Influences of elevated thermal decomposition of ammonia gas on indium nitride grown by sol–gel spin coating method
- Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)
- School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)
Highlights: • A study on indium nitride growth via sol-gel spin coating and nitridation. • Thermal decomposition effects of ammonia gas on films properties are investigated. • Chemical processes describing InN crystal growth are revealed. • Thermal etching effect and metallic indium are observed at increasing temperature. • New insights in synthesizing InN thin films with a simple and low cost method. - Abstract: Indium nitride (InN) thin films grown on aluminum nitride on p-type silicon (111) [AlN/p-Si(111)] substrates are prepared via sol–gel spin coating method followed by nitridation. The thermal decomposition effects of ammonia (NH{sub 3}) gas on the structural properties and surface morphologies of the deposited films are investigated. X-ray diffraction results reveal that the crystalline quality of InN degrades markedly as thermal decomposition of NH{sub 3} gas increases from 700 to 850 °C, at which indium oxide (In{sub 2}O{sub 3}) forms in the deposited films. The thermal etching effect and formation of indium droplet on the film are observed at 850 °C. These findings are consistent with those of elementary and cross-sectional analysis obtained through energy dispersive spectroscopy and field-emission scanning electron microscopy. The findings deduced that InN thin films with densely packed grains can be grown at NH{sub 3} decomposition temperature of 700 °C.
- OSTI ID:
- 22730521
- Journal Information:
- Materials Research Bulletin, Vol. 96, Issue Part 3; Conference: International conference on advances in functional materials (AFM)-2016, Jeju Island (Korea, Republic of), 8-11 Aug 2016; Other Information: Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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