Test beam measurement of ams H35 HV-CMOS capacitively coupled pixel sensor prototypes with high-resistivity substrate
Abstract
In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO demonstrator, containing different diode and amplifier designs, was produced in ams H35 HV-CMOS technology using four different substrate resistivities spanning from 80-1000 ohm cm-1. A glueing process using a high-precision flip-chip machine was developed in order to capacitively couple the sensors to FE-I4 Readout ASIC using a thin layer of epoxy glue with good uniformity over a large surface. The resulting assemblies were measured in beam test at the Fermilab Test Beam Facilities with 120 GeV protons and CERN SPS H8 beamline using 180 GeV pions. The in-time efficiency and tracking properties measured for the different sensor types are shown to be compatible with the ATLAS ITk requirements for its pixel sensors.
- Authors:
-
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- Univ. de Geneve, Geneve (Switzerland)
- Univ. of Bern, Bern (Switzerland)
- Univ. of Tsukuba, Tsukuba (Japan)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Univ. of Oklahoma, Norman, OK (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States); Univ. of Science and Technology of China, Anhui (China)
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Univ. de Geneve, Geneve (Switzerland); Univ. of Liverpool, Liverpool (United Kingdom)
- Lancaster Univ., Lancaster (United Kingdom)
- Univ. de Geneve, Geneve (Switzerland); European Organization for Nuclear Research (CERN), Meyrin (Switzerland)
- Karlsruhe Institute of Technology (KIT), Karlsruhe (Germany)
- Univ. of Liverpool, Liverpool (United Kingdom)
- Univ. of Illinois Urbana Champaign, Urbana, IL (United States)
- Publication Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), High Energy Physics (HEP); Yukawa Institute for Theoretical Physics
- OSTI Identifier:
- 1491693
- Alternate Identifier(s):
- OSTI ID: 1558608
- Report Number(s):
- BNL-210892-2019-JAAM
Journal ID: ISSN 1748-0221
- Grant/Contract Number:
- SC0012704; AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Instrumentation
- Additional Journal Information:
- Journal Volume: 13; Journal Issue: 12; Journal ID: ISSN 1748-0221
- Publisher:
- Institute of Physics (IOP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; Solid state detectors; Radiation-hard detectors; Particle tracking detectors; Electronic; Analogue electronic circuits; Electronic detector readout concepts (solid-state); Front-end electronics for detector readout; VLSI circuits
Citation Formats
Benoit, Mathieu, Braccini, S., Casanova, R., Cavallaro, E., Chen, H., Chen, K., Bello, F. A. Di, Ferrere, D., Frizzell, D., Golling, T., Gonzalez-Sevilla, S., Grinstein, S., Iacobucci, G., Kiehn, M., Lanni, F., Liu, H., Metcalfe, J., Meng, L., Merlassino, C., Miucci, A., Muenstermann, D., Nessi, M., Okawa, H., Perić, I., Rimoldi, M., Ristić, B., Sultan, D. M. S., Terzo, S., Pinto, M. Vicente Barrero, Figueras, E. Vilella, Weber, M., Weston, T., Wu, W., Xie, J., Xu, L., Zaffaroni, E., and Zhang, M. Test beam measurement of ams H35 HV-CMOS capacitively coupled pixel sensor prototypes with high-resistivity substrate. United States: N. p., 2018.
Web. doi:10.1088/1748-0221/13/12/P12009.
Benoit, Mathieu, Braccini, S., Casanova, R., Cavallaro, E., Chen, H., Chen, K., Bello, F. A. Di, Ferrere, D., Frizzell, D., Golling, T., Gonzalez-Sevilla, S., Grinstein, S., Iacobucci, G., Kiehn, M., Lanni, F., Liu, H., Metcalfe, J., Meng, L., Merlassino, C., Miucci, A., Muenstermann, D., Nessi, M., Okawa, H., Perić, I., Rimoldi, M., Ristić, B., Sultan, D. M. S., Terzo, S., Pinto, M. Vicente Barrero, Figueras, E. Vilella, Weber, M., Weston, T., Wu, W., Xie, J., Xu, L., Zaffaroni, E., & Zhang, M. Test beam measurement of ams H35 HV-CMOS capacitively coupled pixel sensor prototypes with high-resistivity substrate. United States. https://doi.org/10.1088/1748-0221/13/12/P12009
Benoit, Mathieu, Braccini, S., Casanova, R., Cavallaro, E., Chen, H., Chen, K., Bello, F. A. Di, Ferrere, D., Frizzell, D., Golling, T., Gonzalez-Sevilla, S., Grinstein, S., Iacobucci, G., Kiehn, M., Lanni, F., Liu, H., Metcalfe, J., Meng, L., Merlassino, C., Miucci, A., Muenstermann, D., Nessi, M., Okawa, H., Perić, I., Rimoldi, M., Ristić, B., Sultan, D. M. S., Terzo, S., Pinto, M. Vicente Barrero, Figueras, E. Vilella, Weber, M., Weston, T., Wu, W., Xie, J., Xu, L., Zaffaroni, E., and Zhang, M. Tue .
"Test beam measurement of ams H35 HV-CMOS capacitively coupled pixel sensor prototypes with high-resistivity substrate". United States. https://doi.org/10.1088/1748-0221/13/12/P12009. https://www.osti.gov/servlets/purl/1491693.
@article{osti_1491693,
title = {Test beam measurement of ams H35 HV-CMOS capacitively coupled pixel sensor prototypes with high-resistivity substrate},
author = {Benoit, Mathieu and Braccini, S. and Casanova, R. and Cavallaro, E. and Chen, H. and Chen, K. and Bello, F. A. Di and Ferrere, D. and Frizzell, D. and Golling, T. and Gonzalez-Sevilla, S. and Grinstein, S. and Iacobucci, G. and Kiehn, M. and Lanni, F. and Liu, H. and Metcalfe, J. and Meng, L. and Merlassino, C. and Miucci, A. and Muenstermann, D. and Nessi, M. and Okawa, H. and Perić, I. and Rimoldi, M. and Ristić, B. and Sultan, D. M. S. and Terzo, S. and Pinto, M. Vicente Barrero and Figueras, E. Vilella and Weber, M. and Weston, T. and Wu, W. and Xie, J. and Xu, L. and Zaffaroni, E. and Zhang, M.},
abstractNote = {In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO demonstrator, containing different diode and amplifier designs, was produced in ams H35 HV-CMOS technology using four different substrate resistivities spanning from 80-1000 ohm cm-1. A glueing process using a high-precision flip-chip machine was developed in order to capacitively couple the sensors to FE-I4 Readout ASIC using a thin layer of epoxy glue with good uniformity over a large surface. The resulting assemblies were measured in beam test at the Fermilab Test Beam Facilities with 120 GeV protons and CERN SPS H8 beamline using 180 GeV pions. The in-time efficiency and tracking properties measured for the different sensor types are shown to be compatible with the ATLAS ITk requirements for its pixel sensors.},
doi = {10.1088/1748-0221/13/12/P12009},
journal = {Journal of Instrumentation},
number = 12,
volume = 13,
place = {United States},
year = {Tue Dec 04 00:00:00 EST 2018},
month = {Tue Dec 04 00:00:00 EST 2018}
}
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Works referencing / citing this record:
Development and application of a modular test system for the HV-CMOS pixel sensor R&D of the ATLAS HL-LHC upgrade
journal, June 2019
- Liu, H.; Benoit, M.; Chen, H.
- Radiation Detection Technology and Methods, Vol. 3, Issue 3