorphous fluoropolymer, CYTOP{sup ®} (low-k dielectric). Employing a very thin amorphous fluoropolymer film reduces interfacial defect-states by repelling water molecules and other aqueous chemicals from an organic semiconductor active layer due to the hydrophobic surface-property. The chemically clean interface, stemming from decrease in density of trap states improves all the key device properties such as field-effect mobility, threshold voltage, and sub-threshold swing. Furthermore, degradation by electrical bias-stress and photo-induced hysteresis were suppressed in OTFTs employing hybrid bilayer gate dielectrics.

Authors:
 [1]
  1. Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22311223
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; CRYSTAL DEFECTS; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; HYSTERESIS; INTERFACES; LAYERS; MOLECULES; ORGANIC SEMICONDUCTORS; STABILITY; SURFACE PROPERTIES; THIN FILMS; TRANSISTORS; TRAPS; WATER; ZIRCONIUM OXIDES

Citation Formats

Ha, Tae-Jun. Low-voltage and hysteresis-free organic thin-film transistors employing solution-processed hybrid bilayer gate dielectrics. United States: N. p., 2014. Web. doi:10.1063/1.4892005.
Ha, Tae-Jun. Low-voltage and hysteresis-free organic thin-film transistors employing solution-processed hybrid bilayer gate dielectrics. United States. doi:10.1063/1.4892005.
Ha, Tae-Jun. Mon . "Low-voltage and hysteresis-free organic thin-film transistors employing solution-processed hybrid bilayer gate dielectrics". United States. doi:10.1063/1.4892005.
@article{osti_22311223,
title = {Low-voltage and hysteresis-free organic thin-film transistors employing solution-processed hybrid bilayer gate dielectrics},
author = {Ha, Tae-Jun},
abstractNote = {This study presents a promising approach to realize low-voltage (<3 V) organic thin-film transistors (OTFTs) exhibiting improved electrical and optical stability. Such device performance results from the use of solution-processed hybrid bilayer gate dielectrics consisting of zirconium dioxide (high-k dielectric) and amorphous fluoropolymer, CYTOP{sup ®} (low-k dielectric). Employing a very thin amorphous fluoropolymer film reduces interfacial defect-states by repelling water molecules and other aqueous chemicals from an organic semiconductor active layer due to the hydrophobic surface-property. The chemically clean interface, stemming from decrease in density of trap states improves all the key device properties such as field-effect mobility, threshold voltage, and sub-threshold swing. Furthermore, degradation by electrical bias-stress and photo-induced hysteresis were suppressed in OTFTs employing hybrid bilayer gate dielectrics.},
doi = {10.1063/1.4892005},
journal = {Applied Physics Letters},
number = 4,
volume = 105,
place = {United States},
year = {Mon Jul 28 00:00:00 EDT 2014},
month = {Mon Jul 28 00:00:00 EDT 2014}
}