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Title: Photogating-driven enhanced responsivity in a few-layered ReSe2 phototransistor

Abstract

A wide variety of two-dimensional (2D) metal dichalcogenide compounds have recently attracted much research interest due to their very high photoresponsivities (R) making them excellent candidates for optoelectronic applications. High R in 2D photoconductors is associated with trap state dynamics leading to a photogating effect, which is often manifested by a fractional power dependence (γ) of the photocurrent (Iph) at an effective illumination intensity (Peff). Furthermore, we present photoconductivity studies as a function of gate voltages, over a wide temperature range (20 K to 300 K) of field-effect transistors fabricated using thin layers of mechanically exfoliated Rhenium Diselenide (ReSe2). We obtain very high responsivities R ~ 16500 A/W and external quantum efficiency (EQE) ~ 3.2 × 106% (at 140 K, Vg = 60 V and Peff = 0.2 nW). A strong correlation between R and γ was established by investigating the dependence of these two quantities at various gate voltages and over a wide range of temperatures. Such correlations indicate the importance of trap state mediated photogating and its role in promoting high photo-responsivities in these materials. We believe such correlations can offer valuable insights for the design and development of high-performance photoactive devices using 2D materials.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [1];  [1]; ORCiD logo [3];  [4];  [5];  [6];  [3];  [3]; ORCiD logo [3]; ORCiD logo [6]; ORCiD logo [7]; ORCiD logo [1]
  1. Southern Illinois Univ., Carbondale, IL (United States)
  2. Southern Illinois Univ., Carbondale, IL (United States); Great Basin College, Elko, NV (United States)
  3. Argonne National Lab. (ANL), Argonne, IL (United States)
  4. Argonne National Lab. (ANL), Argonne, IL (United States); Univ. of Chicago, IL (United States)
  5. Jackson State Univ., Jackson, MS (United States)
  6. National High Magnetic Field Lab., Tallahassee, FL (United States)
  7. Argonne National Lab. (ANL), Argonne, IL (United States); Jackson State Univ., Jackson, MS (United States); National High Magnetic Field Lab., Tallahassee, FL (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1839982
Alternate Identifier(s):
OSTI ID: 1812403
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Materials Chemistry C
Additional Journal Information:
Journal Volume: 9; Journal Issue: 36; Journal ID: ISSN 2050-7526
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Patil, Prasanna D., Wasala, Milinda, Alkhaldi, Rana, Weber, Lincoln, Kovi, Kiran Kumar, Chakrabarti, Bhaswar, Nash, Jawnaye A., Rhodes, Daniel, Rosenmann, Daniel, Divan, Ralu, Sumant, Anirudha V., Balicas, Luis, Pradhan, Nihar R., and Talapatra, Saikat. Photogating-driven enhanced responsivity in a few-layered ReSe2 phototransistor. United States: N. p., 2021. Web. doi:10.1039/d1tc01973b.
Patil, Prasanna D., Wasala, Milinda, Alkhaldi, Rana, Weber, Lincoln, Kovi, Kiran Kumar, Chakrabarti, Bhaswar, Nash, Jawnaye A., Rhodes, Daniel, Rosenmann, Daniel, Divan, Ralu, Sumant, Anirudha V., Balicas, Luis, Pradhan, Nihar R., & Talapatra, Saikat. Photogating-driven enhanced responsivity in a few-layered ReSe2 phototransistor. United States. https://doi.org/10.1039/d1tc01973b
Patil, Prasanna D., Wasala, Milinda, Alkhaldi, Rana, Weber, Lincoln, Kovi, Kiran Kumar, Chakrabarti, Bhaswar, Nash, Jawnaye A., Rhodes, Daniel, Rosenmann, Daniel, Divan, Ralu, Sumant, Anirudha V., Balicas, Luis, Pradhan, Nihar R., and Talapatra, Saikat. Mon . "Photogating-driven enhanced responsivity in a few-layered ReSe2 phototransistor". United States. https://doi.org/10.1039/d1tc01973b. https://www.osti.gov/servlets/purl/1839982.
@article{osti_1839982,
title = {Photogating-driven enhanced responsivity in a few-layered ReSe2 phototransistor},
author = {Patil, Prasanna D. and Wasala, Milinda and Alkhaldi, Rana and Weber, Lincoln and Kovi, Kiran Kumar and Chakrabarti, Bhaswar and Nash, Jawnaye A. and Rhodes, Daniel and Rosenmann, Daniel and Divan, Ralu and Sumant, Anirudha V. and Balicas, Luis and Pradhan, Nihar R. and Talapatra, Saikat},
abstractNote = {A wide variety of two-dimensional (2D) metal dichalcogenide compounds have recently attracted much research interest due to their very high photoresponsivities (R) making them excellent candidates for optoelectronic applications. High R in 2D photoconductors is associated with trap state dynamics leading to a photogating effect, which is often manifested by a fractional power dependence (γ) of the photocurrent (Iph) at an effective illumination intensity (Peff). Furthermore, we present photoconductivity studies as a function of gate voltages, over a wide temperature range (20 K to 300 K) of field-effect transistors fabricated using thin layers of mechanically exfoliated Rhenium Diselenide (ReSe2). We obtain very high responsivities R ~ 16500 A/W and external quantum efficiency (EQE) ~ 3.2 × 106% (at 140 K, Vg = 60 V and Peff = 0.2 nW). A strong correlation between R and γ was established by investigating the dependence of these two quantities at various gate voltages and over a wide range of temperatures. Such correlations indicate the importance of trap state mediated photogating and its role in promoting high photo-responsivities in these materials. We believe such correlations can offer valuable insights for the design and development of high-performance photoactive devices using 2D materials.},
doi = {10.1039/d1tc01973b},
journal = {Journal of Materials Chemistry C},
number = 36,
volume = 9,
place = {United States},
year = {Mon Jul 12 00:00:00 EDT 2021},
month = {Mon Jul 12 00:00:00 EDT 2021}
}

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