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Title: N-Doping improves charge transport and morphology in the organic non-fullerene acceptor O-IDTBR

Abstract

Molecular doping has been shown to improve the performance of various organic (opto)electronic devices. When compared to p-doped systems, research into n-doped organic small-molecules is relatively limited, primarily due to the lack of suitable dopants and the often encountered unfavourable microstructural effects. These factors have prevented the use of n-doping in a wider range of existing materials, such as non-fullerene acceptors (NFAs), that have already shown great promise for a range of (opto)electronic applications. Here, we show that several different molecular n-dopants, namely [1,2-b:2',1'-d]benzo[i][2.5]benzodiazocine potassium triflate adduct (DMBI-BDZC), tetra-n-butylammonium fluoride (TBAF) and 4-(2,3-dihydro-1,3-dimethyl-1H-benzimidazol-2-yl)-N,N-dimethylbenzenamine (N-DMBI), can be used to n-dope the molecular semiconductor O-IDTBR, a promising NFA, and increase the electron field-effect mobility to >1 cm2 V-1 s-1. By combining complementary experimental techniques with computer simulations of doping and charge carrier dynamics, we show that improved charge transport arises from synergistic effects of n-type doping and morphological changes. Specifically, a new, previously unreported dopant-induced packing orientation results in one of the highest electron mobility values reported to-date for an NFA molecule. Overall, this work highlights the importance of dopant–semiconductor interactions and their impact on morphology, showing that dopant-induced molecular packing motifs may be generic and a key element of the chargemore » transport enhancement observed in doped organics.« less

Authors:
ORCiD logo [1];  [2];  [3]; ORCiD logo [4];  [5]; ORCiD logo [5];  [5];  [6];  [7];  [7]; ORCiD logo [5]; ORCiD logo [3]; ORCiD logo [6];  [5]; ORCiD logo [5]
  1. Univ. of Kentucky, Lexington, KY (United States); King Abdullah University of Science and Technology (Saudi Arabia)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)
  3. Max Planck Inst. for Polymer Research, Mainz (Germany)
  4. National Technical University of Athens (Greece)
  5. King Abdullah University of Science and Technology (Saudi Arabia)
  6. Imperial College, London (United Kingdom)
  7. Univ. of Oxford (United Kingdom)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1776539
Report Number(s):
BNL-221238-2021-JAAM
Journal ID: ISSN 2050-7526
Grant/Contract Number:  
SC0012704
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Materials Chemistry C
Additional Journal Information:
Journal Volume: 9; Journal Issue: 13; Journal ID: ISSN 2050-7526
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Paterson, Alexandra F., Li, Ruipeng, Markina, Anastasia, Tsetseris, Leonidas, MacPhee, Sky, Faber, Hendrik, Emwas, Abdul-Hamid, Panidi, Julianna, Bristow, Helen, Wadsworth, Andrew, Baran, Derya, Andrienko, Denis, Heeney, Martin, McCulloch, Iain, and Anthopoulos, Thomas D. N-Doping improves charge transport and morphology in the organic non-fullerene acceptor O-IDTBR. United States: N. p., 2021. Web. doi:10.1039/d0tc05861k.
Paterson, Alexandra F., Li, Ruipeng, Markina, Anastasia, Tsetseris, Leonidas, MacPhee, Sky, Faber, Hendrik, Emwas, Abdul-Hamid, Panidi, Julianna, Bristow, Helen, Wadsworth, Andrew, Baran, Derya, Andrienko, Denis, Heeney, Martin, McCulloch, Iain, & Anthopoulos, Thomas D. N-Doping improves charge transport and morphology in the organic non-fullerene acceptor O-IDTBR. United States. https://doi.org/10.1039/d0tc05861k
Paterson, Alexandra F., Li, Ruipeng, Markina, Anastasia, Tsetseris, Leonidas, MacPhee, Sky, Faber, Hendrik, Emwas, Abdul-Hamid, Panidi, Julianna, Bristow, Helen, Wadsworth, Andrew, Baran, Derya, Andrienko, Denis, Heeney, Martin, McCulloch, Iain, and Anthopoulos, Thomas D. Wed . "N-Doping improves charge transport and morphology in the organic non-fullerene acceptor O-IDTBR". United States. https://doi.org/10.1039/d0tc05861k. https://www.osti.gov/servlets/purl/1776539.
@article{osti_1776539,
title = {N-Doping improves charge transport and morphology in the organic non-fullerene acceptor O-IDTBR},
author = {Paterson, Alexandra F. and Li, Ruipeng and Markina, Anastasia and Tsetseris, Leonidas and MacPhee, Sky and Faber, Hendrik and Emwas, Abdul-Hamid and Panidi, Julianna and Bristow, Helen and Wadsworth, Andrew and Baran, Derya and Andrienko, Denis and Heeney, Martin and McCulloch, Iain and Anthopoulos, Thomas D.},
abstractNote = {Molecular doping has been shown to improve the performance of various organic (opto)electronic devices. When compared to p-doped systems, research into n-doped organic small-molecules is relatively limited, primarily due to the lack of suitable dopants and the often encountered unfavourable microstructural effects. These factors have prevented the use of n-doping in a wider range of existing materials, such as non-fullerene acceptors (NFAs), that have already shown great promise for a range of (opto)electronic applications. Here, we show that several different molecular n-dopants, namely [1,2-b:2',1'-d]benzo[i][2.5]benzodiazocine potassium triflate adduct (DMBI-BDZC), tetra-n-butylammonium fluoride (TBAF) and 4-(2,3-dihydro-1,3-dimethyl-1H-benzimidazol-2-yl)-N,N-dimethylbenzenamine (N-DMBI), can be used to n-dope the molecular semiconductor O-IDTBR, a promising NFA, and increase the electron field-effect mobility to >1 cm2 V-1 s-1. By combining complementary experimental techniques with computer simulations of doping and charge carrier dynamics, we show that improved charge transport arises from synergistic effects of n-type doping and morphological changes. Specifically, a new, previously unreported dopant-induced packing orientation results in one of the highest electron mobility values reported to-date for an NFA molecule. Overall, this work highlights the importance of dopant–semiconductor interactions and their impact on morphology, showing that dopant-induced molecular packing motifs may be generic and a key element of the charge transport enhancement observed in doped organics.},
doi = {10.1039/d0tc05861k},
journal = {Journal of Materials Chemistry C},
number = 13,
volume = 9,
place = {United States},
year = {Wed Mar 10 00:00:00 EST 2021},
month = {Wed Mar 10 00:00:00 EST 2021}
}

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