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Title: Thermal conductivity of crystalline AlN and the influence of atomic-scale defects

Journal Article · · Journal of Applied Physics
DOI: https://doi.org/10.1063/1.5097172 · OSTI ID:1604926
 [1]; ORCiD logo [2];  [3]; ORCiD logo [4];  [5];  [6];  [7];  [1]; ORCiD logo [3];  [3]; ORCiD logo [1]
  1. Stanford Univ., CA (United States)
  2. Stanford Univ., CA (United States); Univ. of Twente (Netherlands)
  3. Cornell Univ., Ithaca, NY (United States)
  4. Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
  5. Univ. of California, Los Angeles, CA (United States)
  6. LITEN, CEA-Grenoble, (France); Savitribai Phule Pune Univ., Maharashtra (India)
  7. LITEN, CEA-Grenoble, (France)

Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet photonics, where an understanding of its thermal properties is essential. In this work, we measure the thermal conductivity of crystalline AlN by the 3ω method, finding that it ranges from 674 ± 56 Wm–1K–1 at 100 K to 186 ± 7 Wm–1 K–1 at 400 K, with a value of 237 ± 6 Wm–1 K–1 at room temperature. We compare these data with analytical models and first-principles calculations, taking into account atomic-scale defects (O, Si, C impurities, and Al vacancies). We find that Al vacancies play the greatest role in reducing thermal conductivity because of the largest mass-difference scattering. Modeling also reveals that 10% of heat conduction is contributed by phonons with long mean free paths (MFPs), over ~7 μm at room temperature, and 50% by phonons with MFPs over ~0.3 μm. Consequently, the effective thermal conductivity of AlN is strongly reduced in submicrometer thin films or devices due to phonon-boundary scattering.

Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Organization:
USDOE; National Science Foundation (NSF); Defense Advanced Research Projects Agency (DARPA); US Air Force Office of Scientific Research (AFOSR); DST-INSPIRE Grant, India
Grant/Contract Number:
AC02-76SF00515; EEC-1449548; 1534279; 1534303; ECCS-1542152; FA9550615-1-0187 DEF; IFA17-MS122
OSTI ID:
1604926
Journal Information:
Journal of Applied Physics, Vol. 126, Issue 18; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 71 works
Citation information provided by
Web of Science

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