skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Single-domain epitaxial silicene on diboride thin films

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4945370· OSTI ID:22591556
; ;  [1];  [1];  [2]; ;  [3];  [4]
  1. School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)
  2. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)
  3. IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
  4. London Centre for Nanotechnology, University College London (UCL), London WC1H 0AH (United Kingdom)

Epitaxial silicene, which forms spontaneously on ZrB{sub 2}(0001) thin films grown on Si(111) wafers, has a periodic stripe domain structure. By adsorbing additional Si atoms on this surface, we find that the domain boundaries vanish, and a single-domain silicene sheet can be prepared without altering its buckled honeycomb structure. The amount of Si required to induce this change suggests that the domain boundaries are made of a local distortion of the silicene honeycomb lattice. The realization of a single domain sheet with structural and electronic properties close to those of the original striped state demonstrates the high structural flexibility of silicene.

OSTI ID:
22591556
Journal Information:
Applied Physics Letters, Vol. 108, Issue 15; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English

Cited By (3)

Guided Molecular Assembly on a Locally Reactive 2D Material journal October 2017
Van der Waals integration of silicene and hexagonal boron nitride journal April 2019
Overview of Rational Design of Binary Alloy for the Synthesis of Two-Dimensional Materials journal January 2020

Similar Records

Single-domain epitaxial silicene on diboride thin films
Journal Article · Tue Apr 12 00:00:00 EDT 2016 · Applied Physics Letters · OSTI ID:22591556

Microscopic origin of the π states in epitaxial silicene
Journal Article · Mon Jan 13 00:00:00 EST 2014 · Applied Physics Letters · OSTI ID:22591556

Core level excitations—A fingerprint of structural and electronic properties of epitaxial silicene
Journal Article · Wed May 14 00:00:00 EDT 2014 · Journal of Chemical Physics · OSTI ID:22591556