Single-domain epitaxial silicene on diboride thin films
- School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)
- IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
- London Centre for Nanotechnology, University College London (UCL), London WC1H 0AH (United Kingdom)
Epitaxial silicene, which forms spontaneously on ZrB{sub 2}(0001) thin films grown on Si(111) wafers, has a periodic stripe domain structure. By adsorbing additional Si atoms on this surface, we find that the domain boundaries vanish, and a single-domain silicene sheet can be prepared without altering its buckled honeycomb structure. The amount of Si required to induce this change suggests that the domain boundaries are made of a local distortion of the silicene honeycomb lattice. The realization of a single domain sheet with structural and electronic properties close to those of the original striped state demonstrates the high structural flexibility of silicene.
- OSTI ID:
- 22591556
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 15; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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