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Title: A power-cycling-induced failure mechanism in IGBT multichip modules

Abstract

Catastrophic burn-out occurring during power-cycling of Insulated Gate Bipolar Transistors (IGBT) multichip modules have been observed to arise as a secondary failure mechanism caused by the lifting of the emitter aluminum bonding wires. In effect, the successive lift-off of the aluminum wires results in a current crowding through few IGBT cells with consequent triggering of the internal parasitic thyristor-structure. Basing on failure analysis data, this paper presents a simple qualitative model for the time dependent lift-off of aluminum bondwires in IGBT modules occurring during either field operation, or accelerated tests. This power-cycling induced failure mechanism is described in terms of the reconstruction of the aluminum interconnection as consequence of plastic deformation. Some practical conclusions are finally drawn for power cycle testing and for optimal thermal design.

Authors:
;  [1];  [2]
  1. Swiss Federal Inst. of Tech. (ETH), Zuerich (Switzerland)
  2. Schindler Ascensorie E. Motori SA, Locarno (Switzerland)
Publication Date:
OSTI Identifier:
260527
Report Number(s):
CONF-951156-
ISBN 0-87170-554-0; TRN: IM9632%%169
Resource Type:
Book
Resource Relation:
Conference: ISTFA `95: 21. international symposium for testing and failure analysis, Santa Clara, CA (United States), 5-10 Nov 1995; Other Information: PBD: 1995; Related Information: Is Part Of ISTFA `95: Conference proceedings; PB: 381 p.
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; TRANSISTORS; FAILURES; ELECTRIC CURRENTS; SYSTEM FAILURE ANALYSIS; TESTING; EXPERIMENTAL DATA; MATHEMATICAL MODELS

Citation Formats

Malberti, P, Ciappa, M, and Cattomio, R. A power-cycling-induced failure mechanism in IGBT multichip modules. United States: N. p., 1995. Web.
Malberti, P, Ciappa, M, & Cattomio, R. A power-cycling-induced failure mechanism in IGBT multichip modules. United States.
Malberti, P, Ciappa, M, and Cattomio, R. 1995. "A power-cycling-induced failure mechanism in IGBT multichip modules". United States.
@article{osti_260527,
title = {A power-cycling-induced failure mechanism in IGBT multichip modules},
author = {Malberti, P and Ciappa, M and Cattomio, R},
abstractNote = {Catastrophic burn-out occurring during power-cycling of Insulated Gate Bipolar Transistors (IGBT) multichip modules have been observed to arise as a secondary failure mechanism caused by the lifting of the emitter aluminum bonding wires. In effect, the successive lift-off of the aluminum wires results in a current crowding through few IGBT cells with consequent triggering of the internal parasitic thyristor-structure. Basing on failure analysis data, this paper presents a simple qualitative model for the time dependent lift-off of aluminum bondwires in IGBT modules occurring during either field operation, or accelerated tests. This power-cycling induced failure mechanism is described in terms of the reconstruction of the aluminum interconnection as consequence of plastic deformation. Some practical conclusions are finally drawn for power cycle testing and for optimal thermal design.},
doi = {},
url = {https://www.osti.gov/biblio/260527}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {12}
}

Book:
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