Growth Optimization and Device Integration of Narrow‐Bandgap Graphene Nanoribbons
Abstract
Abstract The electronic, optical, and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom‐up fabrication based on molecular precursors. This approach offers a unique platform for all‐carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, the growth, characterization, and device integration of 5‐atom wide armchair GNRs (5‐AGNRs) are studied, which are expected to have an optimal bandgap as active material in switching devices. 5‐AGNRs are obtained via on‐surface synthesis under ultrahigh vacuum conditions from Br‐ and I‐substituted precursors. It is shown that the use of I‐substituted precursors and the optimization of the initial precursor coverage quintupled the average 5‐AGNR length. This significant length increase allowed the integration of 5‐AGNRs into devices and the realization of the first field‐effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. The study highlights that the optimized growth protocols can successfully bridge between the sub‐nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integrationmore »
- Authors:
-
more »
- Empa Swiss Federal Laboratories for Materials Science and Technology Dübendorf 8600 Switzerland
- State Key Laboratory of Elemento‐Organic Chemistry College of Chemistry Nankai University Tianjin 300071 China
- Department of Electrical Engineering and Computer Sciences University of California Berkeley CA 94720 USA
- Institute of Theoretical Physics University of Regensburg D‐93053 Regensburg Germany
- Department of Physics Applied Physics and Astronomy Rensselaer Polytechnic Institute Troy NY 12180 USA
- Center for Advancing Electronics Dresden Department of Chemistry and Food Chemistry TU Dresden 01062 Dresden Germany
- Max Planck Institute for Polymer Research 55128 Mainz Germany, Department of Chemistry Johannes Gutenberg‐Universität Mainz 55128 Mainz Germany
- Max Planck Institute for Polymer Research 55128 Mainz Germany, Organic and Carbon Nanomaterials Unit Okinawa Institute of Science and Technology Graduate University 1919‐1 Tancha Onna‐son Okinawa 904‐0495 Japan
- Empa Swiss Federal Laboratories for Materials Science and Technology Dübendorf 8600 Switzerland, Department of Chemistry Biochemistry and Pharmaceutical Sciences University of Bern Bern 3012 Switzerland
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Molecular Foundry
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1872797
- Alternate Identifier(s):
- OSTI ID: 1872798; OSTI ID: 1981444
- Grant/Contract Number:
- DE‐AC02‐05CH11231; AC02-05CH11231
- Resource Type:
- Published Article
- Journal Name:
- Small
- Additional Journal Information:
- Journal Name: Small Journal Volume: 18 Journal Issue: 31; Journal ID: ISSN 1613-6810
- Publisher:
- Wiley Blackwell (John Wiley & Sons)
- Country of Publication:
- Germany
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; field-effect transistors; graphene nanoribbons; on-surface synthesis; Raman spectroscopy; scanning tunneling microscopy; temperature-programmed x-ray photoelectron spectroscopy
Citation Formats
Borin Barin, Gabriela, Sun, Qiang, Di Giovannantonio, Marco, Du, Cheng‐Zhuo, Wang, Xiao‐Ye, Llinas, Juan Pablo, Mutlu, Zafer, Lin, Yuxuan, Wilhelm, Jan, Overbeck, Jan, Daniels, Colin, Lamparski, Michael, Sahabudeen, Hafeesudeen, Perrin, Mickael L., Urgel, José I., Mishra, Shantanu, Kinikar, Amogh, Widmer, Roland, Stolz, Samuel, Bommert, Max, Pignedoli, Carlo, Feng, Xinliang, Calame, Michel, Müllen, Klaus, Narita, Akimitsu, Meunier, Vincent, Bokor, Jeffrey, Fasel, Roman, and Ruffieux, Pascal. Growth Optimization and Device Integration of Narrow‐Bandgap Graphene Nanoribbons. Germany: N. p., 2022.
Web. doi:10.1002/smll.202202301.
Borin Barin, Gabriela, Sun, Qiang, Di Giovannantonio, Marco, Du, Cheng‐Zhuo, Wang, Xiao‐Ye, Llinas, Juan Pablo, Mutlu, Zafer, Lin, Yuxuan, Wilhelm, Jan, Overbeck, Jan, Daniels, Colin, Lamparski, Michael, Sahabudeen, Hafeesudeen, Perrin, Mickael L., Urgel, José I., Mishra, Shantanu, Kinikar, Amogh, Widmer, Roland, Stolz, Samuel, Bommert, Max, Pignedoli, Carlo, Feng, Xinliang, Calame, Michel, Müllen, Klaus, Narita, Akimitsu, Meunier, Vincent, Bokor, Jeffrey, Fasel, Roman, & Ruffieux, Pascal. Growth Optimization and Device Integration of Narrow‐Bandgap Graphene Nanoribbons. Germany. https://doi.org/10.1002/smll.202202301
Borin Barin, Gabriela, Sun, Qiang, Di Giovannantonio, Marco, Du, Cheng‐Zhuo, Wang, Xiao‐Ye, Llinas, Juan Pablo, Mutlu, Zafer, Lin, Yuxuan, Wilhelm, Jan, Overbeck, Jan, Daniels, Colin, Lamparski, Michael, Sahabudeen, Hafeesudeen, Perrin, Mickael L., Urgel, José I., Mishra, Shantanu, Kinikar, Amogh, Widmer, Roland, Stolz, Samuel, Bommert, Max, Pignedoli, Carlo, Feng, Xinliang, Calame, Michel, Müllen, Klaus, Narita, Akimitsu, Meunier, Vincent, Bokor, Jeffrey, Fasel, Roman, and Ruffieux, Pascal. Fri .
"Growth Optimization and Device Integration of Narrow‐Bandgap Graphene Nanoribbons". Germany. https://doi.org/10.1002/smll.202202301.
@article{osti_1872797,
title = {Growth Optimization and Device Integration of Narrow‐Bandgap Graphene Nanoribbons},
author = {Borin Barin, Gabriela and Sun, Qiang and Di Giovannantonio, Marco and Du, Cheng‐Zhuo and Wang, Xiao‐Ye and Llinas, Juan Pablo and Mutlu, Zafer and Lin, Yuxuan and Wilhelm, Jan and Overbeck, Jan and Daniels, Colin and Lamparski, Michael and Sahabudeen, Hafeesudeen and Perrin, Mickael L. and Urgel, José I. and Mishra, Shantanu and Kinikar, Amogh and Widmer, Roland and Stolz, Samuel and Bommert, Max and Pignedoli, Carlo and Feng, Xinliang and Calame, Michel and Müllen, Klaus and Narita, Akimitsu and Meunier, Vincent and Bokor, Jeffrey and Fasel, Roman and Ruffieux, Pascal},
abstractNote = {Abstract The electronic, optical, and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom‐up fabrication based on molecular precursors. This approach offers a unique platform for all‐carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, the growth, characterization, and device integration of 5‐atom wide armchair GNRs (5‐AGNRs) are studied, which are expected to have an optimal bandgap as active material in switching devices. 5‐AGNRs are obtained via on‐surface synthesis under ultrahigh vacuum conditions from Br‐ and I‐substituted precursors. It is shown that the use of I‐substituted precursors and the optimization of the initial precursor coverage quintupled the average 5‐AGNR length. This significant length increase allowed the integration of 5‐AGNRs into devices and the realization of the first field‐effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. The study highlights that the optimized growth protocols can successfully bridge between the sub‐nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs.},
doi = {10.1002/smll.202202301},
journal = {Small},
number = 31,
volume = 18,
place = {Germany},
year = {Fri Jun 17 00:00:00 EDT 2022},
month = {Fri Jun 17 00:00:00 EDT 2022}
}
https://doi.org/10.1002/smll.202202301
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