Photogating-driven enhanced responsivity in a few-layered ReSe2 phototransistor
Abstract
A wide variety of two-dimensional (2D) metal dichalcogenide compounds have recently attracted much research interest due to their very high photoresponsivities (R) making them excellent candidates for optoelectronic applications. High R in 2D photoconductors is associated with trap state dynamics leading to a photogating effect, which is often manifested by a fractional power dependence (γ) of the photocurrent (Iph) at an effective illumination intensity (Peff). Furthermore, we present photoconductivity studies as a function of gate voltages, over a wide temperature range (20 K to 300 K) of field-effect transistors fabricated using thin layers of mechanically exfoliated Rhenium Diselenide (ReSe2). We obtain very high responsivities R ~ 16500 A/W and external quantum efficiency (EQE) ~ 3.2 × 106% (at 140 K, Vg = 60 V and Peff = 0.2 nW). A strong correlation between R and γ was established by investigating the dependence of these two quantities at various gate voltages and over a wide range of temperatures. Such correlations indicate the importance of trap state mediated photogating and its role in promoting high photo-responsivities in these materials. We believe such correlations can offer valuable insights for the design and development of high-performance photoactive devices using 2D materials.
- Authors:
-
- Southern Illinois Univ., Carbondale, IL (United States)
- Southern Illinois Univ., Carbondale, IL (United States); Great Basin College, Elko, NV (United States)
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Argonne National Lab. (ANL), Argonne, IL (United States); Univ. of Chicago, IL (United States)
- Jackson State Univ., Jackson, MS (United States)
- National High Magnetic Field Lab., Tallahassee, FL (United States)
- Argonne National Lab. (ANL), Argonne, IL (United States); Jackson State Univ., Jackson, MS (United States); National High Magnetic Field Lab., Tallahassee, FL (United States)
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1839982
- Alternate Identifier(s):
- OSTI ID: 1812403
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Materials Chemistry C
- Additional Journal Information:
- Journal Volume: 9; Journal Issue: 36; Journal ID: ISSN 2050-7526
- Publisher:
- Royal Society of Chemistry
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Patil, Prasanna D., Wasala, Milinda, Alkhaldi, Rana, Weber, Lincoln, Kovi, Kiran Kumar, Chakrabarti, Bhaswar, Nash, Jawnaye A., Rhodes, Daniel, Rosenmann, Daniel, Divan, Ralu, Sumant, Anirudha V., Balicas, Luis, Pradhan, Nihar R., and Talapatra, Saikat. Photogating-driven enhanced responsivity in a few-layered ReSe2 phototransistor. United States: N. p., 2021.
Web. doi:10.1039/d1tc01973b.
Patil, Prasanna D., Wasala, Milinda, Alkhaldi, Rana, Weber, Lincoln, Kovi, Kiran Kumar, Chakrabarti, Bhaswar, Nash, Jawnaye A., Rhodes, Daniel, Rosenmann, Daniel, Divan, Ralu, Sumant, Anirudha V., Balicas, Luis, Pradhan, Nihar R., & Talapatra, Saikat. Photogating-driven enhanced responsivity in a few-layered ReSe2 phototransistor. United States. https://doi.org/10.1039/d1tc01973b
Patil, Prasanna D., Wasala, Milinda, Alkhaldi, Rana, Weber, Lincoln, Kovi, Kiran Kumar, Chakrabarti, Bhaswar, Nash, Jawnaye A., Rhodes, Daniel, Rosenmann, Daniel, Divan, Ralu, Sumant, Anirudha V., Balicas, Luis, Pradhan, Nihar R., and Talapatra, Saikat. Mon .
"Photogating-driven enhanced responsivity in a few-layered ReSe2 phototransistor". United States. https://doi.org/10.1039/d1tc01973b. https://www.osti.gov/servlets/purl/1839982.
@article{osti_1839982,
title = {Photogating-driven enhanced responsivity in a few-layered ReSe2 phototransistor},
author = {Patil, Prasanna D. and Wasala, Milinda and Alkhaldi, Rana and Weber, Lincoln and Kovi, Kiran Kumar and Chakrabarti, Bhaswar and Nash, Jawnaye A. and Rhodes, Daniel and Rosenmann, Daniel and Divan, Ralu and Sumant, Anirudha V. and Balicas, Luis and Pradhan, Nihar R. and Talapatra, Saikat},
abstractNote = {A wide variety of two-dimensional (2D) metal dichalcogenide compounds have recently attracted much research interest due to their very high photoresponsivities (R) making them excellent candidates for optoelectronic applications. High R in 2D photoconductors is associated with trap state dynamics leading to a photogating effect, which is often manifested by a fractional power dependence (γ) of the photocurrent (Iph) at an effective illumination intensity (Peff). Furthermore, we present photoconductivity studies as a function of gate voltages, over a wide temperature range (20 K to 300 K) of field-effect transistors fabricated using thin layers of mechanically exfoliated Rhenium Diselenide (ReSe2). We obtain very high responsivities R ~ 16500 A/W and external quantum efficiency (EQE) ~ 3.2 × 106% (at 140 K, Vg = 60 V and Peff = 0.2 nW). A strong correlation between R and γ was established by investigating the dependence of these two quantities at various gate voltages and over a wide range of temperatures. Such correlations indicate the importance of trap state mediated photogating and its role in promoting high photo-responsivities in these materials. We believe such correlations can offer valuable insights for the design and development of high-performance photoactive devices using 2D materials.},
doi = {10.1039/d1tc01973b},
journal = {Journal of Materials Chemistry C},
number = 36,
volume = 9,
place = {United States},
year = {Mon Jul 12 00:00:00 EDT 2021},
month = {Mon Jul 12 00:00:00 EDT 2021}
}
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