Tuning of the electronic and vibrational properties of epitaxial MoS 2 through He-ion beam modification
Abstract
Abstract Atomically thin transition metal dichalcogenides (TMDs), like MoS 2 with high carrier mobilities and tunable electron dispersions, are unique active material candidates for next generation opto-electronic devices. Previous studies on ion irradiation show great potential applications when applied to two-dimensional (2D) materials, yet have been limited to micron size exfoliated flakes or smaller. To demonstrate the scalability of this method for industrial applications, we report the application of relatively low power (50 keV) 4 He + ion irradiation towards tuning the optoelectronic properties of an epitaxially grown continuous film of MoS 2 at the wafer scale, and demonstrate that precise manipulation of atomistic defects can be achieved in TMD films using ion implanters. The effect of 4 He + ion fluence on the PL and Raman signatures of the irradiated film provides new insights into the type and concentration of defects formed in the MoS 2 lattice, which are quantified through ion beam analysis. PL and Raman spectroscopy indicate that point defects are generated without causing disruption to the underlying lattice structure of the 2D films and hence, this technique can prove to be an effective way to achieve defect-mediated control over the opto-electronic properties of MoS 2 andmore »
- Publication Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Laboratory Directed Research and Development (LDRD) Program; National Science Foundation (NSF)
- OSTI Identifier:
- 1902184
- Alternate Identifier(s):
- OSTI ID: 1898699; OSTI ID: 1900500
- Report Number(s):
- LA-UR-22-27109
Journal ID: ISSN 0957-4484
- Grant/Contract Number:
- 89233218CNA000001; 20210036DR; 20210782ER; DMR-1539916; DMR-2039351
- Resource Type:
- Published Article
- Journal Name:
- Nanotechnology
- Additional Journal Information:
- Journal Name: Nanotechnology Journal Volume: 34 Journal Issue: 8; Journal ID: ISSN 0957-4484
- Publisher:
- IOP Publishing
- Country of Publication:
- United Kingdom
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; Material Science
Citation Formats
Parida, Shayani, Wang, Yongqiang, Zhao, Huan, Htoon, Han, Kucinski, Theresa Marie, Chubarov, Mikhail, Choudhury, Tanushree, Redwing, Joan Marie, Dongare, Avinash, and Pettes, Michael Thompson. Tuning of the electronic and vibrational properties of epitaxial MoS 2 through He-ion beam modification. United Kingdom: N. p., 2022.
Web. doi:10.1088/1361-6528/aca3af.
Parida, Shayani, Wang, Yongqiang, Zhao, Huan, Htoon, Han, Kucinski, Theresa Marie, Chubarov, Mikhail, Choudhury, Tanushree, Redwing, Joan Marie, Dongare, Avinash, & Pettes, Michael Thompson. Tuning of the electronic and vibrational properties of epitaxial MoS 2 through He-ion beam modification. United Kingdom. https://doi.org/10.1088/1361-6528/aca3af
Parida, Shayani, Wang, Yongqiang, Zhao, Huan, Htoon, Han, Kucinski, Theresa Marie, Chubarov, Mikhail, Choudhury, Tanushree, Redwing, Joan Marie, Dongare, Avinash, and Pettes, Michael Thompson. Wed .
"Tuning of the electronic and vibrational properties of epitaxial MoS 2 through He-ion beam modification". United Kingdom. https://doi.org/10.1088/1361-6528/aca3af.
@article{osti_1902184,
title = {Tuning of the electronic and vibrational properties of epitaxial MoS 2 through He-ion beam modification},
author = {Parida, Shayani and Wang, Yongqiang and Zhao, Huan and Htoon, Han and Kucinski, Theresa Marie and Chubarov, Mikhail and Choudhury, Tanushree and Redwing, Joan Marie and Dongare, Avinash and Pettes, Michael Thompson},
abstractNote = {Abstract Atomically thin transition metal dichalcogenides (TMDs), like MoS 2 with high carrier mobilities and tunable electron dispersions, are unique active material candidates for next generation opto-electronic devices. Previous studies on ion irradiation show great potential applications when applied to two-dimensional (2D) materials, yet have been limited to micron size exfoliated flakes or smaller. To demonstrate the scalability of this method for industrial applications, we report the application of relatively low power (50 keV) 4 He + ion irradiation towards tuning the optoelectronic properties of an epitaxially grown continuous film of MoS 2 at the wafer scale, and demonstrate that precise manipulation of atomistic defects can be achieved in TMD films using ion implanters. The effect of 4 He + ion fluence on the PL and Raman signatures of the irradiated film provides new insights into the type and concentration of defects formed in the MoS 2 lattice, which are quantified through ion beam analysis. PL and Raman spectroscopy indicate that point defects are generated without causing disruption to the underlying lattice structure of the 2D films and hence, this technique can prove to be an effective way to achieve defect-mediated control over the opto-electronic properties of MoS 2 and other 2D materials.},
doi = {10.1088/1361-6528/aca3af},
journal = {Nanotechnology},
number = 8,
volume = 34,
place = {United Kingdom},
year = {Wed Dec 07 00:00:00 EST 2022},
month = {Wed Dec 07 00:00:00 EST 2022}
}
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