Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap

Journal Article · Mon Nov 08 00:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3509416· OSTI ID:21464555

Moseley, Michael; Lowder, Jonathan; Billingsley, Daniel; Doolittle, W Alan ^[1]

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1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, 30332 Georgia (United States)

The surface kinetics of InGaN alloys grown via metal-modulated epitaxy (MME) are explored in combination with transient reflection high-energy electron diffraction intensities. A method for monitoring and controlling indium segregation in situ is demonstrated. It is found that indium segregation is more accurately associated with the quantity of excess adsorbed metal, rather than the metal-rich growth regime in general. A modified form of MME is developed in which the excess metal dose is managed via shuttered growth, and high-quality InGaN films throughout the miscibility gap are grown.

• OSTI ID: 21464555
• Journal Information: Applied Physics Letters, Vol. 97, Issue 19; Other Information: DOI: 10.1063/1.3509416; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ADSORPTION
CRYSTAL GROWTH
ELECTRON DIFFRACTION
FILMS
GALLIUM NITRIDES
INDIUM
INDIUM COMPOUNDS
KINETICS
LAYERS
MOLECULAR BEAM EPITAXY
REFLECTION
SEGREGATION
SEMICONDUCTOR MATERIALS
SOLUBILITY
SURFACES
TRANSIENTS
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
DIFFRACTION
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
MATERIALS
METALS
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
SCATTERING
SORPTION