skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ultrathin silicon oxide prepared by in-line plasma-assisted N2O oxidation (PANO) and the application for n-type polysilicon passivated contact

Abstract

We develop a plasma-assisted nitrous-oxide (N2O) gas oxidation (PANO) method to prepare the ultrathin silicon oxide (SiOx) for polysilicon (poly-Si) passivated contact. The effects of preparation conditions, including the substrate temperature, processing time, and plasma power, are studied. Afterwards, we integrate the PANO SiOx into the polysilicon passivated contact and optimize the passivation and contact performances. Excellent surface passivation with the n-type poly-Si and PANO SiOx on the n-type c-Si wafer is achieved by 880 °C annealing, which shows competitive passivation quality to the one with NASO SiOx. Champion implied open-circuit voltage (iVoc) and single-sided recombination saturated current (J0) reach 730 mV and 4.3 fA/cm2 after crystallization; and they are further improved to 747 mV and 2.0 fA/cm2 (3 × 1015cm-3) after subsequent AlOx/SiNx hydrogenation. Using transmission electron microscopy (TEM), we find that the thickness of PANO SiOx ranges 1.1–2.4 nm and the controlled nitric acid oxidized SiOx (NAOS) ranges 1.3–1.8 nm. The contact resistivity (ρc) is typically <10 mΩ cm2 with the annealing temperature of >820 °C. Also, the crystallinity, phosphorous in-diffusion profile, and current-leaking density of the passivated contacts are investigated. In general, the PANO SiOx and in-situ doping amorphous silicon precursor can be fabricated in one PECVDmore » system without additional equipment or transfer procedures, which is favorable for the high-efficiency, low-cost industrial manufacture.« less

Authors:
 [1];  [1];  [2];  [1];  [3];  [1];  [4];  [1];  [5];  [5];  [5];  [5];  [3];  [6];  [1];  [1];  [1]
  1. Chinese Academy of Sciences (CAS), Ningbo City (China). Ningbo Materials Inst. of Technology and Engineering
  2. Chinese Academy of Sciences (CAS), Ningbo City (China). Ningbo Materials Inst. of Technology and Engineering; Jiangsu Univ., Zhenjiang City (China). School of Material Science & Engineering
  3. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  4. Jiangsu Univ., Zhenjiang City (China). School of Material Science & Engineering
  5. Zhejiang Jinko Solar Co. Ltd, Haining City (China)
  6. Zhejiang Energy Group R&D, Hangzhou (China)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1592396
Report Number(s):
NREL/JA-5K00-75830
Journal ID: ISSN 0927-0248
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Solar Energy Materials and Solar Cells
Additional Journal Information:
Journal Volume: 208; Journal Issue: C; Journal ID: ISSN 0927-0248
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; polysilicon passivated contact; plasma-assisted N2O oxidation; ultrathin silicon oxide; TOPCon

Citation Formats

Huang, Yuqing, Liao, Mingdun, Wang, Zhixue, Guo, Xueqi, Jiang, Chunsheng, Yang, Qing, Yuan, Zhizhong, Huang, Dandan, Yang, Jie, Zhang, Xinyu, Wang, Qi, Jin, Hao, Al-Jassim, Mowafak, Shou, Chunhui, Zeng, Yuheng, Yan, Baojie, and Ye, Jichun. Ultrathin silicon oxide prepared by in-line plasma-assisted N2O oxidation (PANO) and the application for n-type polysilicon passivated contact. United States: N. p., 2020. Web. https://doi.org/10.1016/j.solmat.2019.110389.
Huang, Yuqing, Liao, Mingdun, Wang, Zhixue, Guo, Xueqi, Jiang, Chunsheng, Yang, Qing, Yuan, Zhizhong, Huang, Dandan, Yang, Jie, Zhang, Xinyu, Wang, Qi, Jin, Hao, Al-Jassim, Mowafak, Shou, Chunhui, Zeng, Yuheng, Yan, Baojie, & Ye, Jichun. Ultrathin silicon oxide prepared by in-line plasma-assisted N2O oxidation (PANO) and the application for n-type polysilicon passivated contact. United States. https://doi.org/10.1016/j.solmat.2019.110389
Huang, Yuqing, Liao, Mingdun, Wang, Zhixue, Guo, Xueqi, Jiang, Chunsheng, Yang, Qing, Yuan, Zhizhong, Huang, Dandan, Yang, Jie, Zhang, Xinyu, Wang, Qi, Jin, Hao, Al-Jassim, Mowafak, Shou, Chunhui, Zeng, Yuheng, Yan, Baojie, and Ye, Jichun. Thu . "Ultrathin silicon oxide prepared by in-line plasma-assisted N2O oxidation (PANO) and the application for n-type polysilicon passivated contact". United States. https://doi.org/10.1016/j.solmat.2019.110389. https://www.osti.gov/servlets/purl/1592396.
@article{osti_1592396,
title = {Ultrathin silicon oxide prepared by in-line plasma-assisted N2O oxidation (PANO) and the application for n-type polysilicon passivated contact},
author = {Huang, Yuqing and Liao, Mingdun and Wang, Zhixue and Guo, Xueqi and Jiang, Chunsheng and Yang, Qing and Yuan, Zhizhong and Huang, Dandan and Yang, Jie and Zhang, Xinyu and Wang, Qi and Jin, Hao and Al-Jassim, Mowafak and Shou, Chunhui and Zeng, Yuheng and Yan, Baojie and Ye, Jichun},
abstractNote = {We develop a plasma-assisted nitrous-oxide (N2O) gas oxidation (PANO) method to prepare the ultrathin silicon oxide (SiOx) for polysilicon (poly-Si) passivated contact. The effects of preparation conditions, including the substrate temperature, processing time, and plasma power, are studied. Afterwards, we integrate the PANO SiOx into the polysilicon passivated contact and optimize the passivation and contact performances. Excellent surface passivation with the n-type poly-Si and PANO SiOx on the n-type c-Si wafer is achieved by 880 °C annealing, which shows competitive passivation quality to the one with NASO SiOx. Champion implied open-circuit voltage (iVoc) and single-sided recombination saturated current (J0) reach 730 mV and 4.3 fA/cm2 after crystallization; and they are further improved to 747 mV and 2.0 fA/cm2 (3 × 1015cm-3) after subsequent AlOx/SiNx hydrogenation. Using transmission electron microscopy (TEM), we find that the thickness of PANO SiOx ranges 1.1–2.4 nm and the controlled nitric acid oxidized SiOx (NAOS) ranges 1.3–1.8 nm. The contact resistivity (ρc) is typically <10 mΩ cm2 with the annealing temperature of >820 °C. Also, the crystallinity, phosphorous in-diffusion profile, and current-leaking density of the passivated contacts are investigated. In general, the PANO SiOx and in-situ doping amorphous silicon precursor can be fabricated in one PECVD system without additional equipment or transfer procedures, which is favorable for the high-efficiency, low-cost industrial manufacture.},
doi = {10.1016/j.solmat.2019.110389},
journal = {Solar Energy Materials and Solar Cells},
number = C,
volume = 208,
place = {United States},
year = {2020},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 3 works
Citation information provided by
Web of Science

Save / Share: