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Title: Pre-nitridation induced In incorporation in In{sub x}Ga{sub 1−x}N nanorods on Si(111) grown by molecular beam epitaxy

Abstract

We address the issue of obtaining high quality green emitting InGaN nanorods without any phase separation. Role of pre-nitridation of the Si(111) substrate and growth, temperature on the morphology, structural and optical properties of In{sub x}Ga{sub 1−x}N films grown by plasma assisted molecular beam epitaxy, has been studied. The nitrogen rich growth environment and surface nitridation results in the formation of vertically well-aligned single crystalline nanorods that are coalesced and isolated at 400 °C and 500 °C, respectively. In incorporation is also seen to be enhanced to ≈28% at 400 °C to yield a stable green emission, while the nanorods grown at 500 °C show blue band-edge emission. The orientation, phase separations, and optical properties characterized by Reflection High Energy Electron Diffraction, Field Emission Scanning Electron Microscopy, high resolution x-ray diffraction, x-ray photoelectron spectroscopy, and photoluminescence are corroborated to understand the underlying mechanism. The study optimizes conditions to grow high quality catalyst-free well-aligned InGaN rods on nitrided Si surface, whose band-edge emission can be tuned from blue to green by sheer control of the substrate temperature.

Authors:
;
Publication Date:
OSTI Identifier:
22490782
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CATALYSTS; ELECTRON DIFFRACTION; FIELD EMISSION; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; NANOSTRUCTURES; NITRIDATION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SURFACES; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

De, Arpan, Tangi, Malleswararao, and Shivaprasad, S. M., E-mail: smsprasad@jncasr.ac.in. Pre-nitridation induced In incorporation in In{sub x}Ga{sub 1−x}N nanorods on Si(111) grown by molecular beam epitaxy. United States: N. p., 2015. Web. doi:10.1063/1.4926413.
De, Arpan, Tangi, Malleswararao, & Shivaprasad, S. M., E-mail: smsprasad@jncasr.ac.in. Pre-nitridation induced In incorporation in In{sub x}Ga{sub 1−x}N nanorods on Si(111) grown by molecular beam epitaxy. United States. https://doi.org/10.1063/1.4926413
De, Arpan, Tangi, Malleswararao, and Shivaprasad, S. M., E-mail: smsprasad@jncasr.ac.in. 2015. "Pre-nitridation induced In incorporation in In{sub x}Ga{sub 1−x}N nanorods on Si(111) grown by molecular beam epitaxy". United States. https://doi.org/10.1063/1.4926413.
@article{osti_22490782,
title = {Pre-nitridation induced In incorporation in In{sub x}Ga{sub 1−x}N nanorods on Si(111) grown by molecular beam epitaxy},
author = {De, Arpan and Tangi, Malleswararao and Shivaprasad, S. M., E-mail: smsprasad@jncasr.ac.in},
abstractNote = {We address the issue of obtaining high quality green emitting InGaN nanorods without any phase separation. Role of pre-nitridation of the Si(111) substrate and growth, temperature on the morphology, structural and optical properties of In{sub x}Ga{sub 1−x}N films grown by plasma assisted molecular beam epitaxy, has been studied. The nitrogen rich growth environment and surface nitridation results in the formation of vertically well-aligned single crystalline nanorods that are coalesced and isolated at 400 °C and 500 °C, respectively. In incorporation is also seen to be enhanced to ≈28% at 400 °C to yield a stable green emission, while the nanorods grown at 500 °C show blue band-edge emission. The orientation, phase separations, and optical properties characterized by Reflection High Energy Electron Diffraction, Field Emission Scanning Electron Microscopy, high resolution x-ray diffraction, x-ray photoelectron spectroscopy, and photoluminescence are corroborated to understand the underlying mechanism. The study optimizes conditions to grow high quality catalyst-free well-aligned InGaN rods on nitrided Si surface, whose band-edge emission can be tuned from blue to green by sheer control of the substrate temperature.},
doi = {10.1063/1.4926413},
url = {https://www.osti.gov/biblio/22490782}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 2,
volume = 118,
place = {United States},
year = {Tue Jul 14 00:00:00 EDT 2015},
month = {Tue Jul 14 00:00:00 EDT 2015}
}