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Title: Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure

Abstract

In the past decade, intensive studies on monolayer MoS2-based phototransistors have been carried out to achieve further enhanced optoelectronic characteristics. However, the intrinsic optoelectronic characteristics of monolayer MoS2 have still not been explored until now because of unintended interferences, such as multiple reflections of incident light originating from commonly used opaque substrates. This leads to overestimated photoresponsive characteristics inevitably due to the enhanced photogating and photoconductive effects. Here in this paper, we reveal the intrinsic photoresponsive characteristics of monolayer MoS2, including its internal responsivity and quantum efficiency, in fully transparent monolayer MoS2 phototransistors employing a van der Waals heterostructure. Interestingly, as opposed to the previous reports, the internal photoresponsive characteristics do not significantly depend on the wavelength of the incident light as long as the electron-hole pairs are generated in the same k-space. This study provides a deeper understanding of the photoresponsive characteristics of MoS2 and lays the foundation for two-dimensional materials-based transparent phototransistors.

Authors:
 [1];  [2];  [1];  [1];  [1];  [1]; ORCiD logo [3];  [1]; ORCiD logo [2];  [3];  [4]; ORCiD logo [1]
  1. Seoul National Univ. (Korea). Institute of Applied Physics
  2. Sungkyunkwan Univ., Suwon (Korea)
  3. Univ. of California, Berkeley, CA (United States)
  4. Korea Institute of Science and Technology (KIST), Seoul (Korea). Photo-Electronic Hybrids Research Center
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1638992
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 13; Journal Issue: 8; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; MoS2; phototransistor; heterostructure; internal quantum efficiency; internal responsivity

Citation Formats

Pak, Jinsu, Lee, Ilmin, Cho, Kyungjune, Kim, Jae-Keun, Jeong, Hyunhak, Hwang, Wang-Taek, Ahn, Geun Ho, Kang, Keehoon, Yu, Woo Jong, Javey, Ali, Chung, Seungjun, and Lee, Takhee. Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure. United States: N. p., 2019. Web. https://doi.org/10.1021/acsnano.9b04829.
Pak, Jinsu, Lee, Ilmin, Cho, Kyungjune, Kim, Jae-Keun, Jeong, Hyunhak, Hwang, Wang-Taek, Ahn, Geun Ho, Kang, Keehoon, Yu, Woo Jong, Javey, Ali, Chung, Seungjun, & Lee, Takhee. Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure. United States. https://doi.org/10.1021/acsnano.9b04829
Pak, Jinsu, Lee, Ilmin, Cho, Kyungjune, Kim, Jae-Keun, Jeong, Hyunhak, Hwang, Wang-Taek, Ahn, Geun Ho, Kang, Keehoon, Yu, Woo Jong, Javey, Ali, Chung, Seungjun, and Lee, Takhee. Thu . "Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure". United States. https://doi.org/10.1021/acsnano.9b04829. https://www.osti.gov/servlets/purl/1638992.
@article{osti_1638992,
title = {Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure},
author = {Pak, Jinsu and Lee, Ilmin and Cho, Kyungjune and Kim, Jae-Keun and Jeong, Hyunhak and Hwang, Wang-Taek and Ahn, Geun Ho and Kang, Keehoon and Yu, Woo Jong and Javey, Ali and Chung, Seungjun and Lee, Takhee},
abstractNote = {In the past decade, intensive studies on monolayer MoS2-based phototransistors have been carried out to achieve further enhanced optoelectronic characteristics. However, the intrinsic optoelectronic characteristics of monolayer MoS2 have still not been explored until now because of unintended interferences, such as multiple reflections of incident light originating from commonly used opaque substrates. This leads to overestimated photoresponsive characteristics inevitably due to the enhanced photogating and photoconductive effects. Here in this paper, we reveal the intrinsic photoresponsive characteristics of monolayer MoS2, including its internal responsivity and quantum efficiency, in fully transparent monolayer MoS2 phototransistors employing a van der Waals heterostructure. Interestingly, as opposed to the previous reports, the internal photoresponsive characteristics do not significantly depend on the wavelength of the incident light as long as the electron-hole pairs are generated in the same k-space. This study provides a deeper understanding of the photoresponsive characteristics of MoS2 and lays the foundation for two-dimensional materials-based transparent phototransistors.},
doi = {10.1021/acsnano.9b04829},
journal = {ACS Nano},
number = 8,
volume = 13,
place = {United States},
year = {2019},
month = {7}
}

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