DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Solution-Processed n-Type Graphene Doping for Cathode in Inverted Polymer Light-Emitting Diodes

Abstract

n-Type doping with (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl) dimethylamine (N-DMBI) reduces a work function (WF) of graphene by ~0.45 eV without significant reduction of optical transmittance. Solution process of N-DMBI on graphene provides effective n-type doping effect and air-stability at the same time. Although neutral N-DMBI act as an electron receptor leaving the graphene p-doped, radical N-DMBI acts as an electron donator leaving the graphene n-doped, which is demonstrated by density functional theory. We also verify the suitability of N-DMBI-doped n-type graphene for use as a cathode in inverted polymer light-emitting diodes (PLEDs) by using various analytical methods. Inverted PLEDs using a graphene cathode doped with N-DMBI radical showed dramatically improved device efficiency (~13.8 cd/A) than did inverted PLEDs with pristine graphene (~2.74 cd/A). Finally, N-DMBI-doped graphene can provide a practical way to produce graphene cathodes with low WF in various organic optoelectronics.

Authors:
 [1];  [2];  [3];  [4];  [1];  [5];  [6];  [7]; ORCiD logo [8]; ORCiD logo [4]; ORCiD logo [7]
  1. Pohang Univ. of Science and Technology (POSTECH) (Korea, Republic of). Dept. of Materials Science and Engineering
  2. Seoul National Univ. (Korea, Republic of). Dept. of Materials Science and Engineering; Univ. of California, Los Angeles, CA (United States). Dept. of Materials Science and Engineering; Univ. of California, Los Angeles, CA (United States). California NanoSystems Inst.
  3. Seoul National Univ. (Korea, Republic of). Dept. of Materials Science and Engineering; Seoul National Univ. (Korea, Republic of). Research Inst. of Advanced Materials; Seoul National Univ. (Korea, Republic of). BK21 PLUS SNU Materials Division for Educating Creative Global Leaders
  4. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  5. Seoul National Univ. (Korea, Republic of). Dept. of Materials Science and Engineering
  6. Seoul National Univ. (Korea, Republic of). Program in Nano Science and Technology, Graduate School of Convergence Science and Technology
  7. Seoul National Univ. (Korea, Republic of). Dept. of Materials Science and Engineering; Seoul National Univ. (Korea, Republic of). Research Inst. of Advanced Materials
  8. Seoul National Univ. (Korea, Republic of). Program in Nano Science and Technology, Graduate School of Convergence Science and Technology; Seoul National Univ. (Korea, Republic of). Dept. of Chemistry
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1418760
Report Number(s):
LA-UR-16-28960
Journal ID: ISSN 1944-8244
Grant/Contract Number:  
AC52-06NA25396
Resource Type:
Accepted Manuscript
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Volume: 10; Journal Issue: 5; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Material Science

Citation Formats

Kwon, Sung-Joo, Han, Tae-Hee, Kim, Young-Hoon, Ahmed, Towfiq, Seo, Hong-Kyu, Kim, Hobeom, Kim, Dong Jin, Xu, Wentao, Hong, Byung Hee, Zhu, Jian-Xin, and Lee, Tae-Woo. Solution-Processed n-Type Graphene Doping for Cathode in Inverted Polymer Light-Emitting Diodes. United States: N. p., 2018. Web. doi:10.1021/acsami.7b15307.
Kwon, Sung-Joo, Han, Tae-Hee, Kim, Young-Hoon, Ahmed, Towfiq, Seo, Hong-Kyu, Kim, Hobeom, Kim, Dong Jin, Xu, Wentao, Hong, Byung Hee, Zhu, Jian-Xin, & Lee, Tae-Woo. Solution-Processed n-Type Graphene Doping for Cathode in Inverted Polymer Light-Emitting Diodes. United States. https://doi.org/10.1021/acsami.7b15307
Kwon, Sung-Joo, Han, Tae-Hee, Kim, Young-Hoon, Ahmed, Towfiq, Seo, Hong-Kyu, Kim, Hobeom, Kim, Dong Jin, Xu, Wentao, Hong, Byung Hee, Zhu, Jian-Xin, and Lee, Tae-Woo. Thu . "Solution-Processed n-Type Graphene Doping for Cathode in Inverted Polymer Light-Emitting Diodes". United States. https://doi.org/10.1021/acsami.7b15307. https://www.osti.gov/servlets/purl/1418760.
@article{osti_1418760,
title = {Solution-Processed n-Type Graphene Doping for Cathode in Inverted Polymer Light-Emitting Diodes},
author = {Kwon, Sung-Joo and Han, Tae-Hee and Kim, Young-Hoon and Ahmed, Towfiq and Seo, Hong-Kyu and Kim, Hobeom and Kim, Dong Jin and Xu, Wentao and Hong, Byung Hee and Zhu, Jian-Xin and Lee, Tae-Woo},
abstractNote = {n-Type doping with (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl) dimethylamine (N-DMBI) reduces a work function (WF) of graphene by ~0.45 eV without significant reduction of optical transmittance. Solution process of N-DMBI on graphene provides effective n-type doping effect and air-stability at the same time. Although neutral N-DMBI act as an electron receptor leaving the graphene p-doped, radical N-DMBI acts as an electron donator leaving the graphene n-doped, which is demonstrated by density functional theory. We also verify the suitability of N-DMBI-doped n-type graphene for use as a cathode in inverted polymer light-emitting diodes (PLEDs) by using various analytical methods. Inverted PLEDs using a graphene cathode doped with N-DMBI radical showed dramatically improved device efficiency (~13.8 cd/A) than did inverted PLEDs with pristine graphene (~2.74 cd/A). Finally, N-DMBI-doped graphene can provide a practical way to produce graphene cathodes with low WF in various organic optoelectronics.},
doi = {10.1021/acsami.7b15307},
journal = {ACS Applied Materials and Interfaces},
number = 5,
volume = 10,
place = {United States},
year = {Thu Jan 11 00:00:00 EST 2018},
month = {Thu Jan 11 00:00:00 EST 2018}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 18 works
Citation information provided by
Web of Science

Figures / Tables:

Figure 1 Figure 1: Schematics of inverted PLEDs with N-DMBI-doped graphene, and molecular structure of N-DMBI.

Save / Share:

Works referenced in this record:

Electric Field Effect in Atomically Thin Carbon Films
journal, October 2004


Large-scale pattern growth of graphene films for stretchable transparent electrodes
journal, January 2009


Roll-to-roll production of 30-inch graphene films for transparent electrodes
journal, June 2010

  • Bae, Sukang; Kim, Hyeongkeun; Lee, Youngbin
  • Nature Nanotechnology, Vol. 5, Issue 8, p. 574-578
  • DOI: 10.1038/nnano.2010.132

The rise of graphene
journal, March 2007

  • Geim, A. K.; Novoselov, K. S.
  • Nature Materials, Vol. 6, Issue 3, p. 183-191
  • DOI: 10.1038/nmat1849

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
journal, May 2009


Improvement of work function and hole injection efficiency of graphene anode using CHF 3 plasma treatment
journal, December 2014


Controlled surface oxidation of multi-layered graphene anode to increase hole injection efficiency in organic electronic devices
journal, January 2016


Graphene-based flexible electronic devices
journal, August 2017

  • Han, Tae-Hee; Kim, Hobeom; Kwon, Sung-Joo
  • Materials Science and Engineering: R: Reports, Vol. 118
  • DOI: 10.1016/j.mser.2017.05.001

Extremely efficient flexible organic light-emitting diodes with modified graphene anode
journal, January 2012


Efficient and bright organic light-emitting diodes on single-layer graphene electrodes
journal, August 2013

  • Li, Ning; Oida, Satoshi; Tulevski, George S.
  • Nature Communications, Vol. 4, Issue 1
  • DOI: 10.1038/ncomms3294

Work-Function Engineering of Graphene Anode by Bis(trifluoromethanesulfonyl)amide Doping for Efficient Polymer Light-Emitting Diodes
journal, August 2013

  • Kim, Donghyuk; Lee, Dongchan; Lee, Yonghee
  • Advanced Functional Materials, Vol. 23, Issue 40
  • DOI: 10.1002/adfm201301386

Metal Oxide Induced Charge Transfer Doping and Band Alignment of Graphene Electrodes for Efficient Organic Light Emitting Diodes
journal, June 2014

  • Meyer, Jens; Kidambi, Piran R.; Bayer, Bernhard C.
  • Scientific Reports, Vol. 4, Issue 1
  • DOI: 10.1038/srep05380

Engineering high charge transfer n-doping of graphene electrodes and its application to organic electronics
journal, January 2015

  • Sanders, Simon; Cabrero-Vilatela, Andrea; Kidambi, Piran R.
  • Nanoscale, Vol. 7, Issue 30
  • DOI: 10.1039/C5NR03246F

Workfunction-Tunable, N-Doped Reduced Graphene Transparent Electrodes for High-Performance Polymer Light-Emitting Diodes
journal, December 2011

  • Hwang, Jin Ok; Park, Ji Sun; Choi, Dong Sung
  • ACS Nano, Vol. 6, Issue 1
  • DOI: 10.1021/nn203176u

Versatile p-Type Chemical Doping to Achieve Ideal Flexible Graphene Electrodes
journal, April 2016

  • Han, Tae-Hee; Kwon, Sung-Joo; Li, Nannan
  • Angewandte Chemie International Edition, Vol. 55, Issue 21
  • DOI: 10.1002/anie.201600414

Approaching ultimate flexible organic light-emitting diodes using a graphene anode
journal, September 2016

  • Han, Tae-Hee; Park, Min-Ho; Kwon, Sung-Joo
  • NPG Asia Materials, Vol. 8, Issue 9
  • DOI: 10.1038/am.2016.108

Synergetic electrode architecture for efficient graphene-based flexible organic light-emitting diodes
journal, June 2016

  • Lee, Jaeho; Han, Tae-Hee; Park, Min-Ho
  • Nature Communications, Vol. 7, Issue 1
  • DOI: 10.1038/ncomms11791

Interface Engineering of Layer-by-Layer Stacked Graphene Anodes for High-Performance Organic Solar Cells
journal, January 2011


Organic solar cells using CVD-grown graphene electrodes
journal, December 2013


Ultrathin Organic Solar Cells with Graphene Doped by Ferroelectric Polarization
journal, February 2014

  • Kim, Keumok; Bae, Sang-Hoon; Toh, Chee Tat
  • ACS Applied Materials & Interfaces, Vol. 6, Issue 5
  • DOI: 10.1021/am405270y

On-Fabrication Solid-State N-Doping of Graphene by an Electron-Transporting Metal Oxide Layer for Efficient Inverted Organic Solar Cells
journal, April 2016

  • Kim, Hobeom; Byun, Jinwoo; Bae, Sang-Hoon
  • Advanced Energy Materials, Vol. 6, Issue 12
  • DOI: 10.1002/aenm.201600172

Work-Function Engineering of Graphene Electrodes by Self-Assembled Monolayers for High-Performance Organic Field-Effect Transistors
journal, March 2011

  • Park, Jaesung; Lee, Wi Hyoung; Huh, Sung
  • The Journal of Physical Chemistry Letters, Vol. 2, Issue 8
  • DOI: 10.1021/jz200265w

Large Scale Pattern Graphene Electrode for High Performance in Transparent Organic Single Crystal Field-Effect Transistors
journal, June 2010

  • Liu, Wei; Jackson, Biyun Li; Zhu, Jing
  • ACS Nano, Vol. 4, Issue 7
  • DOI: 10.1021/nn100728p

Synthesis of N-Doped Graphene by Chemical Vapor Deposition and Its Electrical Properties
journal, May 2009

  • Wei, Dacheng; Liu, Yunqi; Wang, Yu
  • Nano Letters, Vol. 9, Issue 5
  • DOI: 10.1021/nl803279t

Controllable N-Doping of Graphene
journal, December 2010

  • Guo, Beidou; Liu, Qian; Chen, Erdan
  • Nano Letters, Vol. 10, Issue 12
  • DOI: 10.1021/nl103079j

Synthesis, Structure, and Properties of Boron- and Nitrogen-Doped Graphene
journal, August 2009


Chemical structures of hydrazine-treated graphene oxide and generation of aromatic nitrogen doping
journal, January 2012

  • Park, Sungjin; Hu, Yichen; Hwang, Jin Ok
  • Nature Communications, Vol. 3, Issue 1
  • DOI: 10.1038/ncomms1643

Band gap opening of monolayer and bilayer graphene doped with aluminium, silicon, phosphorus, and sulfur
journal, June 2010


Can Commonly Used Hydrazine Produce n-Type Graphene?
journal, May 2012

  • Some, Surajit; Bhunia, Prasenjit; Hwang, EunHee
  • Chemistry - A European Journal, Vol. 18, Issue 25
  • DOI: 10.1002/chem.201200104

N-Doping of Graphene Through Electrothermal Reactions with Ammonia
journal, May 2009


N-Doped Graphene Field-Effect Transistors with Enhanced Electron Mobility and Air-Stability
journal, February 2014


Controllable n-Type Doping on CVD-Grown Single- and Double-Layer Graphene Mixture
journal, January 2015


Self-Encapsulated Doping of n-Type Graphene Transistors with Extended Air Stability
journal, June 2012

  • Ho, Po-Hsun; Yeh, Yun-Chieh; Wang, Di-Yan
  • ACS Nano, Vol. 6, Issue 7
  • DOI: 10.1021/nn301639j

25th Anniversary Article: Chemically Modified/Doped Carbon Nanotubes & Graphene for Optimized Nanostructures & Nanodevices
journal, October 2013

  • Maiti, Uday Narayan; Lee, Won Jun; Lee, Ju Min
  • Advanced Materials, Vol. 26, Issue 1
  • DOI: 10.1002/adma.201303265

Nitrogen-doped carbon nanotubes and graphene composite structures for energy and catalytic applications
journal, January 2014

  • Lee, Won Jun; Maiti, Uday Narayan; Lee, Ju Min
  • Chemical Communications, Vol. 50, Issue 52
  • DOI: 10.1039/c4cc00146j

Toward Intrinsic Graphene Surfaces: A Systematic Study on Thermal Annealing and Wet-Chemical Treatment of SiO 2 -Supported Graphene Devices
journal, February 2011

  • Cheng, Zengguang; Zhou, Qiaoyu; Wang, Chenxuan
  • Nano Letters, Vol. 11, Issue 2
  • DOI: 10.1021/nl103977d

Atmospheric Oxygen Binding and Hole Doping in Deformed Graphene on a SiO2 Substrate
journal, December 2010

  • Ryu, Sunmin; Liu, Li; Berciaud, Stephane
  • Nano Letters, Vol. 10, Issue 12, p. 4944-4951
  • DOI: 10.1021/nl1029607

The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO 2
journal, September 2011

  • Pirkle, A.; Chan, J.; Venugopal, A.
  • Applied Physics Letters, Vol. 99, Issue 12
  • DOI: 10.1063/1.3643444

Nitrogen-doped graphene: beyond single substitution and enhanced molecular sensing
journal, August 2012

  • Lv, Ruitao; Li, Qing; Botello-Méndez, Andrés R.
  • Scientific Reports, Vol. 2, Issue 1
  • DOI: 10.1038/srep00586

Adsorption of ammonia on graphene
journal, May 2009


Polyethylene Imine as an Ideal Interlayer for Highly Efficient Inverted Polymer Light-Emitting Diodes
journal, March 2014

  • Kim, Young-Hoon; Han, Tae-Hee; Cho, Himchan
  • Advanced Functional Materials, Vol. 24, Issue 24
  • DOI: 10.1002/adfm.201304163

Air stable hybrid organic-inorganic light emitting diodes using ZnO as the cathode
journal, November 2007

  • Bolink, Henk J.; Coronado, Eugenio; Repetto, Diego
  • Applied Physics Letters, Vol. 91, Issue 22
  • DOI: 10.1063/1.2809387

High Efficiency Composite Metal Oxide-Polymer Electroluminescent Devices: A Morphological and Material Based Investigation
journal, July 2008

  • Kabra, Dinesh; Song, Myoung Hoon; Wenger, Bernard
  • Advanced Materials, Vol. 20, Issue 18
  • DOI: 10.1002/adma.200800202

High performance polymer light-emitting diodes with N-type metal oxide/conjugated polyelectrolyte hybrid charge transport layers
journal, October 2011

  • Sun Park, Ji; Ram Lee, Bo; Jeong, Eunjae
  • Applied Physics Letters, Vol. 99, Issue 16
  • DOI: 10.1063/1.3653962

Highly efficient inverted polymer light-emitting diodes using surface modifications of ZnO layer
journal, September 2014

  • Lee, Bo Ram; Jung, Eui Dae; Park, Ji Sun
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5840

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996


Ab initiomolecular dynamics for liquid metals
journal, January 1993


Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996


Generalized Gradient Approximation Made Simple
journal, October 1996

  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Soft self-consistent pseudopotentials in a generalized eigenvalue formalism
journal, April 1990


Norm-conserving and ultrasoft pseudopotentials for first-row and transition elements
journal, October 1994


Van der Waals density functionals applied to solids
journal, May 2011


Use of a 1 H -Benzoimidazole Derivative as an n -Type Dopant and To Enable Air-Stable Solution-Processed n -Channel Organic Thin-Film Transistors
journal, July 2010

  • Wei, Peng; Oh, Joon Hak; Dong, Guifang
  • Journal of the American Chemical Society, Vol. 132, Issue 26
  • DOI: 10.1021/ja103173m

Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
journal, March 2008


Raman Spectrum of Graphene and Graphene Layers
journal, October 2006


N-Doped Graphene-SnO2 Sandwich Paper for High-Performance Lithium-Ion Batteries
journal, April 2012

  • Wang, Xi; Cao, Xinqiang; Bourgeois, Laure
  • Advanced Functional Materials, Vol. 22, Issue 13
  • DOI: 10.1002/adfm.201103110

Works referencing / citing this record:

The charge carrier dynamics, efficiency and stability of two-dimensional material-based perovskite solar cells
journal, January 2019

  • Wang, Bing; Iocozzia, James; Zhang, Meng
  • Chemical Society Reviews, Vol. 48, Issue 18
  • DOI: 10.1039/c9cs00254e

Efficient n-Dopants and Their Roles in Organic Electronics
journal, July 2018

  • Bin, Zhengyang; Liu, Ziyang; Qiu, Yong
  • Advanced Optical Materials, Vol. 6, Issue 18
  • DOI: 10.1002/adom.201800536

Excellent carrier transport materials produced by controlled molecular stacking and their application in flexible organic electronic devices
journal, January 2019

  • Han, Yong Woon; Song, Ho Jun; Jeon, Sung Jae
  • Journal of Materials Chemistry A, Vol. 7, Issue 24
  • DOI: 10.1039/c9ta02213a

Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.