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Title: Single-domain epitaxial silicene on diboride thin films

Abstract

Epitaxial silicene, which forms spontaneously on ZrB2(0001) thin films grown on Si(111) wafers, has a periodic stripe domain structure. By adsorbing additional Si atoms on this surface, we find that the domain boundaries vanish, and a single-domain silicene sheet can be prepared without altering its buckled honeycomb structure. The amount of Si required to induce this change suggests that the domain boundaries are made of a local distortion of the silicene honeycomb lattice. LastlThe realization of a single domain sheet with structural and electronic properties close to those of the original striped state demonstrates the high structural flexibility of silicene.

Authors:
 [1];  [2];  [1]; ORCiD logo [3];  [1];  [4];  [5];  [6];  [1]
  1. Japan Advanced Inst. of Science and Technology, Nomi, Ishikawa (Japan). School of Materials Science
  2. Japan Advanced Inst. of Science and Technology, Nomi, Ishikawa (Japan). School of Materials Science; Univ. College London, London (United Kingdom). London Centre for Nanotechnology; niv. College London, London (United Kingdom). Dept. of Chemistry
  3. Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
  4. IBM, Yorktown Heights, NY (United States). Thomas J. Watson Research Center
  5. IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA
  6. London Centre for Nanotechnology, University College London (UCL), London WC1H 0AH, United Kingdom; Department of Chemistry, UCL, London WC1H 0AJ, United Kingdom; Department of Physics and Astronomy, UCL, London WC1E 6BT, United Kingdom
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1335439
Report Number(s):
BNL-112106-2016-JA
Journal ID: ISSN 0003-6951; APPLAB; R&D Project: 16083/16083; KC0403020
Grant/Contract Number:  
SC0012704; 26790005; 26246002; EP/H026622/1; EP/G036675/1
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 15; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Epitaxy; thin film structure; low energy structure

Citation Formats

Fleurence, A., Gill, T. G., Friedlein, R., Sadowski, J. T., Aoyagi, K., Copel, M., Tromp, R. M., Hirjibehedin, C. F., and Yamada-Takamura, Y. Single-domain epitaxial silicene on diboride thin films. United States: N. p., 2016. Web. doi:10.1063/1.4945370.
Fleurence, A., Gill, T. G., Friedlein, R., Sadowski, J. T., Aoyagi, K., Copel, M., Tromp, R. M., Hirjibehedin, C. F., & Yamada-Takamura, Y. Single-domain epitaxial silicene on diboride thin films. United States. https://doi.org/10.1063/1.4945370
Fleurence, A., Gill, T. G., Friedlein, R., Sadowski, J. T., Aoyagi, K., Copel, M., Tromp, R. M., Hirjibehedin, C. F., and Yamada-Takamura, Y. Tue . "Single-domain epitaxial silicene on diboride thin films". United States. https://doi.org/10.1063/1.4945370. https://www.osti.gov/servlets/purl/1335439.
@article{osti_1335439,
title = {Single-domain epitaxial silicene on diboride thin films},
author = {Fleurence, A. and Gill, T. G. and Friedlein, R. and Sadowski, J. T. and Aoyagi, K. and Copel, M. and Tromp, R. M. and Hirjibehedin, C. F. and Yamada-Takamura, Y.},
abstractNote = {Epitaxial silicene, which forms spontaneously on ZrB2(0001) thin films grown on Si(111) wafers, has a periodic stripe domain structure. By adsorbing additional Si atoms on this surface, we find that the domain boundaries vanish, and a single-domain silicene sheet can be prepared without altering its buckled honeycomb structure. The amount of Si required to induce this change suggests that the domain boundaries are made of a local distortion of the silicene honeycomb lattice. LastlThe realization of a single domain sheet with structural and electronic properties close to those of the original striped state demonstrates the high structural flexibility of silicene.},
doi = {10.1063/1.4945370},
journal = {Applied Physics Letters},
number = 15,
volume = 108,
place = {United States},
year = {Tue Apr 12 00:00:00 EDT 2016},
month = {Tue Apr 12 00:00:00 EDT 2016}
}

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Works referenced in this record:

A topological insulator and helical zero mode in silicene under an inhomogeneous electric field
journal, March 2012


Photoinduced Topological Phase Transition and a Single Dirac-Cone State in Silicene
journal, January 2013


Gated silicene as a tunable source of nearly 100% spin-polarized electrons
journal, February 2013

  • Tsai, Wei-Feng; Huang, Cheng-Yi; Chang, Tay-Rong
  • Nature Communications, Vol. 4, Article No. 1500
  • DOI: 10.1038/ncomms2525

Multilayer Silicene Nanoribbons
journal, October 2012

  • De Padova, Paola; Kubo, Osamu; Olivieri, Bruno
  • Nano Letters, Vol. 12, Issue 11
  • DOI: 10.1021/nl302598x

Structure of Silicene Grown on Ag(111)
journal, March 2012

  • Lin, Chun-Liang; Arafune, Ryuichi; Kawahara, Kazuaki
  • Applied Physics Express, Vol. 5, Issue 4
  • DOI: 10.1143/APEX.5.045802

Evidence of Silicene in Honeycomb Structures of Silicon on Ag(111)
journal, June 2012

  • Feng, Baojie; Ding, Zijing; Meng, Sheng
  • Nano Letters, Vol. 12, Issue 7, p. 3507-3511
  • DOI: 10.1021/nl301047g

Growth of silicene layers on Ag(111): unexpected effect of the substrate temperature
journal, April 2012


Local Electronic Properties of Corrugated Silicene Phases
journal, July 2012

  • Chiappe, Daniele; Grazianetti, Carlo; Tallarida, Grazia
  • Advanced Materials, Vol. 24, Issue 37
  • DOI: 10.1002/adma.201202100

Silicene: Compelling Experimental Evidence for Graphenelike Two-Dimensional Silicon
journal, April 2012


Evidence for Dirac Fermions in a Honeycomb Lattice Based on Silicon
journal, August 2012


Spontaneous Symmetry Breaking and Dynamic Phase Transition in Monolayer Silicene
journal, February 2013


Evidence of Dirac fermions in multilayer silicene
journal, April 2013

  • De Padova, Paola; Vogt, Patrick; Resta, Andrea
  • Applied Physics Letters, Vol. 102, Issue 16
  • DOI: 10.1063/1.4802782

Experimental Evidence for Epitaxial Silicene on Diboride Thin Films
journal, June 2012


Phonon dispersion of silicene on ZrB 2 (0 0 0 1)
journal, July 2015


Buckled Silicene Formation on Ir(111)
journal, January 2013

  • Meng, Lei; Wang, Yeliang; Zhang, Lizhi
  • Nano Letters, Vol. 13, Issue 2, p. 685-690
  • DOI: 10.1021/nl304347w

Silicene on Zirconium Carbide (111)
journal, September 2014

  • Aizawa, Takashi; Suehara, Shigeru; Otani, Shigeki
  • The Journal of Physical Chemistry C, Vol. 118, Issue 40
  • DOI: 10.1021/jp505602c

Band structure of silicene on zirconium diboride (0001) thin-film surface: Convergence of experiment and calculations in the one-Si-atom Brillouin zone
journal, August 2014


Surface electronic structure of ZrB2 buffer layers for GaN growth on Si wafers
journal, August 2010

  • Yamada-Takamura, Yukiko; Bussolotti, Fabio; Fleurence, Antoine
  • Applied Physics Letters, Vol. 97, Issue 7
  • DOI: 10.1063/1.3481414

Avoiding critical-point phonon instabilities in two-dimensional materials: The origin of the stripe formation in epitaxial silicene
journal, December 2014


Spontaneous Formation of Stress Domains on Crystal Surfaces
journal, October 1988


Silicene field-effect transistors operating at room temperature
journal, February 2015

  • Tao, Li; Cinquanta, Eugenio; Chiappe, Daniele
  • Nature Nanotechnology, Vol. 10, Issue 3
  • DOI: 10.1038/nnano.2014.325

Mechanisms of parasitic crystallites formation in ZrB2(0001) buffer layer grown on Si(111)
journal, November 2013


Ion beam crystallography of surfaces and interfaces
journal, December 1985


Core level excitations—A fingerprint of structural and electronic properties of epitaxial silicene
journal, May 2014

  • Friedlein, R.; Fleurence, A.; Aoyagi, K.
  • The Journal of Chemical Physics, Vol. 140, Issue 18
  • DOI: 10.1063/1.4875075

Strain-induced self-doping in silicene and germanene from first-principles
journal, February 2013


Local Reconstructions of Silicene Induced by Adatoms
journal, December 2013

  • Özçelik, V. Ongun; Ciraci, S.
  • The Journal of Physical Chemistry C, Vol. 117, Issue 49
  • DOI: 10.1021/jp408647t

Diverse forms of bonding in two-dimensional Si allotropes: Nematic orbitals in the MoS 2 structure
journal, October 2014


The structure of suspended graphene sheets
journal, March 2007

  • Meyer, Jannik C.; Geim, A. K.; Katsnelson, M. I.
  • Nature, Vol. 446, Issue 7131, p. 60-63
  • DOI: 10.1038/nature05545

Works referencing / citing this record:

Guided Molecular Assembly on a Locally Reactive 2D Material
journal, October 2017

  • Warner, Ben; Gill, Tobias G.; Caciuc, Vasile
  • Advanced Materials, Vol. 29, Issue 43
  • DOI: 10.1002/adma.201703929

Functionalization of group-14 two-dimensional materials
journal, May 2018


Influence of edge magnetization and electric fields on zigzag silicene, germanene and stanene nanoribbons
journal, January 2019

  • Hattori, Ayami; Yada, Keiji; Araidai, Masaaki
  • Journal of Physics: Condensed Matter, Vol. 31, Issue 10
  • DOI: 10.1088/1361-648x/aaf8ce

Van der Waals integration of silicene and hexagonal boron nitride
journal, April 2019


Overview of Rational Design of Binary Alloy for the Synthesis of Two-Dimensional Materials
journal, January 2020