Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure

Pak, Jinsu; Lee, Ilmin; Cho, Kyungjune; Kim, Jae-Keun; Jeong, Hyunhak; Hwang, Wang-Taek; Ahn, Geun Ho; Kang, Keehoon; Yu, Woo Jong; Javey, Ali; Chung, Seungjun; Lee, Takhee

doi:10.1021/acsnano.9b04829

Title: Intrinsic Optoelectronic Characteristics of MoS₂ Phototransistors via a Fully Transparent van der Waals Heterostructure

Abstract

In the past decade, intensive studies on monolayer MoS₂-based phototransistors have been carried out to achieve further enhanced optoelectronic characteristics. However, the intrinsic optoelectronic characteristics of monolayer MoS₂ have still not been explored until now because of unintended interferences, such as multiple reflections of incident light originating from commonly used opaque substrates. This leads to overestimated photoresponsive characteristics inevitably due to the enhanced photogating and photoconductive effects. Here in this paper, we reveal the intrinsic photoresponsive characteristics of monolayer MoS₂, including its internal responsivity and quantum efficiency, in fully transparent monolayer MoS₂ phototransistors employing a van der Waals heterostructure. Interestingly, as opposed to the previous reports, the internal photoresponsive characteristics do not significantly depend on the wavelength of the incident light as long as the electron-hole pairs are generated in the same k-space. This study provides a deeper understanding of the photoresponsive characteristics of MoS₂ and lays the foundation for two-dimensional materials-based transparent phototransistors.

Authors:

Pak, Jinsu ^[1]; Lee, Ilmin ^[2]; Cho, Kyungjune ^[1]; Kim, Jae-Keun ^[1]; Jeong, Hyunhak ^[1]; Hwang, Wang-Taek ^[1];

^[3]; Kang, Keehoon ^[1];

^[2]; Javey, Ali ^[3]; Chung, Seungjun ^[4];

^[1]

Seoul National Univ. (Korea). Institute of Applied Physics
Sungkyunkwan Univ., Suwon (Korea)
Univ. of California, Berkeley, CA (United States)
Korea Institute of Science and Technology (KIST), Seoul (Korea). Photo-Electronic Hybrids Research Center

Publication Date:: 2019-07-25

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1638992

Grant/Contract Number:: AC02-05CH11231

Resource Type:: Accepted Manuscript

Journal Name:: ACS Nano

Additional Journal Information:: Journal Volume: 13; Journal Issue: 8; Journal ID: ISSN 1936-0851

Publisher:: American Chemical Society (ACS)

Country of Publication:: United States

Language:: English

Subject:: 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; MoS2; phototransistor; heterostructure; internal quantum efficiency; internal responsivity

Citation Formats


                    Pak, Jinsu, Lee, Ilmin, Cho, Kyungjune, Kim, Jae-Keun, Jeong, Hyunhak, Hwang, Wang-Taek, Ahn, Geun Ho, Kang, Keehoon, Yu, Woo Jong, Javey, Ali, Chung, Seungjun, and Lee, Takhee. Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure.  United States: N. p., 2019. 
Web.  doi:10.1021/acsnano.9b04829.

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                    Pak, Jinsu, Lee, Ilmin, Cho, Kyungjune, Kim, Jae-Keun, Jeong, Hyunhak, Hwang, Wang-Taek, Ahn, Geun Ho, Kang, Keehoon, Yu, Woo Jong, Javey, Ali, Chung, Seungjun, & Lee, Takhee. Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure.  United States.  https://doi.org/10.1021/acsnano.9b04829

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                    Pak, Jinsu, Lee, Ilmin, Cho, Kyungjune, Kim, Jae-Keun, Jeong, Hyunhak, Hwang, Wang-Taek, Ahn, Geun Ho, Kang, Keehoon, Yu, Woo Jong, Javey, Ali, Chung, Seungjun, and Lee, Takhee. Thu .  
"Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure".  United States.  https://doi.org/10.1021/acsnano.9b04829.  https://www.osti.gov/servlets/purl/1638992.

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@article{osti_1638992,

  title        = {Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure},

  author       = {Pak, Jinsu and Lee, Ilmin and Cho, Kyungjune and Kim, Jae-Keun and Jeong, Hyunhak and Hwang, Wang-Taek and Ahn, Geun Ho and Kang, Keehoon and Yu, Woo Jong and Javey, Ali and Chung, Seungjun and Lee, Takhee},

  abstractNote = {In the past decade, intensive studies on monolayer MoS2-based phototransistors have been carried out to achieve further enhanced optoelectronic characteristics. However, the intrinsic optoelectronic characteristics of monolayer MoS2 have still not been explored until now because of unintended interferences, such as multiple reflections of incident light originating from commonly used opaque substrates. This leads to overestimated photoresponsive characteristics inevitably due to the enhanced photogating and photoconductive effects. Here in this paper, we reveal the intrinsic photoresponsive characteristics of monolayer MoS2, including its internal responsivity and quantum efficiency, in fully transparent monolayer MoS2 phototransistors employing a van der Waals heterostructure. Interestingly, as opposed to the previous reports, the internal photoresponsive characteristics do not significantly depend on the wavelength of the incident light as long as the electron-hole pairs are generated in the same k-space. This study provides a deeper understanding of the photoresponsive characteristics of MoS2 and lays the foundation for two-dimensional materials-based transparent phototransistors.},

  doi          = {10.1021/acsnano.9b04829},

  journal      = {ACS Nano},

  number       = 8,

  volume       = 13,

  place        = {United States},

  year         = {2019},

  month        = {7}

}

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Title: Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure

Abstract

Citation Formats

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides journal, November 2012

2D transition metal dichalcogenides journal, June 2017

Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides journal, March 2016

Recent Advances in Two-Dimensional Materials beyond Graphene journal, October 2015

High-Gain Phototransistors Based on a CVD MoS 2 Monolayer journal, May 2013

How Good Can Monolayer MoS 2 Transistors Be? journal, September 2011

Enhanced photoresponsivity of multilayer MoS 2 transistors using high work function MoO x overlayer journal, January 2017

Electrical stability of multilayer MoS 2 field-effect transistor under negative bias stress at various temperatures: Electrical stability of multilayer MoS 2 field-effect transistor under negative bias stress at various temperatures journal, June 2014

High-Performance, Highly Bendable MoS 2 Transistors with High-K Dielectrics for Flexible Low-Power Systems journal, May 2013

Fully Inkjet-Printed, Mechanically Flexible MoS 2 Nanosheet Photodetectors journal, January 2019

Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction journal, July 2014

Atomically thin p–n junctions with van der Waals heterointerfaces journal, August 2014

Configuration-Dependent Electrically Tunable Van der Waals Heterostructures Based on MoTe 2 /MoS 2 journal, May 2016

Electric and Photovoltaic Behavior of a Few-Layer α-MoTe 2 /MoS 2 Dichalcogenide Heterojunction journal, February 2016

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Analysis of noise generation and electric conduction at grain boundaries in CVD-grown MoS 2 field effect transistors journal, October 2017

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Title: Intrinsic Optoelectronic Characteristics of MoS₂ Phototransistors via a Fully Transparent van der Waals Heterostructure

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
journal, November 2012

2D transition metal dichalcogenides
journal, June 2017

Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides
journal, March 2016

Recent Advances in Two-Dimensional Materials beyond Graphene
journal, October 2015

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journal, May 2013

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journal, September 2011

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journal, January 2017

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journal, June 2014

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journal, May 2013

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journal, January 2019

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journal, July 2014

Atomically thin p–n junctions with van der Waals heterointerfaces
journal, August 2014

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journal, May 2016

Electric and Photovoltaic Behavior of a Few-Layer α-MoTe ₂ /MoS ₂ Dichalcogenide Heterojunction
journal, February 2016

Near-Infrared Photodetector Based on MoS ₂ /Black Phosphorus Heterojunction
journal, March 2016

Role of Hole Trap Sites in MoS ₂ for Inconsistency in Optical and Electrical Phenomena
journal, March 2018

Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures
journal, January 2014

Vertical heterostructures based on SnSe ₂ /MoS ₂ for high performance photodetectors
journal, March 2017

Engineering Light Outcoupling in 2D Materials
journal, January 2015

Mechanisms of Photoconductivity in Atomically Thin MoS ₂
journal, October 2014

Highly sensitive visible to infrared MoTe ₂ photodetectors enhanced by the photogating effect
journal, September 2016

Emerging Photoluminescence in Monolayer MoS₂
journal, April 2010

Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers
journal, August 2010

Ultraviolet Raman microscopy of single and multilayer graphene
journal, August 2009

Boron nitride substrates for high-quality graphene electronics
journal, August 2010

Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices
journal, September 2012

Hysteresis in the transfer characteristics of MoS ₂ transistors
journal, October 2017

On Valence-Band Splitting in Layered MoS ₂
journal, July 2015

Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenides
journal, September 2013

Slow cooling and efficient extraction of C-exciton hot carriers in MoS2 monolayer
journal, January 2017

Atomically Thin ${MoS}_{2}$ A New Direct-Gap Semiconductor
journal, September 2010

Photocurrent generation with two-dimensional van der Waals semiconductors
journal, January 2015

Photogating in Low Dimensional Photodetectors
journal, October 2017

Electrical transport and persistent photoconductivity in monolayer MoS ₂ phototransistors
journal, May 2017

Transparent Large-Area MoS ₂ Phototransistors with Inkjet-Printed Components on Flexible Platforms
journal, August 2017

Analysis of noise generation and electric conduction at grain boundaries in CVD-grown MoS ₂ field effect transistors
journal, October 2017

Ultrasensitive photodetectors based on monolayer MoS2
journal, June 2013

Highly Sensitive, Encapsulated MoS ₂ Photodetector with Gate Controllable Gain and Speed
journal, October 2015

High-responsivity UV-Vis Photodetector Based on Transferable WS2 Film Deposited by Magnetron Sputtering
journal, January 2016

Photocarrier relaxation pathway in two-dimensional semiconducting transition metal dichalcogenides
journal, July 2014

Exciton Dynamics in Suspended Monolayer and Few-Layer MoS ₂ 2D Crystals
journal, January 2013

Effects of strain on band structure and effective masses in MoS $_{2}$
journal, December 2012

Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS $_{2}$
journal, May 2012

Highly responsive MoS2 photodetectors enhanced by graphene quantum dots
journal, July 2015

Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect Transistors
journal, June 2015

Effect of buffer layer on photoresponse of MoS ₂ phototransistor
journal, April 2018