Negative Electron Affinity Gallium Arsenide Photocathodes Based on Optically Resonant Nanostructure

Conference · Sun Jul 01 00:00:00 EDT 2018

DOI:https://doi.org/10.18429/JACoW-IPAC2018-THPMK111· OSTI ID:1473857

Zhang, Shukui ^[1]; Poelker, Matt ^[1]; Stutzman, Marcy L. ^[1]; Peng, X. ^[2]; Zou, J. ^[2]

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1. Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
2. East China University of Science and Technology, Shanghai (China)

We report the design and fabrication of a new type of negative electron affinity (NEA) gallium arsenide (GaAs)photocathode with optically resonant nanostructures. We observed a significant enhancement of the quantum efficiency(QE) from the GaAs photocathode with nanowire arrays (NWA) due to the Mie resonance effect within the intended wavelength range. Theoretical calculations of the expected reflectance behaviour together with experimental results of optical and photoemission characteristics are presented.

• Research Organization: Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Nuclear Physics (NP)
• DOE Contract Number: AC05-06OR23177
• OSTI ID: 1473857
• Report Number(s): JLAB-ACC-18-2729; DOE/OR/23177-4457
• Resource Relation: Conference: IPAC 2018, 29 Apr - 04 May 2018. Vancouver, BC Canada
• Country of Publication: United States
• Language: English