Organic thin-film transistors with a bottom bilayer gate dielectric having a low operating voltage and high operational stability

Kim, Gunhee; Fuentes-Hernandez, Canek; Jia, Xiaojia; Kippelen, Bernard

doi:10.1021/acsaelm.0c00487

Organic thin-film transistors with a bottom bilayer gate dielectric having a low operating voltage and high operational stability

Journal Article · Wed Aug 12 00:00:00 EDT 2020 · ACS Applied Electronic Materials

DOI:https://doi.org/10.1021/acsaelm.0c00487· OSTI ID:1644040

Kim, Gunhee ^[1]; Fuentes-Hernandez, Canek ^[2]; Jia, Xiaojia ^[2]; Kippelen, Bernard ^[2]

Georgia Inst. of Technology, Atlanta, GA (United States); Georgia Institute of Technology
Georgia Inst. of Technology, Atlanta, GA (United States)

This study reports on p-channel bottom-gate organic thin-film transistors (OTFT) that achieve low-voltage operation with a thin bilayer gate dielectric of CYTOP/HfO₂ that also leads to high operational stability. A bottom-gate geometry allows the thickness of the gate dielectric to be reduced to 17 nm, thereby increasing the gate dielectric capacitance density to a value of up to 258 nF/cm². All OTFTs yielded threshold voltages (V_TH) lower than -1 V, thereby providing minimum operating voltage (gate to source voltage ~ V_TH) of -1 V with field-effect mobility values in the range from 0.3 to 0.8 cm²/Vs and subthreshold swing values below 100 mV/dec. Operational stability during DC bias stress was found similar to that measured in devices with a top-gate geometry, with about 1% of drain current change after 6 h. Here, using a double-stretched exponential function, the operational stability characteristics were modeled. It was found that by increasing the metal oxide layer thickness, the threshold voltage can shift toward positive values under DC stress tests. For CYTOP layer thicknesses above 15 nm, a thicker CYTOP layer was found to shift the threshold voltage in the opposite direction toward negative values. Furthermore, these p-channel bottom-gate organic transistor with a bilayer gate dielectric of CYTOP/HfO₂ combine high mobility, high operational stability, and lower voltage operation of -1 V compared to top-gate OTFTs.

View Accepted Manuscript (DOE)

Research Organization:: Georgia Inst. of Technology, Atlanta, GA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)

Grant/Contract Number:: NA0003921

OSTI ID:: 1644040

Journal Information:: ACS Applied Electronic Materials, Journal Name: ACS Applied Electronic Materials Journal Issue: 9 Vol. 2; ISSN 2637-6113

Publisher:: ACS PublicationsCopyright Statement

Country of Publication:: United States

Language:: English

References (34)

Dynamics of Threshold Voltage Shifts in Organic and Amorphous Silicon Field-Effect Transistors Mathijssen, S. G. J.; Cölle, M.; Gomes, H. Advanced Materials, Vol. 19, Issue 19 https://doi.org/10.1002/adma.200602798	journal	October 2007
A Nitrogen Dioxide Sensor Based on an Organic Transistor Constructed from Amorphous Semiconducting Polymers Das, A.; Dost, R.; Richardson, T. Advanced Materials, Vol. 19, Issue 22 https://doi.org/10.1002/adma.200701504	journal	November 2007
High-Performance Polymer-Small Molecule Blend Organic Transistors Hamilton, Richard; Smith, Jeremy; Ogier, Simon Advanced Materials, Vol. 21, Issue 10-11, p. 1166-1171 https://doi.org/10.1002/adma.200801725	journal	March 2009
Top-Gate Organic Field-Effect Transistors with High Environmental and Operational Stability Hwang, Do Kyung; Fuentes-Hernandez, Canek; Kim, Jungbae Advanced Materials, Vol. 23, Issue 10 https://doi.org/10.1002/adma.201004278	journal	January 2011
A Low-Operating-Power and Flexible Active-Matrix Organic-Transistor Temperature-Sensor Array Ren, Xiaochen; Pei, Ke; Peng, Boyu Advanced Materials, Vol. 28, Issue 24 https://doi.org/10.1002/adma.201600040	journal	April 2016
Printed Organic Inverter Circuits with Ultralow Operating Voltages Shiwaku, Rei; Matsui, Hiroyuki; Hayasaka, Kazuma Advanced Electronic Materials, Vol. 3, Issue 5 https://doi.org/10.1002/aelm.201600557	journal	March 2017
Solution Shearing of a High‐Capacitance Polymer Dielectric for Low‐Voltage Organic Transistors Haase, Katherina; Zessin, Jakob; Zoumboulis, Konstantinos Advanced Electronic Materials, Vol. 5, Issue 6 https://doi.org/10.1002/aelm.201900067	journal	April 2019
MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages Chen, Kai; Clement Wann, H.; Dunster, Jon Solid-State Electronics, Vol. 39, Issue 10 https://doi.org/10.1016/0038-1101(96)00059-7	journal	October 1996
Organic RFID transponder chip with data rate compatible with electronic product coding Myny, K.; Steudel, S.; Smout, S. Organic Electronics, Vol. 11, Issue 7 https://doi.org/10.1016/j.orgel.2010.04.013	journal	July 2010
Bias-stress stability of low-voltage p-channel and n-channel organic thin-film transistors on flexible plastic substrates Bisoyi, Sibani; Zschieschang, Ute; Kang, Myeong Jin Organic Electronics, Vol. 15, Issue 11 https://doi.org/10.1016/j.orgel.2014.08.057	journal	November 2014
Flexible electrophoretic display driven by solution-processed organic TFT with highly stable bending feature Park, Chang Bum; Kim, Kyung Min; Lee, Jung Eun Organic Electronics, Vol. 15, Issue 12 https://doi.org/10.1016/j.orgel.2014.09.039	journal	December 2014
Low operating voltage organic transistors and circuits with anodic titanium oxide and phosphonic acid self-assembled monolayer dielectrics Jinno, Hiroaki; Yokota, Tomoyuki; Matsuhisa, Naoji Organic Electronics, Vol. 40 https://doi.org/10.1016/j.orgel.2016.10.034	journal	January 2017
Below-one-volt organic thin-film transistors with large on/off current ratios Zschieschang, Ute; Bader, Vera Patricia; Klauk, Hagen Organic Electronics, Vol. 49 https://doi.org/10.1016/j.orgel.2017.06.045	journal	October 2017
Towards understanding the origin of the hysteresis effects and threshold voltage shift in organic field-effect transistors based on the electrochemically grown AlOx dielectric Leshanskaya, Lidiya I.; Dremova, Nadezhda N.; Luchkin, Sergey Yu. Thin Solid Films, Vol. 649 https://doi.org/10.1016/j.tsf.2018.01.014	journal	March 2018
Calorimetric Measurements of Surface Energy of Amorphous HfO ₂ Nanoparticles Produced by Gas Phase Condensation Sharma, Geetu; Ushakov, Sergey V.; Li, Hui The Journal of Physical Chemistry C, Vol. 121, Issue 19 https://doi.org/10.1021/acs.jpcc.7b01262	journal	May 2017
Organic Field-Effect Transistors with a Bilayer Gate Dielectric Comprising an Oxide Nanolaminate Grown by Atomic Layer Deposition Wang, Cheng-Yin; Fuentes-Hernandez, Canek; Yun, Minseong ACS Applied Materials & Interfaces, Vol. 8, Issue 44 https://doi.org/10.1021/acsami.6b10603	journal	October 2016
Low-Voltage Organic Single-Crystal Field-Effect Transistor with Steep Subthreshold Slope Yang, Fangxu; Sun, Lingjie; Han, Jiangli ACS Applied Materials & Interfaces, Vol. 10, Issue 31 https://doi.org/10.1021/acsami.7b16658	journal	March 2018
Transparent and Colorless Polyimides Containing Multiple Trifluoromethyl Groups as Gate Insulators for Flexible Organic Transistors with Superior Electrical Stability Min, Honggi; Kang, Boseok; Shin, Yo Seob ACS Applied Materials & Interfaces, Vol. 12, Issue 16 https://doi.org/10.1021/acsami.9b23318	journal	April 2020
Systematic Reliability Study of Top-Gate p- and n-Channel Organic Field-Effect Transistors Hwang, Do Kyung; Fuentes-Hernandez, Canek; Fenoll, Mathieu ACS Applied Materials & Interfaces, Vol. 6, Issue 5 https://doi.org/10.1021/am405424k	journal	February 2014
Ultralow-power organic complementary circuits Klauk, Hagen; Zschieschang, Ute; Pflaum, Jens Nature, Vol. 445, Issue 7129 https://doi.org/10.1038/nature05533	journal	February 2007
Synthesis of ultrathin polymer insulating layers by initiated chemical vapour deposition for low-power soft electronics Moon, Hanul; Seong, Hyejeong; Shin, Woo Cheol Nature Materials, Vol. 14, Issue 6 https://doi.org/10.1038/nmat4237	journal	March 2015
High operational and environmental stability of high-mobility conjugated polymer field-effect transistors through the use of molecular additives Nikolka, Mark; Nasrallah, Iyad; Rose, Bradley Nature Materials, Vol. 16, Issue 3 https://doi.org/10.1038/nmat4785	journal	December 2016
High performance organic transistor active-matrix driver developed on paper substrate Peng, Boyu; Ren, Xiaochen; Wang, Zongrong Scientific Reports, Vol. 4, Issue 1 https://doi.org/10.1038/srep06430	journal	September 2014
Solvent and polymer matrix effects on TIPS-pentacene/polymer blend organic field-effect transistors Hwang, Do Kyung; Fuentes-Hernandez, Canek; Berrigan, John D. Journal of Materials Chemistry, Vol. 22, Issue 12 https://doi.org/10.1039/c2jm16487f	journal	January 2012
Organic-transistor-based flexible pressure sensors using ink-jet-printed electrodes and gate dielectric layers Noguchi, Yoshiaki; Sekitani, Tsuyoshi; Someya, Takao Applied Physics Letters, Vol. 89, Issue 25 https://doi.org/10.1063/1.2416001	journal	December 2006
Organic small molecule field-effect transistors with Cytop™ gate dielectric: Eliminating gate bias stress effects Kalb, W. L.; Mathis, T.; Haas, S. Applied Physics Letters, Vol. 90, Issue 9 https://doi.org/10.1063/1.2709894	journal	February 2007
A 13.56-MHz RFID System Based on Organic Transponders Cantatore, Eugenio; Geuns, Thomas C. T.; Gelinck, Gerwin H. IEEE Journal of Solid-State Circuits, Vol. 42, Issue 1, p. 84-92 https://doi.org/10.1109/JSSC.2006.886556	journal	January 2007
Low-Voltage pH Sensor Tag Based on All Solution Processed Organic Field-Effect Transistor Tang, Wei; Jiang, Chen; Li, Qiaofeng IEEE Electron Device Letters, Vol. 37, Issue 8 https://doi.org/10.1109/LED.2016.2580565	journal	August 2016
Dynamic $R_{\mathrm {ON}}$ of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination Tang, Gaofei; Wei, Jin; Zhang, Zhaofu IEEE Electron Device Letters, Vol. 38, Issue 7 https://doi.org/10.1109/LED.2017.2707529	journal	July 2017
Fully Solution Processed Bottom-Gate Organic Field-Effect Transistor With Steep Subthreshold Swing Approaching the Theoretical Limit Zhao, Jiaqing; Tang, Wei; Li, Qiaofeng IEEE Electron Device Letters, Vol. 38, Issue 10 https://doi.org/10.1109/LED.2017.2742952	journal	October 2017
Printed organic transistors for ultra-low-cost RFID applications Subramanian, V.; Chang, P. C.; Lee, J. B. IEEE Transactions on Components and Packaging Technologies, Vol. 28, Issue 4 https://doi.org/10.1109/TCAPT.2005.859672	journal	December 2005
Stable organic thin-film transistors Jia, Xiaojia; Fuentes-Hernandez, Canek; Wang, Cheng-Yin Science Advances, Vol. 4, Issue 1 https://doi.org/10.1126/sciadv.aao1705	journal	January 2018
Low-Voltage, Low-Power, Organic Light-Emitting Transistors for Active Matrix Displays McCarthy, M. A.; Liu, B.; Donoghue, E. P. Science, Vol. 332, Issue 6029 https://doi.org/10.1126/science.1203052	journal	April 2011
Printed subthreshold organic transistors operating at high gain and ultralow power Jiang, Chen; Choi, Hyung Woo; Cheng, Xiang Science, Vol. 363, Issue 6428 https://doi.org/10.1126/science.aav7057	journal	February 2019

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36 MATERIALS SCIENCE
Organic transistors
bilayer gate dielectric
bottom-gate
low voltage operation
operational stability
top-contact

Organic thin-film transistors with a bottom bilayer gate dielectric having a low operating voltage and high operational stability

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