Quasi-Ballistic Thermal Transport Across MoS2 Thin Films

Sood, Aditya; Xiong, Feng; Chen, Shunda; Cheaito, Ramez; Lian, Feifei; Asheghi, Mehdi; Cui, Yi; Donadio, Davide; Goodson, Kenneth E.; Pop, Eric

doi:10.1021/acs.nanolett.8b05174

Title: Quasi-Ballistic Thermal Transport Across MoS₂ Thin Films

Journal Article · 26 February 2019 · Nano Letters

DOI: https://doi.org/10.1021/acs.nanolett.8b05174 · OSTI ID:1529115

^[1]; Xiong, Feng ^[2];

^[3]; Cheaito, Ramez ^[4]; Lian, Feifei ^[5]; Asheghi, Mehdi ^[4];

^[1];

^[6]; Goodson, Kenneth E. ^[4];

^[4]

Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
Univ. of Pittsburgh, Pittsburgh, PA (United States)
Univ. of California, Davis, CA (United States)
Stanford Univ., Stanford, CA (United States)
Stanford Univ., Stanford, CA (United States); Northrop Grumman Corp., Redondo Beach, CA (United States)
Univ. of California, Davis, CA (United States); Ikerbasque, Bilbao (Spain)

Layered two-dimensional (2D) materials have highly anisotropic thermal properties between the in-plane and cross-plane directions. Conventionally, it is thought that cross-plane thermal conductivities (κ_z) are low, and therefore c-axis phonon mean free paths (MFPs) are small. Here, we measure κ_z across MoS₂ films of varying thickness (20–240 nm) and uncover evidence of very long c-axis phonon MFPs at room temperature in these layered semiconductors. Experimental data obtained using time-domain thermoreflectance (TDTR) are in good agreement with first-principles density functional theory (DFT). These calculations suggest that ~50% of the heat is carried by phonons with MFP > 200 nm, exceeding kinetic theory estimates by nearly 2 orders of magnitude. Because of quasi-ballistic effects, the κ_z of nanometer-thin films of MoS₂ scales with their thickness and the volumetric thermal resistance asymptotes to a nonzero value, ~10 m² K GW^–1. This contributes as much as 30% to the total thermal resistance of a 20 nm thick film, the rest being limited by thermal interface resistance with the SiO₂ substrate and top-side aluminum transducer. Furthermore, these findings are essential for understanding heat flow across nanometer-thin films of MoS₂ for optoelectronic and thermoelectric applications.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1529115

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 4 Vol. 19; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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MoS2
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Title: Quasi-Ballistic Thermal Transport Across MoS₂ Thin Films