Controlling surface adatom kinetics for improved structural and optical properties of high indium content aluminum indium nitride

Engel, Zachary; Clinton, Evan A.; Matthews, Christopher M.; Doolittle, W. Alan

doi:10.1063/1.5142295

Title: Controlling surface adatom kinetics for improved structural and optical properties of high indium content aluminum indium nitride

Authors:

^[1];

^[1]; Matthews, Christopher M. ^[1];

^[1]

School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA

Publication Date:: 2020-03-31

Sponsoring Org.:: USDOE

OSTI Identifier:: 1605953

Grant/Contract Number:: SG DMR-1710032

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Name: Journal of Applied Physics Journal Volume: 127 Journal Issue: 12; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Engel, Zachary, Clinton, Evan A., Matthews, Christopher M., and Doolittle, W. Alan. Controlling surface adatom kinetics for improved structural and optical properties of high indium content aluminum indium nitride.  United States: N. p., 2020. 
Web.  doi:10.1063/1.5142295.

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                    Engel, Zachary, Clinton, Evan A., Matthews, Christopher M., & Doolittle, W. Alan. Controlling surface adatom kinetics for improved structural and optical properties of high indium content aluminum indium nitride.  United States.  https://doi.org/10.1063/1.5142295

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                    Engel, Zachary, Clinton, Evan A., Matthews, Christopher M., and Doolittle, W. Alan. Tue .  
"Controlling surface adatom kinetics for improved structural and optical properties of high indium content aluminum indium nitride".  United States.  https://doi.org/10.1063/1.5142295.

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@article{osti_1605953,

  title        = {Controlling surface adatom kinetics for improved structural and optical properties of high indium content aluminum indium nitride},

  author       = {Engel, Zachary and Clinton, Evan A. and Matthews, Christopher M. and Doolittle, W. Alan},

  abstractNote = {},

  doi          = {10.1063/1.5142295},

  journal      = {Journal of Applied Physics},

  number       = 12,

  volume       = 127,

  place        = {United States},

  year         = {2020},

  month        = {3}

}

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Title: Controlling surface adatom kinetics for improved structural and optical properties of high indium content aluminum indium nitride

Citation Formats

Observation and control of the surface kinetics of InGaN for the elimination of phase separation journal, July 2012

Observation and mitigation of RF-plasma-induced damage to III-nitrides grown by molecular beam epitaxy journal, July 2019

Energy Levels in Quantum Wires with Finite Barrier Potential journal, October 1993

Small-signal characteristics of AlInN/GaN HEMTs journal, January 2006

Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes journal, March 2010

Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy journal, June 2012

Growth and Characterization of AlInN Ternary Alloys in Whole Composition Range and Fabrication of InN/AlInN Multiple Quantum Wells by RF Molecular Beam Epitaxy journal, May 2006

Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range journal, January 2007

Band gap bowing for high In content InAlN films journal, July 2019

Phase separation in InGaN grown by metalorganic chemical vapor deposition journal, January 1998

Deposition and characterization of reactive magnetron sputtered aluminum nitride thin films for film bulk acoustic wave resonator journal, April 2007

Effects of AlN thickness on structural and transport properties of In-rich n-AlInN/AlN/p-Si(0 0 1) heterojunctions grown by magnetron sputtering journal, February 2013

Structural and electrical characterization of InN, InGaN, and p-InGaN grown by metal-modulated epitaxy journal, May 2013

Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy journal, February 2003

Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering journal, November 2018

Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μ m/h by plasma-assisted molecular beam epitaxy journal, October 2015

Thermodynamic Stability and Redistribution of Charges in Ternary AlGaN, InGaN, and InAlN Alloys journal, January 2005

A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN journal, September 2007

Influence of the AlInN Thickness on the Photovoltaic Characteristics of AlInN on Si Solar Cells Deposited by RF Sputtering journal, September 2018

Observation of vertical honeycomb structure in InAlN∕GaN heterostructures due to lateral phase separation journal, February 2007

Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films journal, January 1996

Ultra-wide-bandgap AlGaN homojunction tunnel diodes with negative differential resistance journal, August 2019

Atmospheric-pressure MOVPE growth of In-rich InAlN journal, May 2008

Magnetron-sputter deposition of high-indium-content n -AlInN thin film on p -Si(001) substrate for photovoltaic applications journal, September 2012

Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap journal, November 2010

High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN journal, July 2003

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High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy journal, November 2016

A review of the synthesis of reduced defect density InxGa1−xN for all indium compositions journal, October 2017

Observation and control of the surface kinetics of InGaN for the elimination of phase separation
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Observation and mitigation of RF-plasma-induced damage to III-nitrides grown by molecular beam epitaxy
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Energy Levels in Quantum Wires with Finite Barrier Potential
journal, October 1993

Small-signal characteristics of AlInN/GaN HEMTs
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Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes
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Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy
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Growth and Characterization of AlInN Ternary Alloys in Whole Composition Range and Fabrication of InN/AlInN Multiple Quantum Wells by RF Molecular Beam Epitaxy
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Effects of AlN thickness on structural and transport properties of In-rich n-AlInN/AlN/p-Si(0 0 1) heterojunctions grown by magnetron sputtering
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Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films
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