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Title: Lithographically defined synthesis of transition metal dichalcogenides

Abstract

Abstract Transition metal dichalcogenides (TMDs) promise to revolutionize optoelectronic applications. While monolayer exfoliation and vapor phase growth produce extremely high quality 2D materials, direct fabrication at wafer scale remains a significant challenge. Here, we present a method that we call ‘lateral conversion’, which enables the synthesis of patterned TMD structures, with control over the thickness down to a few layers, at lithographically predefined locations. In this method, chemical conversion of a metal-oxide film to TMD layers proceeds by diffusion of precursor propagating laterally between silica layers, resulting in structures where delicate chalcogenide films are protected from contamination or oxidation. Lithographically patterned WS 2 structures were synthesized by lateral conversion and analyzed in detail by hyperspectral Raman imaging, scanning electron microscopy and transmission electron microscopy. The rate of conversion was investigated as a function of time, temperature, and thickness of the converted film. In addition, the process was extended to grow patterned MoS 2 , WSe 2 , MoSe 2 structures, and to demonstrate unique WS 2 /SiO 2 multilayer structures. We believe this method will be applicable to a variety of additional chalcogenide materials, and enable their incorporation into novel architectures and devices.

Authors:
ORCiD logo; ; ; ORCiD logo; ORCiD logo; ORCiD logo; ORCiD logo; ORCiD logo; ORCiD logo; ORCiD logo
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1567903
Resource Type:
Published Article
Journal Name:
2D Materials
Additional Journal Information:
Journal Name: 2D Materials Journal Volume: 6 Journal Issue: 4; Journal ID: ISSN 2053-1583
Publisher:
IOP Publishing
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Kemelbay, Aidar, Kuntubek, Aldiyar, Chang, Nicholas, Chen, Christopher T., Kastl, Christoph, Inglezakis, Vassilis J., Tikhonov, Alexander, Schwartzberg, Adam M., Aloni, Shaul, and Kuykendall, Tevye R. Lithographically defined synthesis of transition metal dichalcogenides. United Kingdom: N. p., 2019. Web. doi:10.1088/2053-1583/ab402a.
Kemelbay, Aidar, Kuntubek, Aldiyar, Chang, Nicholas, Chen, Christopher T., Kastl, Christoph, Inglezakis, Vassilis J., Tikhonov, Alexander, Schwartzberg, Adam M., Aloni, Shaul, & Kuykendall, Tevye R. Lithographically defined synthesis of transition metal dichalcogenides. United Kingdom. https://doi.org/10.1088/2053-1583/ab402a
Kemelbay, Aidar, Kuntubek, Aldiyar, Chang, Nicholas, Chen, Christopher T., Kastl, Christoph, Inglezakis, Vassilis J., Tikhonov, Alexander, Schwartzberg, Adam M., Aloni, Shaul, and Kuykendall, Tevye R. Mon . "Lithographically defined synthesis of transition metal dichalcogenides". United Kingdom. https://doi.org/10.1088/2053-1583/ab402a.
@article{osti_1567903,
title = {Lithographically defined synthesis of transition metal dichalcogenides},
author = {Kemelbay, Aidar and Kuntubek, Aldiyar and Chang, Nicholas and Chen, Christopher T. and Kastl, Christoph and Inglezakis, Vassilis J. and Tikhonov, Alexander and Schwartzberg, Adam M. and Aloni, Shaul and Kuykendall, Tevye R.},
abstractNote = {Abstract Transition metal dichalcogenides (TMDs) promise to revolutionize optoelectronic applications. While monolayer exfoliation and vapor phase growth produce extremely high quality 2D materials, direct fabrication at wafer scale remains a significant challenge. Here, we present a method that we call ‘lateral conversion’, which enables the synthesis of patterned TMD structures, with control over the thickness down to a few layers, at lithographically predefined locations. In this method, chemical conversion of a metal-oxide film to TMD layers proceeds by diffusion of precursor propagating laterally between silica layers, resulting in structures where delicate chalcogenide films are protected from contamination or oxidation. Lithographically patterned WS 2 structures were synthesized by lateral conversion and analyzed in detail by hyperspectral Raman imaging, scanning electron microscopy and transmission electron microscopy. The rate of conversion was investigated as a function of time, temperature, and thickness of the converted film. In addition, the process was extended to grow patterned MoS 2 , WSe 2 , MoSe 2 structures, and to demonstrate unique WS 2 /SiO 2 multilayer structures. We believe this method will be applicable to a variety of additional chalcogenide materials, and enable their incorporation into novel architectures and devices.},
doi = {10.1088/2053-1583/ab402a},
journal = {2D Materials},
number = 4,
volume = 6,
place = {United Kingdom},
year = {2019},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1088/2053-1583/ab402a

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Cited by: 2 works
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