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Title: Bond Wire Damage Detection and SOH Estimation of a Dual Pack IGBT Power Module using Active Power Cycling and Reflectometry

Abstract

High thermal and electrical stress, over a period of time tends to cause deterioration of the health of power electronic switches. A huge fraction of research efforts involves the study of power electronic device reliability and development of novel techniques with higher accuracy in health estimation of such devices. Until today, no other existing techniques can determine the number of lifted bond wires and their locations in a live IGBT module. Through this paper, a new method for online condition monitoring of IGBTs and IGBT modules using SSTDR has been proposed. Unlike traditional methods, this research work concentrates at the gate terminals of the device instead of looking at the collector side. In addition, the RL-equivalent circuit to represent a bond wire has been developed for the DUT and simulated in CST Studio Suite to measure the reflection amplitudes. Both the experimental and simulation results have been compared. These results prove that a single measurement is sufficient to predict the failure of the device instead of looking at the traditional precursor parameter. With only two sets of measurements, it is possible to locate the aged device inside a module and detect the number of bond wire lift offs associated tomore » that device.« less

Authors:
 [1]; ORCiD logo [2];  [1]
  1. Univ. of Missouri, Kansas City, MO (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE National Renewable Energy Laboratory (NREL), Laboratory Directed Research and Development (LDRD) Program
OSTI Identifier:
1600903
Report Number(s):
NREL/JA-5400-72669
Journal ID: ISSN 0885-8993; MainId:12306;UUID:0ec381b8-13d6-e811-9c19-ac162d87dfe5;MainAdminID:786
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Power Electronics
Additional Journal Information:
Journal Volume: 35; Journal Issue: 7; Journal ID: ISSN 0885-8993
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
30 DIRECT ENERGY CONVERSION; 47 OTHER INSTRUMENTATION; power electronics; reliability; spread spectrum time domain reflectometry; SSTDR; accelerated aging; IGBT condition monitoring; failure precursor and mechanism; lifetime estimation

Citation Formats

Hanif, Abu, DeVoto, Douglas J., and Khan, Faisal. Bond Wire Damage Detection and SOH Estimation of a Dual Pack IGBT Power Module using Active Power Cycling and Reflectometry. United States: N. p., 2019. Web. https://doi.org/10.1109/TPEL.2019.2958898.
Hanif, Abu, DeVoto, Douglas J., & Khan, Faisal. Bond Wire Damage Detection and SOH Estimation of a Dual Pack IGBT Power Module using Active Power Cycling and Reflectometry. United States. https://doi.org/10.1109/TPEL.2019.2958898
Hanif, Abu, DeVoto, Douglas J., and Khan, Faisal. Tue . "Bond Wire Damage Detection and SOH Estimation of a Dual Pack IGBT Power Module using Active Power Cycling and Reflectometry". United States. https://doi.org/10.1109/TPEL.2019.2958898. https://www.osti.gov/servlets/purl/1600903.
@article{osti_1600903,
title = {Bond Wire Damage Detection and SOH Estimation of a Dual Pack IGBT Power Module using Active Power Cycling and Reflectometry},
author = {Hanif, Abu and DeVoto, Douglas J. and Khan, Faisal},
abstractNote = {High thermal and electrical stress, over a period of time tends to cause deterioration of the health of power electronic switches. A huge fraction of research efforts involves the study of power electronic device reliability and development of novel techniques with higher accuracy in health estimation of such devices. Until today, no other existing techniques can determine the number of lifted bond wires and their locations in a live IGBT module. Through this paper, a new method for online condition monitoring of IGBTs and IGBT modules using SSTDR has been proposed. Unlike traditional methods, this research work concentrates at the gate terminals of the device instead of looking at the collector side. In addition, the RL-equivalent circuit to represent a bond wire has been developed for the DUT and simulated in CST Studio Suite to measure the reflection amplitudes. Both the experimental and simulation results have been compared. These results prove that a single measurement is sufficient to predict the failure of the device instead of looking at the traditional precursor parameter. With only two sets of measurements, it is possible to locate the aged device inside a module and detect the number of bond wire lift offs associated to that device.},
doi = {10.1109/TPEL.2019.2958898},
journal = {IEEE Transactions on Power Electronics},
number = 7,
volume = 35,
place = {United States},
year = {2019},
month = {12}
}

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