Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: Enabling nanoscale direct write homo-junctions

Stanford, Michael; Noh, Joo Hyon; Koehler, Michael R.; Mandrus, David G.; Duscher, Gerd; Rondinone, Adam Justin; Ivanov, Ilia N.; Ward, Thomas Zac; Rack, Philip D.; Pudasaini, Pushpa Raj; Belianinov, Alex; Cross, Nicholas

doi:10.1038/srep27276

Title: Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe₂: Enabling nanoscale direct write homo-junctions

Abstract

Atomically thin transition metal dichalcogenides (TMDs) are currently receiving significant attention due to their promising opto-electronic properties. Tuning optical and electrical properties of mono and few-layer TMDs, such as tungsten diselenide (WSe₂), by controlling the defects, is an intriguing opportunity to synthesize next generation two dimensional material opto-electronic devices. Here, we report the effects of focused helium ion beam irradiation on the structural, optical and electrical properties of few-layer WSe₂, via high resolution scanning transmission electron microscopy, Raman spectroscopy, and electrical transport measurements. By controlling the ion irradiation dose, we selectively introduce precise defects in few-layer WSe₂ thereby locally tuning the resistivity and transport properties of the material. Hole transport in the few layer WSe₂ is degraded more severely relative to electron transport after helium ion irradiation. Moreover, by selectively exposing material with the ion beam, we demonstrate a simple yet highly tunable method to create lateral homo-junctions in few layer WSe₂ flakes, which constitutes an important advance towards two dimensional opto-electronic devices.

Authors:

Stanford, Michael ^[1]; Noh, Joo Hyon ^[1]; Koehler, Michael R. ^[1]; Mandrus, David G. ^[2]; Duscher, Gerd ^[2]; Rondinone, Adam Justin ^[3]; Ivanov, Ilia N. ^[3]; Ward, Thomas Zac ^[3]; Rack, Philip D. ^[4]; Pudasaini, Pushpa Raj ^[1]; Belianinov, Alex ^[3]; Cross, Nicholas ^[1]

Univ. of Tennessee, Knoxville, TN (United States)
Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)

Publication Date:: Mon Jun 06 00:00:00 EDT 2016

Research Org.:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Org.:: USDOE Office of Science (SC)

OSTI Identifier:: 1261537

Grant/Contract Number:: AC05-00OR22725

Resource Type:: Accepted Manuscript

Journal Name:: Scientific Reports

Additional Journal Information:: Journal Volume: 6; Journal Issue: 6; Journal ID: ISSN 2045-2322

Publisher:: Nature Publishing Group

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Stanford, Michael, Noh, Joo Hyon, Koehler, Michael R., Mandrus, David G., Duscher, Gerd, Rondinone, Adam Justin, Ivanov, Ilia N., Ward, Thomas Zac, Rack, Philip D., Pudasaini, Pushpa Raj, Belianinov, Alex, and Cross, Nicholas. Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: Enabling nanoscale direct write homo-junctions.  United States: N. p., 2016. 
Web.  doi:10.1038/srep27276.

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                    Stanford, Michael, Noh, Joo Hyon, Koehler, Michael R., Mandrus, David G., Duscher, Gerd, Rondinone, Adam Justin, Ivanov, Ilia N., Ward, Thomas Zac, Rack, Philip D., Pudasaini, Pushpa Raj, Belianinov, Alex, & Cross, Nicholas. Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: Enabling nanoscale direct write homo-junctions.  United States.  https://doi.org/10.1038/srep27276

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                    Stanford, Michael, Noh, Joo Hyon, Koehler, Michael R., Mandrus, David G., Duscher, Gerd, Rondinone, Adam Justin, Ivanov, Ilia N., Ward, Thomas Zac, Rack, Philip D., Pudasaini, Pushpa Raj, Belianinov, Alex, and Cross, Nicholas. Mon .  
"Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: Enabling nanoscale direct write homo-junctions".  United States.  https://doi.org/10.1038/srep27276.  https://www.osti.gov/servlets/purl/1261537.

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@article{osti_1261537,

  title        = {Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: Enabling nanoscale direct write homo-junctions},

  author       = {Stanford, Michael and Noh, Joo Hyon and Koehler, Michael R. and Mandrus, David G. and Duscher, Gerd and Rondinone, Adam Justin and Ivanov, Ilia N. and Ward, Thomas Zac and Rack, Philip D. and Pudasaini, Pushpa Raj and Belianinov, Alex and Cross, Nicholas},

  abstractNote = {Atomically thin transition metal dichalcogenides (TMDs) are currently receiving significant attention due to their promising opto-electronic properties. Tuning optical and electrical properties of mono and few-layer TMDs, such as tungsten diselenide (WSe2), by controlling the defects, is an intriguing opportunity to synthesize next generation two dimensional material opto-electronic devices. Here, we report the effects of focused helium ion beam irradiation on the structural, optical and electrical properties of few-layer WSe2, via high resolution scanning transmission electron microscopy, Raman spectroscopy, and electrical transport measurements. By controlling the ion irradiation dose, we selectively introduce precise defects in few-layer WSe2 thereby locally tuning the resistivity and transport properties of the material. Hole transport in the few layer WSe2 is degraded more severely relative to electron transport after helium ion irradiation. Moreover, by selectively exposing material with the ion beam, we demonstrate a simple yet highly tunable method to create lateral homo-junctions in few layer WSe2 flakes, which constitutes an important advance towards two dimensional opto-electronic devices.},

  doi          = {10.1038/srep27276},

  journal      = {Scientific Reports},

  number       = 6,

  volume       = 6,

  place        = {United States},

  year         = {Mon Jun 06 00:00:00 EDT 2016},

  month        = {Mon Jun 06 00:00:00 EDT 2016}

}

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Title: Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: Enabling nanoscale direct write homo-junctions

Abstract

Citation Formats

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides journal, November 2012

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets journal, April 2013

Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides journal, March 2013

Optical properties of mixed transition metal dichalcogenide crystals journal, December 1989

Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors journal, March 2015

Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions journal, March 2014

Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide journal, March 2014

Solar-energy conversion and light emission in an atomic monolayer p–n diode journal, March 2014

Large-Area Synthesis of Highly Crystalline WSe 2 Monolayers and Device Applications journal, December 2013

Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface journal, July 2015

Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors journal, July 2015

Irradiation Effects of High-Energy Proton Beams on MoS 2 Field Effect Transistors journal, February 2014

Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons journal, September 2013

Nanopatterning and Electrical Tuning of MoS 2 Layers with a Subnanometer Helium Ion Beam journal, July 2015

Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide journal, March 2015

Lateral MoS 2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics journal, August 2014

Atomically thin p–n junctions with van der Waals heterointerfaces journal, August 2014

Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions journal, September 2014

Raman and resonance Raman investigation of MoS 2 nanoparticles journal, July 1999

Excited Excitonic States in 1L, 2L, 3L, and Bulk WSe 2 Observed by Resonant Raman Spectroscopy journal, August 2014

Raman study of damage extent in graphene nanostructures carved by high energy helium ion beam journal, June 2014

Maskless Lithography and in situ Visualization of Conductivity of Graphene using Helium Ion Microscopy journal, July 2015

High Mobility WSe 2 p - and n - Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts journal, May 2014

Electron and Hole Mobilities in Single-Layer WSe 2 journal, June 2014

Hopping transport through defect-induced localized states in molybdenum disulphide journal, October 2013

Atomic Healing of Defects in Transition Metal Dichalcogenides journal, April 2015

Thermal Oxidation of WSe 2 Nanosheets Adhered on SiO 2 /Si Substrates journal, July 2015

Solar-energy conversion and light emission in an atomic monolayer p-n diode text, January 2013

Thermal Oxidation of WSe2 Nano-sheets Adhered on SiO2/Si Substrates text, January 2015

Nanopatterning and Electrical Tuning of MoS 2 Layers with a Subnanometer Helium Ion Beam journal, July 2015

Thermal Oxidation of WSe 2 Nanosheets Adhered on SiO 2 /Si Substrates journal, July 2015

High Mobility WSe 2 p - and n - Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts journal, May 2014

Large-Area Synthesis of Highly Crystalline WSe 2 Monolayers and Device Applications journal, December 2013

Excited Excitonic States in 1L, 2L, 3L, and Bulk WSe 2 Observed by Resonant Raman Spectroscopy journal, August 2014

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets journal, April 2013

Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide journal, March 2015

Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors journal, July 2015

Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions journal, September 2014

Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides journal, March 2013

Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons journal, September 2013

Maskless Lithography and in situ Visualization of Conductivity of Graphene using Helium Ion Microscopy journal, July 2015

Electron and Hole Mobilities in Single-Layer WSe2 text, January 2014

Nonvolatile and Programmable Photodoping in MoTe 2 for Photoresist‐Free Complementary Electronic Devices journal, November 2018

High-performance multilayer WSe2 field-effect transistors with carrier type control journal, July 2017

Emerging nanofabrication and quantum confinement techniques for 2D materials beyond graphene journal, July 2018

Exploring the air stability of PdSe2 via electrical transport measurements and defect calculations journal, December 2019

Monte Carlo simulation of nanoscale material focused ion beam gas-assisted etching: Ga + and Ne + etching of SiO 2 in the presence of a XeF 2 precursor gas journal, January 2019

Electrical and geometrical tuning of MoS 2 field effect transistors via direct nanopatterning journal, January 2019

Dose-dependent effect of proton irradiation on electrical properties of WSe 2 ambipolar field effect transistors journal, January 2019

Ion beam modification of two-dimensional materials: Characterization, properties, and applications journal, March 2017

Suppression of the shear Raman mode in defective bilayer MoS 2 journal, February 2019

Defect-moderated oxidative etching of MoS 2 journal, October 2019

High performance top-gated multilayer WSe 2 field effect transistors journal, October 2017

Focused-helium-ion-beam blow forming of nanostructures: radiation damage and nanofabrication journal, October 2019

Two-dimensional MoS 2 under ion irradiation: from controlled defect production to electronic structure engineering journal, April 2017

Robust valley polarization of helium ion modified atomically thin MoS 2 journal, November 2017

Convergent ion beam alteration of 2D materials and metal-2D interfaces journal, June 2019

Reversible crystalline-to-amorphous phase transformation in monolayer MoS 2 under grazing ion irradiation journal, January 2020

Pulsed Laser-Assisted Helium Ion Nanomachining of Monolayer Graphene—Direct-Write Kirigami Patterns journal, September 2019

Suppression of the Shear Raman Mode in Defective Bilayer MoS2 text, January 2018

Chemical Changes in Layered Ferroelectric Semiconductors Induced by Helium Ion Beam journal, November 2017

Nanoforging Single Layer MoSe2 Through Defect Engineering with Focused Helium Ion Beams journal, August 2016

Title: Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe₂: Enabling nanoscale direct write homo-junctions

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
journal, November 2012

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
journal, April 2013

Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides
journal, March 2013

Optical properties of mixed transition metal dichalcogenide crystals
journal, December 1989

Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors
journal, March 2015

Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions
journal, March 2014

Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
journal, March 2014

Solar-energy conversion and light emission in an atomic monolayer p–n diode
journal, March 2014

Large-Area Synthesis of Highly Crystalline WSe ₂ Monolayers and Device Applications
journal, December 2013

Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface
journal, July 2015

Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors
journal, July 2015

Irradiation Effects of High-Energy Proton Beams on MoS ₂ Field Effect Transistors
journal, February 2014

Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons
journal, September 2013

Nanopatterning and Electrical Tuning of MoS ₂ Layers with a Subnanometer Helium Ion Beam
journal, July 2015

Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide
journal, March 2015

Lateral MoS ₂ p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics
journal, August 2014

Atomically thin p–n junctions with van der Waals heterointerfaces
journal, August 2014

Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions
journal, September 2014

Raman and resonance Raman investigation of ${MoS}_{2}$ nanoparticles
journal, July 1999

Excited Excitonic States in 1L, 2L, 3L, and Bulk WSe ₂ Observed by Resonant Raman Spectroscopy
journal, August 2014

Raman study of damage extent in graphene nanostructures carved by high energy helium ion beam
journal, June 2014

Maskless Lithography and in situ Visualization of Conductivity of Graphene using Helium Ion Microscopy
journal, July 2015

High Mobility WSe ₂ p - and n - Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
journal, May 2014

Electron and Hole Mobilities in Single-Layer WSe ₂
journal, June 2014

Hopping transport through defect-induced localized states in molybdenum disulphide
journal, October 2013

Atomic Healing of Defects in Transition Metal Dichalcogenides
journal, April 2015

Thermal Oxidation of WSe ₂ Nanosheets Adhered on SiO ₂ /Si Substrates
journal, July 2015

Solar-energy conversion and light emission in an atomic monolayer p-n diode
text, January 2013

Thermal Oxidation of WSe2 Nano-sheets Adhered on SiO2/Si Substrates
text, January 2015

Nanopatterning and Electrical Tuning of MoS ₂ Layers with a Subnanometer Helium Ion Beam
journal, July 2015

Thermal Oxidation of WSe ₂ Nanosheets Adhered on SiO ₂ /Si Substrates
journal, July 2015

High Mobility WSe ₂ p - and n - Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
journal, May 2014

Large-Area Synthesis of Highly Crystalline WSe ₂ Monolayers and Device Applications
journal, December 2013

Excited Excitonic States in 1L, 2L, 3L, and Bulk WSe ₂ Observed by Resonant Raman Spectroscopy
journal, August 2014

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
journal, April 2013

Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide
journal, March 2015

Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors
journal, July 2015

Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions
journal, September 2014

Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides
journal, March 2013

Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons
journal, September 2013

Maskless Lithography and in situ Visualization of Conductivity of Graphene using Helium Ion Microscopy
journal, July 2015

Electron and Hole Mobilities in Single-Layer WSe2
text, January 2014

Nonvolatile and Programmable Photodoping in MoTe ₂ for Photoresist‐Free Complementary Electronic Devices
journal, November 2018

High-performance multilayer WSe2 field-effect transistors with carrier type control
journal, July 2017

Emerging nanofabrication and quantum confinement techniques for 2D materials beyond graphene
journal, July 2018

Exploring the air stability of PdSe2 via electrical transport measurements and defect calculations
journal, December 2019

Monte Carlo simulation of nanoscale material focused ion beam gas-assisted etching: Ga ⁺ and Ne ⁺ etching of SiO ₂ in the presence of a XeF ₂ precursor gas
journal, January 2019

Electrical and geometrical tuning of MoS ₂ field effect transistors via direct nanopatterning
journal, January 2019

Dose-dependent effect of proton irradiation on electrical properties of WSe ₂ ambipolar field effect transistors
journal, January 2019

Ion beam modification of two-dimensional materials: Characterization, properties, and applications
journal, March 2017

Suppression of the shear Raman mode in defective bilayer MoS 2
journal, February 2019

Defect-moderated oxidative etching of MoS ₂
journal, October 2019

High performance top-gated multilayer WSe ₂ field effect transistors
journal, October 2017

Focused-helium-ion-beam blow forming of nanostructures: radiation damage and nanofabrication
journal, October 2019

Two-dimensional MoS ₂ under ion irradiation: from controlled defect production to electronic structure engineering
journal, April 2017

Robust valley polarization of helium ion modified atomically thin MoS ₂
journal, November 2017

Convergent ion beam alteration of 2D materials and metal-2D interfaces
journal, June 2019

Reversible crystalline-to-amorphous phase transformation in monolayer MoS ₂ under grazing ion irradiation
journal, January 2020

Pulsed Laser-Assisted Helium Ion Nanomachining of Monolayer Graphene—Direct-Write Kirigami Patterns
journal, September 2019

Suppression of the Shear Raman Mode in Defective Bilayer MoS2
text, January 2018

Chemical Changes in Layered Ferroelectric Semiconductors Induced by Helium Ion Beam
journal, November 2017

Nanoforging Single Layer MoSe2 Through Defect Engineering with Focused Helium Ion Beams
journal, August 2016