Controllable Growth of Perovskite Films by Room-Temperature Air Exposure for Efficient Planar Heterojunction Photovoltaic Cells
Abstract
A two-step-solution-processing approach has been established to grow void-free perovskite films for low-cost and high-performance planar heterojunction photovoltaic devices. We generally applied a high-temperature thermal annealing treatment in order to drive the diffusion of CH3NH3I precursor molecules into the compact PbI2 layer to form perovskite films. But, thermal annealing for extended periods would lead to degraded device performance due to the defects generated by decomposition of perovskite into PbI2. In this work, we explored a controllable layer-by-layer spin-coating method to grow bilayer CH3NH3I/PbI2 films, and then drive the interdiffusion between PbI2 and CH3NH3I layers by a simple room-temperature-air-exposure for making well-oriented, highly-crystalline perovskite films without thermal annealing. This high degree of crystallinity resulted in a carrier diffusion length of ~ 800 nm and high device efficiency of 15.6%, which is comparable to the reported values from thermally-annealed perovskite films based counterparts. Finally, the simplicity and high device performance of this processing approach is highly promising for direct integration into industrial-scale device manufacture.
- Authors:
-
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Univ. of Tennessee, Knoxville, TN (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1279393
- Alternate Identifier(s):
- OSTI ID: 1786131
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Angewandte Chemie (International Edition)
- Additional Journal Information:
- Journal Name: Angewandte Chemie (International Edition); Journal Volume: 54; Journal Issue: 49; Journal ID: ISSN 1433-7851
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; air exposure; in situ X-ray diffraction; perovskites; photovoltaic devices; thin films
Citation Formats
Yang, Bin, Dyck, Ondrej, Poplawsky, Jonathan, Keum, Jong, Das, Sanjib, Puretzky, Alexander, Aytug, Tolga, Joshi, Pooran C., Rouleau, Christopher M., Duscher, Gerd, Geohegan, David B., and Xiao, Kai. Controllable Growth of Perovskite Films by Room-Temperature Air Exposure for Efficient Planar Heterojunction Photovoltaic Cells. United States: N. p., 2015.
Web. doi:10.1002/anie.201505882.
Yang, Bin, Dyck, Ondrej, Poplawsky, Jonathan, Keum, Jong, Das, Sanjib, Puretzky, Alexander, Aytug, Tolga, Joshi, Pooran C., Rouleau, Christopher M., Duscher, Gerd, Geohegan, David B., & Xiao, Kai. Controllable Growth of Perovskite Films by Room-Temperature Air Exposure for Efficient Planar Heterojunction Photovoltaic Cells. United States. https://doi.org/10.1002/anie.201505882
Yang, Bin, Dyck, Ondrej, Poplawsky, Jonathan, Keum, Jong, Das, Sanjib, Puretzky, Alexander, Aytug, Tolga, Joshi, Pooran C., Rouleau, Christopher M., Duscher, Gerd, Geohegan, David B., and Xiao, Kai. Tue .
"Controllable Growth of Perovskite Films by Room-Temperature Air Exposure for Efficient Planar Heterojunction Photovoltaic Cells". United States. https://doi.org/10.1002/anie.201505882. https://www.osti.gov/servlets/purl/1279393.
@article{osti_1279393,
title = {Controllable Growth of Perovskite Films by Room-Temperature Air Exposure for Efficient Planar Heterojunction Photovoltaic Cells},
author = {Yang, Bin and Dyck, Ondrej and Poplawsky, Jonathan and Keum, Jong and Das, Sanjib and Puretzky, Alexander and Aytug, Tolga and Joshi, Pooran C. and Rouleau, Christopher M. and Duscher, Gerd and Geohegan, David B. and Xiao, Kai},
abstractNote = {A two-step-solution-processing approach has been established to grow void-free perovskite films for low-cost and high-performance planar heterojunction photovoltaic devices. We generally applied a high-temperature thermal annealing treatment in order to drive the diffusion of CH3NH3I precursor molecules into the compact PbI2 layer to form perovskite films. But, thermal annealing for extended periods would lead to degraded device performance due to the defects generated by decomposition of perovskite into PbI2. In this work, we explored a controllable layer-by-layer spin-coating method to grow bilayer CH3NH3I/PbI2 films, and then drive the interdiffusion between PbI2 and CH3NH3I layers by a simple room-temperature-air-exposure for making well-oriented, highly-crystalline perovskite films without thermal annealing. This high degree of crystallinity resulted in a carrier diffusion length of ~ 800 nm and high device efficiency of 15.6%, which is comparable to the reported values from thermally-annealed perovskite films based counterparts. Finally, the simplicity and high device performance of this processing approach is highly promising for direct integration into industrial-scale device manufacture.},
doi = {10.1002/anie.201505882},
journal = {Angewandte Chemie (International Edition)},
number = 49,
volume = 54,
place = {United States},
year = {Tue Dec 01 00:00:00 EST 2015},
month = {Tue Dec 01 00:00:00 EST 2015}
}
Web of Science
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