Optical-Resonance-Enhanced Photoemission from Nanostructured GaAs Photocathodes

Peng, Xincun; Wang, Zhidong; Liu, Yun; Manos, Dennis M.; Poelker, Matt; Stutzman, Marcy; Tang, Bin; Zhang, Shukui; Zou, Jijun

doi:10.1103/PhysRevApplied.12.064002

Title: Optical-Resonance-Enhanced Photoemission from Nanostructured $Ga As$ Photocathodes

Journal Article · 01 December 2019 · Physical Review Applied

DOI: https://doi.org/10.1103/PhysRevApplied.12.064002 · OSTI ID:1577074

^[1]; Wang, Zhidong ^[2]; Liu, Yun ^[2]; Manos, Dennis M. ^[3]; Poelker, Matt ^[4]; Stutzman, Marcy ^[4]; Tang, Bin ^[2]; Zhang, Shukui ^[4]; Zou, Jijun ^[5]

East China Univ. of Technology, Nanchang (China). Engineering Research Center of New Energy Technology of Jiangxi Province; Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
East China Univ. of Technology, Nanchang (China). Engineering Research Center of New Energy Technology of Jiangxi Province
College of William and Mary, Williamsburg, VA (United States)
Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
East China Univ. of Technology, Nanchang (China). Engineering Research Center of New Energy Technology of Jiangxi Province; Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); College of William and Mary, Williamsburg, VA (United States)

A negative electron affinity photocathode based on GaAs nanopillar-array (NPA) Mie-type resonators is demonstrated and significant quantum efficiency enhancement is observed. Nanophotonic resonance assisted photoelectron emission into vacuum is investigated, indicating an enhanced density of optical states due to increased light concentration and increased electron emission area. For visible wavelengths, the Mie resonances in GaAs NPA reduce light reflectivity to less than 6% compared to a typical value >35% and result in maximum quantum efficiency 3.5 times greater than a GaAs wafer photocathode without the NPA structure. In conclusion, comprehensive simulations and experimental studies are presented.

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Research Organization:: Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)

Sponsoring Organization:: USDOE

OSTI ID:: 1577074

Report Number(s):: JLAB-ACC--19-3042; DOE/OR/23177--4781

Journal Information:: Physical Review Applied, Journal Name: Physical Review Applied Journal Issue: 6 Vol. 12; ISSN 2331-7019; ISSN PRAHB2

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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