skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Bond Wire Damage Detection and State of Health Estimation of a 1200V, 900A Dual Pack IGBT Power Module using the RL-Equivalent Circuit

Abstract

Electrical and environmental stresses are the two dominant contributors in aging and failure of power semiconductor devices. Insulated gate bipolar junction transistors (IGBTs) and metal-oxide semiconductor field effect transistors (MOSFETs) are two most commonly used switching devices in power converter circuits. A significant portion of research effort is given in inventing innovative methods to estimate the degradation and fatigue in these devices. Until today, no other existing techniques can determine the number of lifted bond wires and their locations in a live IGBT module, although this information is extremely helpful to understand the overall state of health of an IGBT power module. In this paper, we have proposed a reflectometry-based technique to overcome this hurdle. The RL-equivalent circuit to represent a bond wire has been developed for the device under test and simulated in CST Studio Suite to measure the reflection amplitudes. Experimental results were obtained using a prototype reflectometry hardware, and both the simulation and experimental results have been compared. These results prove that with these two sets of measurements, it is possible to locate the aged device inside a module and detect the number of bond wire lift-offs associated to that device.

Authors:
 [1];  [2]; ORCiD logo [2];  [1]
  1. University of Missouri, Kansas City
  2. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Vehicle Technologies Office (EE-3V); USDOE National Renewable Energy Laboratory (NREL), Laboratory Directed Research and Development (LDRD) Program
OSTI Identifier:
1542751
Report Number(s):
NREL/CP-5400-72670
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 2019 IEEE Applied Power Electronics Conference and Exposition (APEC), 17-21 March 2019, Anaheim, California
Country of Publication:
United States
Language:
English
Subject:
30 DIRECT ENERGY CONVERSION; aging; condition monitoring; bond wire lift-off; RL-equivalent approach; IGBT; SSTDR

Citation Formats

Hanif, Abu, Major, Joshua, DeVoto, Douglas J, and Khan, Faisal. Bond Wire Damage Detection and State of Health Estimation of a 1200V, 900A Dual Pack IGBT Power Module using the RL-Equivalent Circuit. United States: N. p., 2019. Web. doi:10.1109/APEC.2019.8722046.
Hanif, Abu, Major, Joshua, DeVoto, Douglas J, & Khan, Faisal. Bond Wire Damage Detection and State of Health Estimation of a 1200V, 900A Dual Pack IGBT Power Module using the RL-Equivalent Circuit. United States. doi:10.1109/APEC.2019.8722046.
Hanif, Abu, Major, Joshua, DeVoto, Douglas J, and Khan, Faisal. Mon . "Bond Wire Damage Detection and State of Health Estimation of a 1200V, 900A Dual Pack IGBT Power Module using the RL-Equivalent Circuit". United States. doi:10.1109/APEC.2019.8722046.
@article{osti_1542751,
title = {Bond Wire Damage Detection and State of Health Estimation of a 1200V, 900A Dual Pack IGBT Power Module using the RL-Equivalent Circuit},
author = {Hanif, Abu and Major, Joshua and DeVoto, Douglas J and Khan, Faisal},
abstractNote = {Electrical and environmental stresses are the two dominant contributors in aging and failure of power semiconductor devices. Insulated gate bipolar junction transistors (IGBTs) and metal-oxide semiconductor field effect transistors (MOSFETs) are two most commonly used switching devices in power converter circuits. A significant portion of research effort is given in inventing innovative methods to estimate the degradation and fatigue in these devices. Until today, no other existing techniques can determine the number of lifted bond wires and their locations in a live IGBT module, although this information is extremely helpful to understand the overall state of health of an IGBT power module. In this paper, we have proposed a reflectometry-based technique to overcome this hurdle. The RL-equivalent circuit to represent a bond wire has been developed for the device under test and simulated in CST Studio Suite to measure the reflection amplitudes. Experimental results were obtained using a prototype reflectometry hardware, and both the simulation and experimental results have been compared. These results prove that with these two sets of measurements, it is possible to locate the aged device inside a module and detect the number of bond wire lift-offs associated to that device.},
doi = {10.1109/APEC.2019.8722046},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {5}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share: