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Title: Tuning Electronic Structure of Single Layer MoS 2 through Defect and Interface Engineering

Abstract

Not provided.

Authors:
ORCiD logo;  [1]; ; ORCiD logo;  [2];  [3]; ORCiD logo [4];  [2]; ; ORCiD logo;
  1. Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
  2. State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, P. R. China
  3. Department of Chemistry, Division of Materials Science and Engineering, and The Photonics Center, Boston University, Boston, Massachusetts 02215, United States
  4. School of Advanced Materials, Shenzhen Graduate School, Peking University, Shenzhen 518055, P. R. China
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Excitonics (CE). Solid-State Solar-Thermal Energy Conversion Center (S3TEC); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1539576
Grant/Contract Number:  
SC0001088; SC0001299; SC0002633
Resource Type:
Accepted Manuscript
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 12; Journal Issue: 3; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
Chemistry; Science & Technology - Other Topics; Materials Science

Citation Formats

Chen, Yan, Huang, Shengxi, Ji, Xiang, Adepalli, Kiran, Yin, Kedi, Ling, Xi, Wang, Xinwei, Xue, Jianmin, Dresselhaus, Mildred, Kong, Jing, and Yildiz, Bilge. Tuning Electronic Structure of Single Layer MoS 2 through Defect and Interface Engineering. United States: N. p., 2018. Web. doi:10.1021/acsnano.7b08418.
Chen, Yan, Huang, Shengxi, Ji, Xiang, Adepalli, Kiran, Yin, Kedi, Ling, Xi, Wang, Xinwei, Xue, Jianmin, Dresselhaus, Mildred, Kong, Jing, & Yildiz, Bilge. Tuning Electronic Structure of Single Layer MoS 2 through Defect and Interface Engineering. United States. doi:10.1021/acsnano.7b08418.
Chen, Yan, Huang, Shengxi, Ji, Xiang, Adepalli, Kiran, Yin, Kedi, Ling, Xi, Wang, Xinwei, Xue, Jianmin, Dresselhaus, Mildred, Kong, Jing, and Yildiz, Bilge. Sat . "Tuning Electronic Structure of Single Layer MoS 2 through Defect and Interface Engineering". United States. doi:10.1021/acsnano.7b08418. https://www.osti.gov/servlets/purl/1539576.
@article{osti_1539576,
title = {Tuning Electronic Structure of Single Layer MoS 2 through Defect and Interface Engineering},
author = {Chen, Yan and Huang, Shengxi and Ji, Xiang and Adepalli, Kiran and Yin, Kedi and Ling, Xi and Wang, Xinwei and Xue, Jianmin and Dresselhaus, Mildred and Kong, Jing and Yildiz, Bilge},
abstractNote = {Not provided.},
doi = {10.1021/acsnano.7b08418},
journal = {ACS Nano},
number = 3,
volume = 12,
place = {United States},
year = {2018},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 21 works
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