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Title: Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

Journal Article · · Journal of Instrumentation
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  1. Univ. of Geneva, Geneve 4 (Switzerland)
  2. Univ. of Bern, Bern (Switzerland)
  3. Univ. of Liverpool, Liverpool (United Kingdom)
  4. Brookhaven National Lab. (BNL), Upton, NY (United States)
  5. Brookhaven National Lab. (BNL), Upton, NY (United States); Univ. of Science and Technology of China, Anhui (China)
  6. Univ. of Geneva, Geneve 4 (Switzerland); Univ. of Liverpool, Liverpool (United Kingdom)
  7. Lancaster Univ., Lancaster (United Kingdom)
  8. Univ. of Geneva, Geneve 4 (Switzerland); European Organization for Nuclear Research (CERN), Geneva (Switzerland)
  9. Univ. of Tsukuba, Ibaraki (Japan)
  10. Karlsruher Institut fur Technologie (KIT), Karlsruhe (Germany)

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1×1014 and 5×1015 1–MeV– neq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1×1015 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. Furthermore, the results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.

Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), High Energy Physics (HEP)
Grant/Contract Number:
SC0012704
OSTI ID:
1440359
Report Number(s):
BNL-205739-2018-JAAM; TRN: US1900727
Journal Information:
Journal of Instrumentation, Vol. 13, Issue 02; ISSN 1748-0221
Publisher:
Institute of Physics (IOP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 13 works
Citation information provided by
Web of Science

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Cited By (1)

A data acquisition system for HV-CMOS sensor research and development in the upgrade of ATLAS experiment journal June 2019