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Title: Quasi-Ballistic Thermal Transport Across MoS2 Thin Films

Abstract

Layered two-dimensional (2D) materials have highly anisotropic thermal properties between the in-plane and cross-plane directions. Conventionally, it is thought that cross-plane thermal conductivities (κz) are low, and therefore c-axis phonon mean free paths (MFPs) are small. Here, we measure κz across MoS2 films of varying thickness (20–240 nm) and uncover evidence of very long c-axis phonon MFPs at room temperature in these layered semiconductors. Experimental data obtained using time-domain thermoreflectance (TDTR) are in good agreement with first-principles density functional theory (DFT). These calculations suggest that ~50% of the heat is carried by phonons with MFP > 200 nm, exceeding kinetic theory estimates by nearly 2 orders of magnitude. Because of quasi-ballistic effects, the κz of nanometer-thin films of MoS2 scales with their thickness and the volumetric thermal resistance asymptotes to a nonzero value, ~10 m2 K GW–1. This contributes as much as 30% to the total thermal resistance of a 20 nm thick film, the rest being limited by thermal interface resistance with the SiO2 substrate and top-side aluminum transducer. Furthermore, these findings are essential for understanding heat flow across nanometer-thin films of MoS2 for optoelectronic and thermoelectric applications.

Authors:
ORCiD logo [1];  [2]; ORCiD logo [3];  [4];  [5];  [4]; ORCiD logo [1]; ORCiD logo [6];  [4]; ORCiD logo [4]
  1. Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
  2. Univ. of Pittsburgh, Pittsburgh, PA (United States)
  3. Univ. of California, Davis, CA (United States)
  4. Stanford Univ., Stanford, CA (United States)
  5. Stanford Univ., Stanford, CA (United States); Northrop Grumman Corp., Redondo Beach, CA (United States)
  6. Univ. of California, Davis, CA (United States); Ikerbasque, Bilbao (Spain)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1529115
Grant/Contract Number:  
1542883; FA9550-14-1-0251; EEC-1449548; AC02-76SF00515
Resource Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 19; Journal Issue: 4; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; phonon; mean free path; MoS2; cross-plane; thermal conductivity; time-domain thermoreflectance

Citation Formats

Sood, Aditya, Xiong, Feng, Chen, Shunda, Cheaito, Ramez, Lian, Feifei, Asheghi, Mehdi, Cui, Yi, Donadio, Davide, Goodson, Kenneth E., and Pop, Eric. Quasi-Ballistic Thermal Transport Across MoS2 Thin Films. United States: N. p., 2019. Web. doi:10.1021/acs.nanolett.8b05174.
Sood, Aditya, Xiong, Feng, Chen, Shunda, Cheaito, Ramez, Lian, Feifei, Asheghi, Mehdi, Cui, Yi, Donadio, Davide, Goodson, Kenneth E., & Pop, Eric. Quasi-Ballistic Thermal Transport Across MoS2 Thin Films. United States. https://doi.org/10.1021/acs.nanolett.8b05174
Sood, Aditya, Xiong, Feng, Chen, Shunda, Cheaito, Ramez, Lian, Feifei, Asheghi, Mehdi, Cui, Yi, Donadio, Davide, Goodson, Kenneth E., and Pop, Eric. Wed . "Quasi-Ballistic Thermal Transport Across MoS2 Thin Films". United States. https://doi.org/10.1021/acs.nanolett.8b05174. https://www.osti.gov/servlets/purl/1529115.
@article{osti_1529115,
title = {Quasi-Ballistic Thermal Transport Across MoS2 Thin Films},
author = {Sood, Aditya and Xiong, Feng and Chen, Shunda and Cheaito, Ramez and Lian, Feifei and Asheghi, Mehdi and Cui, Yi and Donadio, Davide and Goodson, Kenneth E. and Pop, Eric},
abstractNote = {Layered two-dimensional (2D) materials have highly anisotropic thermal properties between the in-plane and cross-plane directions. Conventionally, it is thought that cross-plane thermal conductivities (κz) are low, and therefore c-axis phonon mean free paths (MFPs) are small. Here, we measure κz across MoS2 films of varying thickness (20–240 nm) and uncover evidence of very long c-axis phonon MFPs at room temperature in these layered semiconductors. Experimental data obtained using time-domain thermoreflectance (TDTR) are in good agreement with first-principles density functional theory (DFT). These calculations suggest that ~50% of the heat is carried by phonons with MFP > 200 nm, exceeding kinetic theory estimates by nearly 2 orders of magnitude. Because of quasi-ballistic effects, the κz of nanometer-thin films of MoS2 scales with their thickness and the volumetric thermal resistance asymptotes to a nonzero value, ~10 m2 K GW–1. This contributes as much as 30% to the total thermal resistance of a 20 nm thick film, the rest being limited by thermal interface resistance with the SiO2 substrate and top-side aluminum transducer. Furthermore, these findings are essential for understanding heat flow across nanometer-thin films of MoS2 for optoelectronic and thermoelectric applications.},
doi = {10.1021/acs.nanolett.8b05174},
journal = {Nano Letters},
number = 4,
volume = 19,
place = {United States},
year = {Wed Feb 27 00:00:00 EST 2019},
month = {Wed Feb 27 00:00:00 EST 2019}
}

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