Reduction in the Number of Mg Acceptors with Al Concentration in Al x Ga1-x N
Abstract
High hole concentrations in Al x Ga1-x N become increasingly difficult to obtain as the Al mole fraction increases. The problem is believed to be related to compensation, extended defects, and the band gap of the alloy. Whereas electrical measurements are commonly used to measure hole density, we used electron paramagnetic resonance (EPR) spectroscopy to investigate a defect related to the neutral Mg acceptor. The amount and symmetry of neutral Mg in MOCVD-grown Al x Ga1-x N with x = 0 to 0.28 was monitored for films with different dislocation densities and surface conditions. EPR measurements indicated that the amount of neutral Mg decreased by 60% in 900°C-annealed Al x Ga1-x N films for x = 0.18 and 0.28 as compared with x = 0.00 and 0.08. A decrease in the angular dependence of the EPR signal accompanied the increased x, suggesting a change in the local environment of the Mg. Neither dislocation density nor annealing conditions contribute to the reduced amount of neutral Mg in samples with the higher Al concentration. Rather, compensation is the simplest explanation of the observations, because a donor could both reduce the number of neutral acceptors and cause the variation in the angular dependence.
- Authors:
-
- Univ. of Alabama, Birmingham, AL (United States). Dept. of Physics
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Alabama, Birmingham, AL (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)
- OSTI Identifier:
- 1497640
- Report Number(s):
- SAND2014-17634J
Journal ID: ISSN 0361-5235; 672373
- Grant/Contract Number:
- AC04-94AL85000; DMR1006163
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Electronic Materials
- Additional Journal Information:
- Journal Volume: 44; Journal Issue: 11; Journal ID: ISSN 0361-5235
- Publisher:
- Springer
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; nitride; p-type; GaN; Mg; magnetic resonance
Citation Formats
Sunay, U. R., Zvanut, M. E., and Allerman, A. A. Reduction in the Number of Mg Acceptors with Al Concentration in Al x Ga1-x N. United States: N. p., 2014.
Web. doi:10.1007/s11664-014-3475-9.
Sunay, U. R., Zvanut, M. E., & Allerman, A. A. Reduction in the Number of Mg Acceptors with Al Concentration in Al x Ga1-x N. United States. https://doi.org/10.1007/s11664-014-3475-9
Sunay, U. R., Zvanut, M. E., and Allerman, A. A. Sat .
"Reduction in the Number of Mg Acceptors with Al Concentration in Al x Ga1-x N". United States. https://doi.org/10.1007/s11664-014-3475-9. https://www.osti.gov/servlets/purl/1497640.
@article{osti_1497640,
title = {Reduction in the Number of Mg Acceptors with Al Concentration in Al x Ga1-x N},
author = {Sunay, U. R. and Zvanut, M. E. and Allerman, A. A.},
abstractNote = {High hole concentrations in Al x Ga1-x N become increasingly difficult to obtain as the Al mole fraction increases. The problem is believed to be related to compensation, extended defects, and the band gap of the alloy. Whereas electrical measurements are commonly used to measure hole density, we used electron paramagnetic resonance (EPR) spectroscopy to investigate a defect related to the neutral Mg acceptor. The amount and symmetry of neutral Mg in MOCVD-grown Al x Ga1-x N with x = 0 to 0.28 was monitored for films with different dislocation densities and surface conditions. EPR measurements indicated that the amount of neutral Mg decreased by 60% in 900°C-annealed Al x Ga1-x N films for x = 0.18 and 0.28 as compared with x = 0.00 and 0.08. A decrease in the angular dependence of the EPR signal accompanied the increased x, suggesting a change in the local environment of the Mg. Neither dislocation density nor annealing conditions contribute to the reduced amount of neutral Mg in samples with the higher Al concentration. Rather, compensation is the simplest explanation of the observations, because a donor could both reduce the number of neutral acceptors and cause the variation in the angular dependence.},
doi = {10.1007/s11664-014-3475-9},
journal = {Journal of Electronic Materials},
number = 11,
volume = 44,
place = {United States},
year = {Sat Nov 01 00:00:00 EDT 2014},
month = {Sat Nov 01 00:00:00 EDT 2014}
}
Web of Science
Works referenced in this record:
Theoretical investigation of native defects, impurities, and complexes in aluminum nitride
journal, April 2002
- Stampfl, C.; Van de Walle, C. G.
- Physical Review B, Vol. 65, Issue 15
Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
journal, June 2012
- Kaun, Stephen W.; Wong, Man Hoi; Mishra, Umesh K.
- Applied Physics Letters, Vol. 100, Issue 26
Hole Compensation Mechanism of P-Type GaN Films
journal, May 1992
- Nakamura, Shuji; Iwasa, Naruhito; Senoh, Masayuki
- Japanese Journal of Applied Physics, Vol. 31, Issue Part 1, No. 5A
Role of nitrogen vacancies in the luminescence of Mg-doped GaN
journal, April 2012
- Yan, Qimin; Janotti, Anderson; Scheffler, Matthias
- Applied Physics Letters, Vol. 100, Issue 14
Mg in GaN: the structure of the acceptor and the electrical activity
journal, September 2003
- Alves, H.; Leiter, F.; Pfisterer, D.
- physica status solidi (c), Vol. 0, Issue 6
Nature of acceptor states in magnesium-doped gallium nitride
journal, May 2005
- Aliev, G. N.; Zeng, S.; Davies, J. J.
- Physical Review B, Vol. 71, Issue 19
The Roles of Threading Dislocations on Electrical Properties of AlGaN/GaN Heterostructure Grown by MBE
journal, January 2010
- Wong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi
- Journal of The Electrochemical Society, Vol. 157, Issue 7
Comparison of electrical properties and deep traps in p-AlxGa1−xN grown by molecular beam epitaxy and metal organic chemical vapor deposition
journal, October 2009
- Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.
- Journal of Applied Physics, Vol. 106, Issue 7
Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors
journal, April 2012
- Lyons, John L.; Janotti, Anderson; Van de Walle, Chris G.
- Physical Review Letters, Vol. 108, Issue 15
SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN
journal, January 2000
- Parish, G.; Keller, S.; Denbaars, S. P.
- Journal of Electronic Materials, Vol. 29, Issue 1
Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition
journal, February 2002
- Glaser, E. R.; Carlos, W. E.; Braga, G. C. B.
- Physical Review B, Vol. 65, Issue 8
Metastability of Oxygen Donors in AlGaN
journal, May 1998
- McCluskey, M. D.; Johnson, N. M.; Van de Walle, C. G.
- Physical Review Letters, Vol. 80, Issue 18
Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers
journal, June 2005
- Lee, S. R.; West, A. M.; Allerman, A. A.
- Applied Physics Letters, Vol. 86, Issue 24
P-type conductivity in bulk AlxGa1−xN and AlxGa1−xN/AlyGa1−yN superlattices with average Al mole fraction >20%
journal, April 2004
- Kim, J. K.; Waldron, E. L.; Li, Y. -L.
- Applied Physics Letters, Vol. 84, Issue 17