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Title: Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes

Abstract

III-nitride light-emitting diodes (LEDs) exhibit an injection-dependent emission blueshift and linewidth broadening that is severely detrimental to their color purity. By using first-principles multi-scale modeling that accurately captures the competition between polarization-charge screening, phase-space filling, and many-body plasma renormalization, we explain the current-dependent spectral characteristics of polar III-nitride LEDs fabricated with state-of-the-art quantum wells. Our analysis uncovers a fundamental connection between carrier dynamics and the injection-dependent spectral characteristics of light-emitting materials. For example, polar III-nitride LEDs offer poor control over their injection-dependent color purity due to their poor hole transport and slow carrier-recombination dynamics, which forces them to operate at or near degenerate carrier densities. Designs that accelerate carrier recombination and transport and reduce the carrier density required to operate LEDs at a given current density lessen their injection-dependent wavelength shift and linewidth broadening.

Authors:
ORCiD logo [1];  [2];  [2]; ORCiD logo [2];  [3]; ORCiD logo [1]
+ Show Author Affiliations
  1. Univ. of Michigan, Ann Arbor, MI (United States)
  2. Univ. of New Mexico, Albuquerque, NM (United States)
  3. Lumileds LLC, San Jose, CA (United States)
Publication Date:
Research Org.:
Lumileds LLC, San Jose, CA (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
OSTI Identifier:
1959226
Alternate Identifier(s):
OSTI ID: 1906232
Report Number(s):
DOE-LUM-09163-231
Journal ID: ISSN 2158-3226; TRN: US2312842
Grant/Contract Number:  
EE0009163; AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 12; Journal Issue: 12; Journal ID: ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 77 NANOSCIENCE AND NANOTECHNOLOGY; Quantum wells; Emission spectroscopy; Spectral linewidths; Light emitting diodes; Local density approximations; Charge recombination; Optoelectronic devices; Nitrides; Electroluminescent spectra; Multiscale methods

Citation Formats

Pant, Nick, Li, Xuefeng, DeJong, Elizabeth, Feezell, Daniel, Armitage, Rob, and Kioupakis, Emmanouil. Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes. United States: N. p., 2022. Web. doi:10.1063/5.0134995.
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Pant, Nick, Li, Xuefeng, DeJong, Elizabeth, Feezell, Daniel, Armitage, Rob, & Kioupakis, Emmanouil. Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes. United States. https://doi.org/10.1063/5.0134995
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Pant, Nick, Li, Xuefeng, DeJong, Elizabeth, Feezell, Daniel, Armitage, Rob, and Kioupakis, Emmanouil. Wed . "Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes". United States. https://doi.org/10.1063/5.0134995. https://www.osti.gov/servlets/purl/1959226.
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@article{osti_1959226,
title = {Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes},
author = {Pant, Nick and Li, Xuefeng and DeJong, Elizabeth and Feezell, Daniel and Armitage, Rob and Kioupakis, Emmanouil},
abstractNote = {III-nitride light-emitting diodes (LEDs) exhibit an injection-dependent emission blueshift and linewidth broadening that is severely detrimental to their color purity. By using first-principles multi-scale modeling that accurately captures the competition between polarization-charge screening, phase-space filling, and many-body plasma renormalization, we explain the current-dependent spectral characteristics of polar III-nitride LEDs fabricated with state-of-the-art quantum wells. Our analysis uncovers a fundamental connection between carrier dynamics and the injection-dependent spectral characteristics of light-emitting materials. For example, polar III-nitride LEDs offer poor control over their injection-dependent color purity due to their poor hole transport and slow carrier-recombination dynamics, which forces them to operate at or near degenerate carrier densities. Designs that accelerate carrier recombination and transport and reduce the carrier density required to operate LEDs at a given current density lessen their injection-dependent wavelength shift and linewidth broadening.},
doi = {10.1063/5.0134995},
journal = {AIP Advances},
number = 12,
volume = 12,
place = {United States},
year = {Wed Dec 21 00:00:00 EST 2022},
month = {Wed Dec 21 00:00:00 EST 2022}
}
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