Single-domain epitaxial silicene on diboride thin films
Abstract
Epitaxial silicene, which forms spontaneously on ZrB2(0001) thin films grown on Si(111) wafers, has a periodic stripe domain structure. By adsorbing additional Si atoms on this surface, we find that the domain boundaries vanish, and a single-domain silicene sheet can be prepared without altering its buckled honeycomb structure. The amount of Si required to induce this change suggests that the domain boundaries are made of a local distortion of the silicene honeycomb lattice. LastlThe realization of a single domain sheet with structural and electronic properties close to those of the original striped state demonstrates the high structural flexibility of silicene.
- Authors:
-
- Japan Advanced Inst. of Science and Technology, Nomi, Ishikawa (Japan). School of Materials Science
- Japan Advanced Inst. of Science and Technology, Nomi, Ishikawa (Japan). School of Materials Science; Univ. College London, London (United Kingdom). London Centre for Nanotechnology; niv. College London, London (United Kingdom). Dept. of Chemistry
- Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
- IBM, Yorktown Heights, NY (United States). Thomas J. Watson Research Center
- IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA
- London Centre for Nanotechnology, University College London (UCL), London WC1H 0AH, United Kingdom; Department of Chemistry, UCL, London WC1H 0AJ, United Kingdom; Department of Physics and Astronomy, UCL, London WC1E 6BT, United Kingdom
- Publication Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1335439
- Report Number(s):
- BNL-112106-2016-JA
Journal ID: ISSN 0003-6951; APPLAB; R&D Project: 16083/16083; KC0403020
- Grant/Contract Number:
- SC0012704; 26790005; 26246002; EP/H026622/1; EP/G036675/1
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 108; Journal Issue: 15; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Epitaxy; thin film structure; low energy structure
Citation Formats
Fleurence, A., Gill, T. G., Friedlein, R., Sadowski, J. T., Aoyagi, K., Copel, M., Tromp, R. M., Hirjibehedin, C. F., and Yamada-Takamura, Y. Single-domain epitaxial silicene on diboride thin films. United States: N. p., 2016.
Web. doi:10.1063/1.4945370.
Fleurence, A., Gill, T. G., Friedlein, R., Sadowski, J. T., Aoyagi, K., Copel, M., Tromp, R. M., Hirjibehedin, C. F., & Yamada-Takamura, Y. Single-domain epitaxial silicene on diboride thin films. United States. https://doi.org/10.1063/1.4945370
Fleurence, A., Gill, T. G., Friedlein, R., Sadowski, J. T., Aoyagi, K., Copel, M., Tromp, R. M., Hirjibehedin, C. F., and Yamada-Takamura, Y. Tue .
"Single-domain epitaxial silicene on diboride thin films". United States. https://doi.org/10.1063/1.4945370. https://www.osti.gov/servlets/purl/1335439.
@article{osti_1335439,
title = {Single-domain epitaxial silicene on diboride thin films},
author = {Fleurence, A. and Gill, T. G. and Friedlein, R. and Sadowski, J. T. and Aoyagi, K. and Copel, M. and Tromp, R. M. and Hirjibehedin, C. F. and Yamada-Takamura, Y.},
abstractNote = {Epitaxial silicene, which forms spontaneously on ZrB2(0001) thin films grown on Si(111) wafers, has a periodic stripe domain structure. By adsorbing additional Si atoms on this surface, we find that the domain boundaries vanish, and a single-domain silicene sheet can be prepared without altering its buckled honeycomb structure. The amount of Si required to induce this change suggests that the domain boundaries are made of a local distortion of the silicene honeycomb lattice. LastlThe realization of a single domain sheet with structural and electronic properties close to those of the original striped state demonstrates the high structural flexibility of silicene.},
doi = {10.1063/1.4945370},
journal = {Applied Physics Letters},
number = 15,
volume = 108,
place = {United States},
year = {Tue Apr 12 00:00:00 EDT 2016},
month = {Tue Apr 12 00:00:00 EDT 2016}
}
Web of Science
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