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Title: Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS 2 by Raman Thermometry

The electrical and thermal behavior of nanoscale devices based on two-dimensional (2D) materials is often limited by their contacts and interfaces. Here we report the temperature-dependent thermal boundary conductance (TBC) of monolayer MoS 2 with AlN and SiO 2, using Raman thermometry with laser-induced heating. The temperature-dependent optical absorption of the 2D material is crucial in such experiments, which we characterize here for the first time above room temperature. We obtain TBC ~ 15 MW m –2 K –1 near room temperature, increasing as ~ T 0.65 in the range 300–600 K. The similar TBC of MoS 2 with the two substrates indicates that MoS 2 is the “softer” material with weaker phonon irradiance, and the relatively low TBC signifies that such interfaces present a key bottleneck in energy dissipation from 2D devices. As a result, our approach is needed to correctly perform Raman thermometry of 2D materials, and our findings are key for understanding energy coupling at the nanoscale.
Authors:
ORCiD logo [1] ;  [2] ; ORCiD logo [1] ; ORCiD logo [1] ;  [1] ;  [3] ;  [1] ; ORCiD logo [1] ;  [1] ;  [1] ;  [2] ; ORCiD logo [1]
  1. Stanford Univ., Stanford, CA (United States)
  2. Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
  3. Stanford Univ., Stanford, CA (United States); Univ. of Pittsburgh, Pittsburgh, PA (United States)
Publication Date:
Grant/Contract Number:
AC02-76SF00515; DGE-114747; EEC-1449548; 1542883; 1534279
Type:
Accepted Manuscript
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Volume: 9; Journal Issue: 49; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Research Org:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 2D materials; aluminum nitride (AlN); Kapitza length; MoS2; optical absorption; Raman thermometry; thermal boundary conductance (TBC)
OSTI Identifier:
1417661

Yalon, Eilam, Aslan, Ozgur Burak, Smithe, Kirby K. H., McClellan, Connor J., Suryavanshi, Saurabh V., Xiong, Feng, Sood, Aditya, Neumann, Christopher M., Xu, Xiaoqing, Goodson, Kenneth E., Heinz, Tony F., and Pop, Eric. Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS2 by Raman Thermometry. United States: N. p., Web. doi:10.1021/acsami.7b11641.
Yalon, Eilam, Aslan, Ozgur Burak, Smithe, Kirby K. H., McClellan, Connor J., Suryavanshi, Saurabh V., Xiong, Feng, Sood, Aditya, Neumann, Christopher M., Xu, Xiaoqing, Goodson, Kenneth E., Heinz, Tony F., & Pop, Eric. Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS2 by Raman Thermometry. United States. doi:10.1021/acsami.7b11641.
Yalon, Eilam, Aslan, Ozgur Burak, Smithe, Kirby K. H., McClellan, Connor J., Suryavanshi, Saurabh V., Xiong, Feng, Sood, Aditya, Neumann, Christopher M., Xu, Xiaoqing, Goodson, Kenneth E., Heinz, Tony F., and Pop, Eric. 2017. "Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS2 by Raman Thermometry". United States. doi:10.1021/acsami.7b11641. https://www.osti.gov/servlets/purl/1417661.
@article{osti_1417661,
title = {Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS2 by Raman Thermometry},
author = {Yalon, Eilam and Aslan, Ozgur Burak and Smithe, Kirby K. H. and McClellan, Connor J. and Suryavanshi, Saurabh V. and Xiong, Feng and Sood, Aditya and Neumann, Christopher M. and Xu, Xiaoqing and Goodson, Kenneth E. and Heinz, Tony F. and Pop, Eric},
abstractNote = {The electrical and thermal behavior of nanoscale devices based on two-dimensional (2D) materials is often limited by their contacts and interfaces. Here we report the temperature-dependent thermal boundary conductance (TBC) of monolayer MoS2 with AlN and SiO2, using Raman thermometry with laser-induced heating. The temperature-dependent optical absorption of the 2D material is crucial in such experiments, which we characterize here for the first time above room temperature. We obtain TBC ~ 15 MW m–2 K–1 near room temperature, increasing as ~ T0.65 in the range 300–600 K. The similar TBC of MoS2 with the two substrates indicates that MoS2 is the “softer” material with weaker phonon irradiance, and the relatively low TBC signifies that such interfaces present a key bottleneck in energy dissipation from 2D devices. As a result, our approach is needed to correctly perform Raman thermometry of 2D materials, and our findings are key for understanding energy coupling at the nanoscale.},
doi = {10.1021/acsami.7b11641},
journal = {ACS Applied Materials and Interfaces},
number = 49,
volume = 9,
place = {United States},
year = {2017},
month = {10}
}