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Title: Optical-Resonance-Enhanced Photoemission from Nanostructured Ga As Photocathodes

Abstract

A negative electron affinity photocathode based on GaAs nanopillar-array (NPA) Mie-type resonators is demonstrated and significant quantum efficiency enhancement is observed. Nanophotonic resonance assisted photoelectron emission into vacuum is investigated, indicating an enhanced density of optical states due to increased light concentration and increased electron emission area. For visible wavelengths, the Mie resonances in GaAs NPA reduce light reflectivity to less than 6% compared to a typical value >35% and result in maximum quantum efficiency 3.5 times greater than a GaAs wafer photocathode without the NPA structure. In conclusion, comprehensive simulations and experimental studies are presented.

Authors:
ORCiD logo [1];  [2];  [2];  [3];  [4];  [4];  [2];  [4];  [5]
+ Show Author Affiliations
  1. East China Univ. of Technology, Nanchang (China). Engineering Research Center of New Energy Technology of Jiangxi Province; Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
  2. East China Univ. of Technology, Nanchang (China). Engineering Research Center of New Energy Technology of Jiangxi Province
  3. College of William and Mary, Williamsburg, VA (United States)
  4. Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
  5. East China Univ. of Technology, Nanchang (China). Engineering Research Center of New Energy Technology of Jiangxi Province; Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); College of William and Mary, Williamsburg, VA (United States)
Publication Date:
Research Org.:
Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1577074
Report Number(s):
JLAB-ACC-19-3042; DOE/OR/23177-4781
Journal ID: ISSN 2331-7019; PRAHB2; TRN: US2102131
Grant/Contract Number:  
11875012; 61204071; 61661002
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 12; Journal Issue: 6; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS

Citation Formats

Peng, Xincun, Wang, Zhidong, Liu, Yun, Manos, Dennis M., Poelker, Matt, Stutzman, Marcy, Tang, Bin, Zhang, Shukui, and Zou, Jijun. Optical-Resonance-Enhanced Photoemission from Nanostructured GaAs Photocathodes. United States: N. p., 2019. Web. doi:10.1103/PhysRevApplied.12.064002.
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Peng, Xincun, Wang, Zhidong, Liu, Yun, Manos, Dennis M., Poelker, Matt, Stutzman, Marcy, Tang, Bin, Zhang, Shukui, & Zou, Jijun. Optical-Resonance-Enhanced Photoemission from Nanostructured GaAs Photocathodes. United States. https://doi.org/10.1103/PhysRevApplied.12.064002
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Peng, Xincun, Wang, Zhidong, Liu, Yun, Manos, Dennis M., Poelker, Matt, Stutzman, Marcy, Tang, Bin, Zhang, Shukui, and Zou, Jijun. Mon . "Optical-Resonance-Enhanced Photoemission from Nanostructured GaAs Photocathodes". United States. https://doi.org/10.1103/PhysRevApplied.12.064002. https://www.osti.gov/servlets/purl/1577074.
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@article{osti_1577074,
title = {Optical-Resonance-Enhanced Photoemission from Nanostructured GaAs Photocathodes},
author = {Peng, Xincun and Wang, Zhidong and Liu, Yun and Manos, Dennis M. and Poelker, Matt and Stutzman, Marcy and Tang, Bin and Zhang, Shukui and Zou, Jijun},
abstractNote = {A negative electron affinity photocathode based on GaAs nanopillar-array (NPA) Mie-type resonators is demonstrated and significant quantum efficiency enhancement is observed. Nanophotonic resonance assisted photoelectron emission into vacuum is investigated, indicating an enhanced density of optical states due to increased light concentration and increased electron emission area. For visible wavelengths, the Mie resonances in GaAs NPA reduce light reflectivity to less than 6% compared to a typical value >35% and result in maximum quantum efficiency 3.5 times greater than a GaAs wafer photocathode without the NPA structure. In conclusion, comprehensive simulations and experimental studies are presented.},
doi = {10.1103/PhysRevApplied.12.064002},
journal = {Physical Review Applied},
number = 6,
volume = 12,
place = {United States},
year = {2019},
month = {12}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1103/PhysRevApplied.12.064002
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