Process–Structure–Properties Relationships of Passivating, Electron–Selective Contacts Formed by Atmospheric Pressure Chemical Vapor Deposition of Phosphorus–Doped Polysilicon
Abstract
Herein, we investigate the process–structure–properties relationships of in situ phosphorus (P)-doped polycrystalline silicon (poly-Si) films by atmospheric pressure chemical vapor deposition (APCVD) for fabricating poly-Si passivating, electron selective contacts. This high-throughput in-line APCVD technique enables to achieve a low-cost, simple manufacturing process for crystalline silicon (c-Si) solar cells featuring poly-Si passivating contact by excluding the need for vacuum/plasma environment, and additional post-deposition doping steps. A thin layer of this P-doped poly-Si is deposited on an ultrathin (1.5 nm) silicon oxide (SiO x) coated c-Si substrate to fabricate the passivating contact. This is followed by various post-deposition treatments, including a high-temperature annealing step and hydrogenation process. The poly-Si films are characterized to achieve a better understanding of the impacts of deposition process conditions and post-deposition treatments on the microstructure, electrical conductivity, passivation quality, and carrier selectivity of the contacts which assists to identify the optimal process conditions. In this work, the optimized annealing process with post-hydrogenation yields passivating contact with a saturation current density (J 0) of 3 fA cm–2 and an implied open-circuit voltage (iV OC) of 712 mV on planar c-Si wafer. Junction resistivity values ranging from 50 to 260 mΩ cm2 are realized for the poly-Si contacts processedmore »
- Authors:
-
[1];
[1]
- University of Central Florida, Orlando, FL (United States)
- Schmid Thermal Systems Inc., Watsonville, CA (United States)
- Schmid Group R&D, Freundenstadt (Germany)
- Publication Date:
- Research Org.:
- Univ. of Central Florida, Orlando, FL (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- OSTI Identifier:
- 2212850
- Grant/Contract Number:
- EE0008980
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physica Status Solidi. Rapid Research Letters
- Additional Journal Information:
- Journal Volume: 16; Journal Issue: 5; Journal ID: ISSN 1862-6254
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; passivating carrier selective contacts; APCVD; microstructure; polycrystalline silicon; solar cells; TOPCOn; POLO
Citation Formats
Mousumi, Jannatul Ferdous, Gregory, Geoffrey, Ganesan, Jeya Prakash, Nunez, Christian, Provancha, Kenneth, Seren, Sven, Zunft, Heiko, Jurca, Titel, Banerjee, Parag, Kar, Aravinda, Kumar, Ranganathan, and Davis, Kristopher O. Process–Structure–Properties Relationships of Passivating, Electron–Selective Contacts Formed by Atmospheric Pressure Chemical Vapor Deposition of Phosphorus–Doped Polysilicon. United States: N. p., 2022.
Web. doi:10.1002/pssr.202100639.
Mousumi, Jannatul Ferdous, Gregory, Geoffrey, Ganesan, Jeya Prakash, Nunez, Christian, Provancha, Kenneth, Seren, Sven, Zunft, Heiko, Jurca, Titel, Banerjee, Parag, Kar, Aravinda, Kumar, Ranganathan, & Davis, Kristopher O. Process–Structure–Properties Relationships of Passivating, Electron–Selective Contacts Formed by Atmospheric Pressure Chemical Vapor Deposition of Phosphorus–Doped Polysilicon. United States. https://doi.org/10.1002/pssr.202100639
Mousumi, Jannatul Ferdous, Gregory, Geoffrey, Ganesan, Jeya Prakash, Nunez, Christian, Provancha, Kenneth, Seren, Sven, Zunft, Heiko, Jurca, Titel, Banerjee, Parag, Kar, Aravinda, Kumar, Ranganathan, and Davis, Kristopher O. Thu .
"Process–Structure–Properties Relationships of Passivating, Electron–Selective Contacts Formed by Atmospheric Pressure Chemical Vapor Deposition of Phosphorus–Doped Polysilicon". United States. https://doi.org/10.1002/pssr.202100639. https://www.osti.gov/servlets/purl/2212850.
@article{osti_2212850,
title = {Process–Structure–Properties Relationships of Passivating, Electron–Selective Contacts Formed by Atmospheric Pressure Chemical Vapor Deposition of Phosphorus–Doped Polysilicon},
author = {Mousumi, Jannatul Ferdous and Gregory, Geoffrey and Ganesan, Jeya Prakash and Nunez, Christian and Provancha, Kenneth and Seren, Sven and Zunft, Heiko and Jurca, Titel and Banerjee, Parag and Kar, Aravinda and Kumar, Ranganathan and Davis, Kristopher O.},
abstractNote = {Herein, we investigate the process–structure–properties relationships of in situ phosphorus (P)-doped polycrystalline silicon (poly-Si) films by atmospheric pressure chemical vapor deposition (APCVD) for fabricating poly-Si passivating, electron selective contacts. This high-throughput in-line APCVD technique enables to achieve a low-cost, simple manufacturing process for crystalline silicon (c-Si) solar cells featuring poly-Si passivating contact by excluding the need for vacuum/plasma environment, and additional post-deposition doping steps. A thin layer of this P-doped poly-Si is deposited on an ultrathin (1.5 nm) silicon oxide (SiO x) coated c-Si substrate to fabricate the passivating contact. This is followed by various post-deposition treatments, including a high-temperature annealing step and hydrogenation process. The poly-Si films are characterized to achieve a better understanding of the impacts of deposition process conditions and post-deposition treatments on the microstructure, electrical conductivity, passivation quality, and carrier selectivity of the contacts which assists to identify the optimal process conditions. In this work, the optimized annealing process with post-hydrogenation yields passivating contact with a saturation current density (J 0) of 3 fA cm–2 and an implied open-circuit voltage (iV OC) of 712 mV on planar c-Si wafer. Junction resistivity values ranging from 50 to 260 mΩ cm2 are realized for the poly-Si contacts processed in the optimal annealing condition.},
doi = {10.1002/pssr.202100639},
journal = {Physica Status Solidi. Rapid Research Letters},
number = 5,
volume = 16,
place = {United States},
year = {Thu Jan 27 00:00:00 EST 2022},
month = {Thu Jan 27 00:00:00 EST 2022}
}
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