Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure

Pak, Jinsu; Lee, Ilmin; Cho, Kyungjune; Kim, Jae-Keun; Jeong, Hyunhak; Hwang, Wang-Taek; Ahn, Geun Ho; Kang, Keehoon; Yu, Woo Jong; Javey, Ali; Chung, Seungjun; Lee, Takhee

doi:10.1021/acsnano.9b04829

Title: Intrinsic Optoelectronic Characteristics of MoS₂ Phototransistors via a Fully Transparent van der Waals Heterostructure

Journal Article · 25 July 2019 · ACS Nano

DOI: https://doi.org/10.1021/acsnano.9b04829 · OSTI ID:1638992

Pak, Jinsu ^[1]; Lee, Ilmin ^[2]; Cho, Kyungjune ^[1]; Kim, Jae-Keun ^[1]; Jeong, Hyunhak ^[1]; Hwang, Wang-Taek ^[1];

^[3]; Kang, Keehoon ^[1];

^[2]; Javey, Ali ^[3]; Chung, Seungjun ^[4];

^[1]

Seoul National Univ. (Korea). Institute of Applied Physics
Sungkyunkwan Univ., Suwon (Korea)
Univ. of California, Berkeley, CA (United States)
Korea Institute of Science and Technology (KIST), Seoul (Korea). Photo-Electronic Hybrids Research Center

In the past decade, intensive studies on monolayer MoS₂-based phototransistors have been carried out to achieve further enhanced optoelectronic characteristics. However, the intrinsic optoelectronic characteristics of monolayer MoS₂ have still not been explored until now because of unintended interferences, such as multiple reflections of incident light originating from commonly used opaque substrates. This leads to overestimated photoresponsive characteristics inevitably due to the enhanced photogating and photoconductive effects. Here in this paper, we reveal the intrinsic photoresponsive characteristics of monolayer MoS₂, including its internal responsivity and quantum efficiency, in fully transparent monolayer MoS₂ phototransistors employing a van der Waals heterostructure. Interestingly, as opposed to the previous reports, the internal photoresponsive characteristics do not significantly depend on the wavelength of the incident light as long as the electron-hole pairs are generated in the same k-space. This study provides a deeper understanding of the photoresponsive characteristics of MoS₂ and lays the foundation for two-dimensional materials-based transparent phototransistors.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1638992

Journal Information:: ACS Nano, Vol. 13, Issue 8; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 34 works

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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
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internal quantum efficiency
internal responsivity

Title: Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure

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Title: Intrinsic Optoelectronic Characteristics of MoS₂ Phototransistors via a Fully Transparent van der Waals Heterostructure