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Title: A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB{sub 2}

Abstract

We present a method for the formation of an epitaxial  surface layer involving B, N, and Si atoms on a ZrB{sub 2}(0001) thin film on Si(111). It has the potential to be an insulating growth template for 2D semiconductors. The chemical reaction of NH{sub 3} molecules with the silicene-terminated ZrB{sub 2}  surface was characterized by synchrotron-based, high-resolution core-level photoelectron spectroscopy and low-energy electron diffraction. In particular, the dissociative chemisorption of NH{sub 3} at 400 °C leads to surface  nitridation, and subsequent annealing up to 830 °C results in a solid phase reaction with the ZrB{sub 2} subsurface layers. In this way, a new nitride-based epitaxial  surface layer is formed with hexagonal symmetry and a single in-plane crystal orientation.

Authors:
; ; ;  [1]; ;  [2]
  1. MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede (Netherlands)
  2. School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292 (Japan)
Publication Date:
OSTI Identifier:
22657893
Resource Type:
Journal Article
Journal Name:
Journal of Chemical Physics
Additional Journal Information:
Journal Volume: 144; Journal Issue: 13; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-9606
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; AMMONIA; CRYSTAL GROWTH; ELECTRON DIFFRACTION; EPITAXY; LAYERS; NITRIDATION; NITRIDES; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SURFACES; THIN FILMS; ZIRCONIUM BORIDES

Citation Formats

Wiggers, F. B., E-mail: F.B.Wiggers@utwente.nl, Van Bui, H., Schmitz, J., Kovalgin, A. Y., Jong, M. P. de, Friedlein, R., and Yamada-Takamura, Y. A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB{sub 2}. United States: N. p., 2016. Web. doi:10.1063/1.4944579.
Wiggers, F. B., E-mail: F.B.Wiggers@utwente.nl, Van Bui, H., Schmitz, J., Kovalgin, A. Y., Jong, M. P. de, Friedlein, R., & Yamada-Takamura, Y. A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB{sub 2}. United States. https://doi.org/10.1063/1.4944579
Wiggers, F. B., E-mail: F.B.Wiggers@utwente.nl, Van Bui, H., Schmitz, J., Kovalgin, A. Y., Jong, M. P. de, Friedlein, R., and Yamada-Takamura, Y. 2016. "A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB{sub 2}". United States. https://doi.org/10.1063/1.4944579.
@article{osti_22657893,
title = {A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB{sub 2}},
author = {Wiggers, F. B., E-mail: F.B.Wiggers@utwente.nl and Van Bui, H. and Schmitz, J. and Kovalgin, A. Y. and Jong, M. P. de and Friedlein, R. and Yamada-Takamura, Y.},
abstractNote = {We present a method for the formation of an epitaxial  surface layer involving B, N, and Si atoms on a ZrB{sub 2}(0001) thin film on Si(111). It has the potential to be an insulating growth template for 2D semiconductors. The chemical reaction of NH{sub 3} molecules with the silicene-terminated ZrB{sub 2}  surface was characterized by synchrotron-based, high-resolution core-level photoelectron spectroscopy and low-energy electron diffraction. In particular, the dissociative chemisorption of NH{sub 3} at 400 °C leads to surface  nitridation, and subsequent annealing up to 830 °C results in a solid phase reaction with the ZrB{sub 2} subsurface layers. In this way, a new nitride-based epitaxial  surface layer is formed with hexagonal symmetry and a single in-plane crystal orientation.},
doi = {10.1063/1.4944579},
url = {https://www.osti.gov/biblio/22657893}, journal = {Journal of Chemical Physics},
issn = {0021-9606},
number = 13,
volume = 144,
place = {United States},
year = {Thu Apr 07 00:00:00 EDT 2016},
month = {Thu Apr 07 00:00:00 EDT 2016}
}