Solution-Processed n-Type Graphene Doping for Cathode in Inverted Polymer Light-Emitting Diodes
Abstract
n-Type doping with (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl) dimethylamine (N-DMBI) reduces a work function (WF) of graphene by ~0.45 eV without significant reduction of optical transmittance. Solution process of N-DMBI on graphene provides effective n-type doping effect and air-stability at the same time. Although neutral N-DMBI act as an electron receptor leaving the graphene p-doped, radical N-DMBI acts as an electron donator leaving the graphene n-doped, which is demonstrated by density functional theory. We also verify the suitability of N-DMBI-doped n-type graphene for use as a cathode in inverted polymer light-emitting diodes (PLEDs) by using various analytical methods. Inverted PLEDs using a graphene cathode doped with N-DMBI radical showed dramatically improved device efficiency (~13.8 cd/A) than did inverted PLEDs with pristine graphene (~2.74 cd/A). Finally, N-DMBI-doped graphene can provide a practical way to produce graphene cathodes with low WF in various organic optoelectronics.
- Authors:
-
- Pohang Univ. of Science and Technology (POSTECH) (Korea, Republic of). Dept. of Materials Science and Engineering
- Seoul National Univ. (Korea, Republic of). Dept. of Materials Science and Engineering; Univ. of California, Los Angeles, CA (United States). Dept. of Materials Science and Engineering; Univ. of California, Los Angeles, CA (United States). California NanoSystems Inst.
- Seoul National Univ. (Korea, Republic of). Dept. of Materials Science and Engineering; Seoul National Univ. (Korea, Republic of). Research Inst. of Advanced Materials; Seoul National Univ. (Korea, Republic of). BK21 PLUS SNU Materials Division for Educating Creative Global Leaders
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Seoul National Univ. (Korea, Republic of). Dept. of Materials Science and Engineering
- Seoul National Univ. (Korea, Republic of). Program in Nano Science and Technology, Graduate School of Convergence Science and Technology
- Seoul National Univ. (Korea, Republic of). Dept. of Materials Science and Engineering; Seoul National Univ. (Korea, Republic of). Research Inst. of Advanced Materials
- Seoul National Univ. (Korea, Republic of). Program in Nano Science and Technology, Graduate School of Convergence Science and Technology; Seoul National Univ. (Korea, Republic of). Dept. of Chemistry
- Publication Date:
- Research Org.:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1418760
- Report Number(s):
- LA-UR-16-28960
Journal ID: ISSN 1944-8244
- Grant/Contract Number:
- AC52-06NA25396
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Applied Materials and Interfaces
- Additional Journal Information:
- Journal Volume: 10; Journal Issue: 5; Journal ID: ISSN 1944-8244
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Material Science
Citation Formats
Kwon, Sung-Joo, Han, Tae-Hee, Kim, Young-Hoon, Ahmed, Towfiq, Seo, Hong-Kyu, Kim, Hobeom, Kim, Dong Jin, Xu, Wentao, Hong, Byung Hee, Zhu, Jian-Xin, and Lee, Tae-Woo. Solution-Processed n-Type Graphene Doping for Cathode in Inverted Polymer Light-Emitting Diodes. United States: N. p., 2018.
Web. doi:10.1021/acsami.7b15307.
Kwon, Sung-Joo, Han, Tae-Hee, Kim, Young-Hoon, Ahmed, Towfiq, Seo, Hong-Kyu, Kim, Hobeom, Kim, Dong Jin, Xu, Wentao, Hong, Byung Hee, Zhu, Jian-Xin, & Lee, Tae-Woo. Solution-Processed n-Type Graphene Doping for Cathode in Inverted Polymer Light-Emitting Diodes. United States. https://doi.org/10.1021/acsami.7b15307
Kwon, Sung-Joo, Han, Tae-Hee, Kim, Young-Hoon, Ahmed, Towfiq, Seo, Hong-Kyu, Kim, Hobeom, Kim, Dong Jin, Xu, Wentao, Hong, Byung Hee, Zhu, Jian-Xin, and Lee, Tae-Woo. Thu .
"Solution-Processed n-Type Graphene Doping for Cathode in Inverted Polymer Light-Emitting Diodes". United States. https://doi.org/10.1021/acsami.7b15307. https://www.osti.gov/servlets/purl/1418760.
@article{osti_1418760,
title = {Solution-Processed n-Type Graphene Doping for Cathode in Inverted Polymer Light-Emitting Diodes},
author = {Kwon, Sung-Joo and Han, Tae-Hee and Kim, Young-Hoon and Ahmed, Towfiq and Seo, Hong-Kyu and Kim, Hobeom and Kim, Dong Jin and Xu, Wentao and Hong, Byung Hee and Zhu, Jian-Xin and Lee, Tae-Woo},
abstractNote = {n-Type doping with (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl) dimethylamine (N-DMBI) reduces a work function (WF) of graphene by ~0.45 eV without significant reduction of optical transmittance. Solution process of N-DMBI on graphene provides effective n-type doping effect and air-stability at the same time. Although neutral N-DMBI act as an electron receptor leaving the graphene p-doped, radical N-DMBI acts as an electron donator leaving the graphene n-doped, which is demonstrated by density functional theory. We also verify the suitability of N-DMBI-doped n-type graphene for use as a cathode in inverted polymer light-emitting diodes (PLEDs) by using various analytical methods. Inverted PLEDs using a graphene cathode doped with N-DMBI radical showed dramatically improved device efficiency (~13.8 cd/A) than did inverted PLEDs with pristine graphene (~2.74 cd/A). Finally, N-DMBI-doped graphene can provide a practical way to produce graphene cathodes with low WF in various organic optoelectronics.},
doi = {10.1021/acsami.7b15307},
journal = {ACS Applied Materials and Interfaces},
number = 5,
volume = 10,
place = {United States},
year = {Thu Jan 11 00:00:00 EST 2018},
month = {Thu Jan 11 00:00:00 EST 2018}
}
Web of Science
Figures / Tables:
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