Intrinsic Photoconductivity of few-layered ZrS2 Phototransistors via Multiterminal Measurements

Tanthirige, Rukshan M.; Garcia, Carlos; Ghosh, Saikat; Jackson II, Frederick; Nash, Jawnaye; Rosenmann, Daniel; Divan, Ralu; Stan, Liliana; Sumant, Anirudha V.; McGill, Stephen A.; Ray, Paresh C.; Pradhan, Nihar R.

doi:10.30564/ssid.v1i2.1526

Title: Intrinsic Photoconductivity of few-layered ZrS₂ Phototransistors via Multiterminal Measurements

Abstract

We report intrinsic photoconductivity studies on one of the least examined layered compounds, ZrS₂.Few-atomic layer ZrS₂ field-effect transistors were fabricated on the Si/SiO₂ substrate and photoconductivity measurements were performed using both two- and four-terminal configurations under the illumination of 532 nm laser source. We measured photocurrent as a function of the incident optical power at several source-drain (bias) voltages. We observe a significantly large photoconductivity when measured in the multiterminal (four-terminal) configuration compared to that in the two-terminal configuration. For an incident optical power of 90 nW, the estimated photosensitivity and the external quantum efficiency (EQE) measured in two-terminal configuration are 0.5 A/W and 120%, respectively, under a bias voltage of 650 mV. Under the same conditions, the four-terminal measurements result in much higher values for both the photoresponsivity (R) and EQE to 6 A/W and 1400%, respectively. This significant improvement in photoresponsivity and EQE in the four-terminal configuration may have been influenced by the reduction of contact resistance at the metal-semiconductor interface, which greatly impacts the carrier mobility of low conducting materials. This suggests that photoconductivity measurements performed through the two-terminal configuration in previous studies on ZrS₂ and other 2D materials have severely underestimated the true intrinsic properties of transition metal dichalcogenidesmore »« less

Authors:

Tanthirige, Rukshan M. ^[1]; Garcia, Carlos ^[2]; Ghosh, Saikat ^[3]; Jackson II, Frederick ^[1]; Nash, Jawnaye ^[1]; Rosenmann, Daniel ^[4]; Divan, Ralu ^[4]; Stan, Liliana ^[4]; Sumant, Anirudha V. ^[4]; McGill, Stephen A. ^[2]; Ray, Paresh C. ^[1]; Pradhan, Nihar R. ^[5]

Jackson State Univ., Jackson, MS (United States)
Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
Kunming Univ. of Science and Technology (China)
Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
Jackson State Univ., Jackson, MS (United States); Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)

Publication Date:: 2020-03-08

Research Org.:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division

OSTI Identifier:: 1630310

Grant/Contract Number:: AC02-06CH11357

Resource Type:: Accepted Manuscript

Journal Name:: Semiconductor Science and Information Devices

Additional Journal Information:: Journal Volume: 1; Journal Issue: 2; Journal ID: ISSN 2661-3212

Publisher:: Bilingual Publishing Co.

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; Field-effect transistors; Phototransistor; Quantum efficiency; Responsivity; Zirconium sulphide

Citation Formats


                    Tanthirige, Rukshan M., Garcia, Carlos, Ghosh, Saikat, Jackson II, Frederick, Nash, Jawnaye, Rosenmann, Daniel, Divan, Ralu, Stan, Liliana, Sumant, Anirudha V., McGill, Stephen A., Ray, Paresh C., and Pradhan, Nihar R. Intrinsic Photoconductivity of few-layered ZrS2 Phototransistors via Multiterminal Measurements.  United States: N. p., 2020. 
Web.  doi:10.30564/ssid.v1i2.1526.

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                    Tanthirige, Rukshan M., Garcia, Carlos, Ghosh, Saikat, Jackson II, Frederick, Nash, Jawnaye, Rosenmann, Daniel, Divan, Ralu, Stan, Liliana, Sumant, Anirudha V., McGill, Stephen A., Ray, Paresh C., & Pradhan, Nihar R. Intrinsic Photoconductivity of few-layered ZrS2 Phototransistors via Multiterminal Measurements.  United States.  https://doi.org/10.30564/ssid.v1i2.1526

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                    Tanthirige, Rukshan M., Garcia, Carlos, Ghosh, Saikat, Jackson II, Frederick, Nash, Jawnaye, Rosenmann, Daniel, Divan, Ralu, Stan, Liliana, Sumant, Anirudha V., McGill, Stephen A., Ray, Paresh C., and Pradhan, Nihar R. Sun .  
"Intrinsic Photoconductivity of few-layered ZrS2 Phototransistors via Multiterminal Measurements".  United States.  https://doi.org/10.30564/ssid.v1i2.1526.  https://www.osti.gov/servlets/purl/1630310.

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@article{osti_1630310,

  title        = {Intrinsic Photoconductivity of few-layered ZrS2 Phototransistors via Multiterminal Measurements},

  author       = {Tanthirige, Rukshan M. and Garcia, Carlos and Ghosh, Saikat and Jackson II, Frederick and Nash, Jawnaye and Rosenmann, Daniel and Divan, Ralu and Stan, Liliana and Sumant, Anirudha V. and McGill, Stephen A. and Ray, Paresh C. and Pradhan, Nihar R.},

  abstractNote = {We report intrinsic photoconductivity studies on one of the least examined layered compounds, ZrS2.Few-atomic layer ZrS2 field-effect transistors were fabricated on the Si/SiO2 substrate and photoconductivity measurements were performed using both two- and four-terminal configurations under the illumination of 532 nm laser source. We measured photocurrent as a function of the incident optical power at several source-drain (bias) voltages. We observe a significantly large photoconductivity when measured in the multiterminal (four-terminal) configuration compared to that in the two-terminal configuration. For an incident optical power of 90 nW, the estimated photosensitivity and the external quantum efficiency (EQE) measured in two-terminal configuration are 0.5 A/W and 120%, respectively, under a bias voltage of 650 mV. Under the same conditions, the four-terminal measurements result in much higher values for both the photoresponsivity (R) and EQE to 6 A/W and 1400%, respectively. This significant improvement in photoresponsivity and EQE   in the four-terminal configuration may have been influenced by the reduction of contact resistance at the metal-semiconductor interface, which greatly impacts the carrier mobility of low conducting materials. This suggests that photoconductivity measurements performed through the two-terminal configuration in previous studies on ZrS2 and other 2D materials have severely underestimated the true intrinsic properties of transition metal dichalcogenides and their remarkable potential for optoelectronic applications.},

  doi          = {10.30564/ssid.v1i2.1526},

  journal      = {Semiconductor Science and Information Devices},

  number       = 2,

  volume       = 1,

  place        = {United States},

  year         = {2020},

  month        = {3}

}

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Figure 1: (a) Thickness dependent Raman spectrum of ZrS₂ crystals on Si/SiO₂ substrate. The Raman modes A_1g and E_g are labeled. (b)-(d) are the optical micrograph images of exfoliated ZrS₂ crystals showing single layer to few atomic layers of flakes

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Title: Intrinsic Photoconductivity of few-layered ZrS2 Phototransistors via Multiterminal Measurements

Abstract

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Title: Intrinsic Photoconductivity of few-layered ZrS₂ Phototransistors via Multiterminal Measurements