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Title: Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: Enabling nanoscale direct write homo-junctions

Abstract

Atomically thin transition metal dichalcogenides (TMDs) are currently receiving significant attention due to their promising opto-electronic properties. Tuning optical and electrical properties of mono and few-layer TMDs, such as tungsten diselenide (WSe2), by controlling the defects, is an intriguing opportunity to synthesize next generation two dimensional material opto-electronic devices. Here, we report the effects of focused helium ion beam irradiation on the structural, optical and electrical properties of few-layer WSe2, via high resolution scanning transmission electron microscopy, Raman spectroscopy, and electrical transport measurements. By controlling the ion irradiation dose, we selectively introduce precise defects in few-layer WSe2 thereby locally tuning the resistivity and transport properties of the material. Hole transport in the few layer WSe2 is degraded more severely relative to electron transport after helium ion irradiation. Moreover, by selectively exposing material with the ion beam, we demonstrate a simple yet highly tunable method to create lateral homo-junctions in few layer WSe2 flakes, which constitutes an important advance towards two dimensional opto-electronic devices.

Authors:
 [1];  [1];  [1];  [2];  [2];  [3];  [3];  [3];  [4];  [1];  [3];  [1]
  1. Univ. of Tennessee, Knoxville, TN (United States)
  2. Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1261537
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal Issue: 6; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Stanford, Michael, Noh, Joo Hyon, Koehler, Michael R., Mandrus, David G., Duscher, Gerd, Rondinone, Adam Justin, Ivanov, Ilia N., Ward, Thomas Zac, Rack, Philip D., Pudasaini, Pushpa Raj, Belianinov, Alex, and Cross, Nicholas. Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: Enabling nanoscale direct write homo-junctions. United States: N. p., 2016. Web. doi:10.1038/srep27276.
Stanford, Michael, Noh, Joo Hyon, Koehler, Michael R., Mandrus, David G., Duscher, Gerd, Rondinone, Adam Justin, Ivanov, Ilia N., Ward, Thomas Zac, Rack, Philip D., Pudasaini, Pushpa Raj, Belianinov, Alex, & Cross, Nicholas. Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: Enabling nanoscale direct write homo-junctions. United States. doi:10.1038/srep27276.
Stanford, Michael, Noh, Joo Hyon, Koehler, Michael R., Mandrus, David G., Duscher, Gerd, Rondinone, Adam Justin, Ivanov, Ilia N., Ward, Thomas Zac, Rack, Philip D., Pudasaini, Pushpa Raj, Belianinov, Alex, and Cross, Nicholas. Mon . "Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: Enabling nanoscale direct write homo-junctions". United States. doi:10.1038/srep27276. https://www.osti.gov/servlets/purl/1261537.
@article{osti_1261537,
title = {Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: Enabling nanoscale direct write homo-junctions},
author = {Stanford, Michael and Noh, Joo Hyon and Koehler, Michael R. and Mandrus, David G. and Duscher, Gerd and Rondinone, Adam Justin and Ivanov, Ilia N. and Ward, Thomas Zac and Rack, Philip D. and Pudasaini, Pushpa Raj and Belianinov, Alex and Cross, Nicholas},
abstractNote = {Atomically thin transition metal dichalcogenides (TMDs) are currently receiving significant attention due to their promising opto-electronic properties. Tuning optical and electrical properties of mono and few-layer TMDs, such as tungsten diselenide (WSe2), by controlling the defects, is an intriguing opportunity to synthesize next generation two dimensional material opto-electronic devices. Here, we report the effects of focused helium ion beam irradiation on the structural, optical and electrical properties of few-layer WSe2, via high resolution scanning transmission electron microscopy, Raman spectroscopy, and electrical transport measurements. By controlling the ion irradiation dose, we selectively introduce precise defects in few-layer WSe2 thereby locally tuning the resistivity and transport properties of the material. Hole transport in the few layer WSe2 is degraded more severely relative to electron transport after helium ion irradiation. Moreover, by selectively exposing material with the ion beam, we demonstrate a simple yet highly tunable method to create lateral homo-junctions in few layer WSe2 flakes, which constitutes an important advance towards two dimensional opto-electronic devices.},
doi = {10.1038/srep27276},
journal = {Scientific Reports},
number = 6,
volume = 6,
place = {United States},
year = {2016},
month = {6}
}

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    Works referencing / citing this record:

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