Bond Wire Damage Detection and SOH Estimation of a Dual Pack IGBT Power Module using Active Power Cycling and Reflectometry

Hanif, Abu; DeVoto, Douglas J.; Khan, Faisal

doi:10.1109/TPEL.2019.2958898

Title: Bond Wire Damage Detection and SOH Estimation of a Dual Pack IGBT Power Module using Active Power Cycling and Reflectometry

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Abstract

High thermal and electrical stress, over a period of time tends to cause deterioration of the health of power electronic switches. A huge fraction of research efforts involves the study of power electronic device reliability and development of novel techniques with higher accuracy in health estimation of such devices. Until today, no other existing techniques can determine the number of lifted bond wires and their locations in a live IGBT module. Through this paper, a new method for online condition monitoring of IGBTs and IGBT modules using SSTDR has been proposed. Unlike traditional methods, this research work concentrates at the gate terminals of the device instead of looking at the collector side. In addition, the RL-equivalent circuit to represent a bond wire has been developed for the DUT and simulated in CST Studio Suite to measure the reflection amplitudes. Both the experimental and simulation results have been compared. These results prove that a single measurement is sufficient to predict the failure of the device instead of looking at the traditional precursor parameter. With only two sets of measurements, it is possible to locate the aged device inside a module and detect the number of bond wire lift offs associated tomore » that device.« less

Authors:

Hanif, Abu ^[1];

^[2]; Khan, Faisal ^[1]

Univ. of Missouri, Kansas City, MO (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

Publication Date:: Tue Dec 10 00:00:00 EST 2019

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE National Renewable Energy Laboratory (NREL), Laboratory Directed Research and Development (LDRD) Program

OSTI Identifier:: 1600903

Report Number(s):: NREL/JA-5400-72669
Journal ID: ISSN 0885-8993; MainId:12306;UUID:0ec381b8-13d6-e811-9c19-ac162d87dfe5;MainAdminID:786

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Transactions on Power Electronics

Additional Journal Information:: Journal Volume: 35; Journal Issue: 7; Journal ID: ISSN 0885-8993

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 30 DIRECT ENERGY CONVERSION; 47 OTHER INSTRUMENTATION; power electronics; reliability; spread spectrum time domain reflectometry; SSTDR; accelerated aging; IGBT condition monitoring; failure precursor and mechanism; lifetime estimation

Citation Formats


                    Hanif, Abu, DeVoto, Douglas J., and Khan, Faisal. Bond Wire Damage Detection and SOH Estimation of a Dual Pack IGBT Power Module using Active Power Cycling and Reflectometry.  United States: N. p., 2019. 
Web.  doi:10.1109/TPEL.2019.2958898.

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                    Hanif, Abu, DeVoto, Douglas J., & Khan, Faisal. Bond Wire Damage Detection and SOH Estimation of a Dual Pack IGBT Power Module using Active Power Cycling and Reflectometry.  United States.  https://doi.org/10.1109/TPEL.2019.2958898

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                    Hanif, Abu, DeVoto, Douglas J., and Khan, Faisal. Tue .  
"Bond Wire Damage Detection and SOH Estimation of a Dual Pack IGBT Power Module using Active Power Cycling and Reflectometry".  United States.  https://doi.org/10.1109/TPEL.2019.2958898.  https://www.osti.gov/servlets/purl/1600903.

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@article{osti_1600903,

  title        = {Bond Wire Damage Detection and SOH Estimation of a Dual Pack IGBT Power Module using Active Power Cycling and Reflectometry},

  author       = {Hanif, Abu and DeVoto, Douglas J. and Khan, Faisal},

  abstractNote = {High thermal and electrical stress, over a period of time tends to cause deterioration of the health of power electronic switches. A huge fraction of research efforts involves the study of power electronic device reliability and development of novel techniques with higher accuracy in health estimation of such devices. Until today, no other existing techniques can determine the number of lifted bond wires and their locations in a live IGBT module. Through this paper, a new method for online condition monitoring of IGBTs and IGBT modules using SSTDR has been proposed. Unlike traditional methods, this research work concentrates at the gate terminals of the device instead of looking at the collector side. In addition, the RL-equivalent circuit to represent a bond wire has been developed for the DUT and simulated in CST Studio Suite to measure the reflection amplitudes. Both the experimental and simulation results have been compared. These results prove that a single measurement is sufficient to predict the failure of the device instead of looking at the traditional precursor parameter. With only two sets of measurements, it is possible to locate the aged device inside a module and detect the number of bond wire lift offs associated to that device.},

  doi          = {10.1109/TPEL.2019.2958898},

  journal      = {IEEE Transactions on Power Electronics},

  number       = 7,

  volume       = 35,

  place        = {United States},

  year         = {Tue Dec 10 00:00:00 EST 2019},

  month        = {Tue Dec 10 00:00:00 EST 2019}

}

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