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Title: Mie-type GaAs nanopillar array resonators for negative electron affinity photocathodes

Abstract

This paper presents modeling results of Mie-type GaAs nanopillar array resonant structures and the design of negative electron affinity photocathodes based on Spicer’s three-step model. For direct-bandgap GaAs with high intrinsic absorption coefficient in the 500 ~ 850 nm spectral range, photoelectrons were found to be highly localized inside the nanopillars near the top and side surfaces where electrons can be efficiently transported and emitted into vacuum, and the light reflectance can be reduced to ~1% level at resonance wavelengths. Predictions of spectrally resolved photoemission indicate that these nanophotonics resonators, when properly optimized, can increase the photo-electron emission quantum efficiency at resonance wavelengths to levels limited only by the surface-electron escape probability, significantly outperforming traditional flat wafer photocathodes. Ultrafast photoelectric response is also expected from these nanostructured photocathodes due to the much shorter photoelectron transport distance in nanopillars compared to flat wafers. Given these unique optoelectronic properties, GaAs nanophotonic resonance structured photocathodes represent a very promising alternative to photocathodes with flat surfaces that are widely used in many applications today.

Authors:
ORCiD logo; ; ; ; ;
Publication Date:
Research Org.:
Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Nuclear Physics (NP) (SC-26); National Natural Science Foundation of China (NNSFC)
OSTI Identifier:
1581217
Alternate Identifier(s):
OSTI ID: 1607854
Report Number(s):
JLAB-ACC-19-3144; DOE/OR/23177-4952
Journal ID: ISSN 1094-4087; OPEXFF
Grant/Contract Number:  
AC05-06OR23177; 11875012; 61204071; 61661002
Resource Type:
Published Article
Journal Name:
Optics Express
Additional Journal Information:
Journal Name: Optics Express Journal Volume: 28 Journal Issue: 2; Journal ID: ISSN 1094-4087
Publisher:
Optical Society of America
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Peng, Xincun, Poelker, Matt, Stutzman, Marcy, Tang, Bin, Zhang, Shukui, and Zou, Jijun. Mie-type GaAs nanopillar array resonators for negative electron affinity photocathodes. United States: N. p., 2020. Web. doi:10.1364/OE.378194.
Peng, Xincun, Poelker, Matt, Stutzman, Marcy, Tang, Bin, Zhang, Shukui, & Zou, Jijun. Mie-type GaAs nanopillar array resonators for negative electron affinity photocathodes. United States. doi:10.1364/OE.378194.
Peng, Xincun, Poelker, Matt, Stutzman, Marcy, Tang, Bin, Zhang, Shukui, and Zou, Jijun. Mon . "Mie-type GaAs nanopillar array resonators for negative electron affinity photocathodes". United States. doi:10.1364/OE.378194.
@article{osti_1581217,
title = {Mie-type GaAs nanopillar array resonators for negative electron affinity photocathodes},
author = {Peng, Xincun and Poelker, Matt and Stutzman, Marcy and Tang, Bin and Zhang, Shukui and Zou, Jijun},
abstractNote = {This paper presents modeling results of Mie-type GaAs nanopillar array resonant structures and the design of negative electron affinity photocathodes based on Spicer’s three-step model. For direct-bandgap GaAs with high intrinsic absorption coefficient in the 500 ~ 850 nm spectral range, photoelectrons were found to be highly localized inside the nanopillars near the top and side surfaces where electrons can be efficiently transported and emitted into vacuum, and the light reflectance can be reduced to ~1% level at resonance wavelengths. Predictions of spectrally resolved photoemission indicate that these nanophotonics resonators, when properly optimized, can increase the photo-electron emission quantum efficiency at resonance wavelengths to levels limited only by the surface-electron escape probability, significantly outperforming traditional flat wafer photocathodes. Ultrafast photoelectric response is also expected from these nanostructured photocathodes due to the much shorter photoelectron transport distance in nanopillars compared to flat wafers. Given these unique optoelectronic properties, GaAs nanophotonic resonance structured photocathodes represent a very promising alternative to photocathodes with flat surfaces that are widely used in many applications today.},
doi = {10.1364/OE.378194},
journal = {Optics Express},
number = 2,
volume = 28,
place = {United States},
year = {2020},
month = {1}
}

Journal Article:
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DOI: 10.1364/OE.378194

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