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Title: Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

Abstract

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1×1014 and 5×1015 1–MeV– neq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1×1015 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. Furthermore, the results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.

Authors:
 [1];  [2];  [3];  [4];  [4];  [1];  [1];  [1];  [1];  [1];  [1];  [4];  [5];  [6];  [2];  [2];  [7];  [8];  [9];  [10] more »;  [2];  [8];  [1];  [3];  [2];  [2];  [4];  [4];  [1] « less
+ Show Author Affiliations
  1. Univ. of Geneva, Geneve 4 (Switzerland)
  2. Univ. of Bern, Bern (Switzerland)
  3. Univ. of Liverpool, Liverpool (United Kingdom)
  4. Brookhaven National Lab. (BNL), Upton, NY (United States)
  5. Brookhaven National Lab. (BNL), Upton, NY (United States); Univ. of Science and Technology of China, Anhui (China)
  6. Univ. of Geneva, Geneve 4 (Switzerland); Univ. of Liverpool, Liverpool (United Kingdom)
  7. Lancaster Univ., Lancaster (United Kingdom)
  8. Univ. of Geneva, Geneve 4 (Switzerland); European Organization for Nuclear Research (CERN), Geneva (Switzerland)
  9. Univ. of Tsukuba, Ibaraki (Japan)
  10. Karlsruher Institut fur Technologie (KIT), Karlsruhe (Germany)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), High Energy Physics (HEP)
OSTI Identifier:
1440359
Report Number(s):
BNL-205739-2018-JAAM
Journal ID: ISSN 1748-0221; TRN: US1900727
Grant/Contract Number:  
SC0012704
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Instrumentation
Additional Journal Information:
Journal Volume: 13; Journal Issue: 02; Journal ID: ISSN 1748-0221
Publisher:
Institute of Physics (IOP)
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; Solid state detectors; Radiation-hard detectors; Particle tracking detectors; Electronic detector readout concepts (solid-state)

Citation Formats

Benoit, M., Braccini, S., Casse, G., Chen, H., Chen, K., Bello, F. A. Di, Ferrere, D., Golling, T., Gonzalez-Sevilla, S., Iacobucci, G., Kiehn, M., Lanni, F., Liu, H., Meng, L., Merlassino, C., Miucci, A., Muenstermann, Daniel, Nessi, M., Okawa, H., Peric, I., Rimoldi, M., Ristic, B., Pinto, M. Vicente Barrero, Vossebeld, J., Weber, M., Weston, T., Wu, W., Xu, L., and Zaffaroni, E. Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes. United States: N. p., 2018. Web. doi:10.1088/1748-0221/13/02/P02011.
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Benoit, M., Braccini, S., Casse, G., Chen, H., Chen, K., Bello, F. A. Di, Ferrere, D., Golling, T., Gonzalez-Sevilla, S., Iacobucci, G., Kiehn, M., Lanni, F., Liu, H., Meng, L., Merlassino, C., Miucci, A., Muenstermann, Daniel, Nessi, M., Okawa, H., Peric, I., Rimoldi, M., Ristic, B., Pinto, M. Vicente Barrero, Vossebeld, J., Weber, M., Weston, T., Wu, W., Xu, L., & Zaffaroni, E. Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes. United States. https://doi.org/10.1088/1748-0221/13/02/P02011
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Benoit, M., Braccini, S., Casse, G., Chen, H., Chen, K., Bello, F. A. Di, Ferrere, D., Golling, T., Gonzalez-Sevilla, S., Iacobucci, G., Kiehn, M., Lanni, F., Liu, H., Meng, L., Merlassino, C., Miucci, A., Muenstermann, Daniel, Nessi, M., Okawa, H., Peric, I., Rimoldi, M., Ristic, B., Pinto, M. Vicente Barrero, Vossebeld, J., Weber, M., Weston, T., Wu, W., Xu, L., and Zaffaroni, E. Thu . "Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes". United States. https://doi.org/10.1088/1748-0221/13/02/P02011. https://www.osti.gov/servlets/purl/1440359.
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@article{osti_1440359,
title = {Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes},
author = {Benoit, M. and Braccini, S. and Casse, G. and Chen, H. and Chen, K. and Bello, F. A. Di and Ferrere, D. and Golling, T. and Gonzalez-Sevilla, S. and Iacobucci, G. and Kiehn, M. and Lanni, F. and Liu, H. and Meng, L. and Merlassino, C. and Miucci, A. and Muenstermann, Daniel and Nessi, M. and Okawa, H. and Peric, I. and Rimoldi, M. and Ristic, B. and Pinto, M. Vicente Barrero and Vossebeld, J. and Weber, M. and Weston, T. and Wu, W. and Xu, L. and Zaffaroni, E.},
abstractNote = {HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1×1014 and 5×1015 1–MeV– neq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1×1015 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. Furthermore, the results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.},
doi = {10.1088/1748-0221/13/02/P02011},
journal = {Journal of Instrumentation},
number = 02,
volume = 13,
place = {United States},
year = {2018},
month = {2}
}
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https://doi.org/10.1088/1748-0221/13/02/P02011
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Works referenced in this record:

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A novel monolithic pixelated particle detector implemented in high-voltage CMOS technology
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Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype
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Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade
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Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process
journal, February 2016

The FE-I4 telescope for particle tracking in testbeam experiments
journal, July 2016

Prototype ATLAS IBL modules using the FE-I4A front-end readout chip
journal, November 2012

Charge collection studies in irradiated HV-CMOS particle detectors
journal, April 2016

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    Works referencing / citing this record:

    A data acquisition system for HV-CMOS sensor research and development in the upgrade of ATLAS experiment
    journal, June 2019

    • Chen, K.; Chen, H.; Lanni, F.
    • Review of Scientific Instruments, Vol. 90, Issue 6
    • DOI: 10.1063/1.5092714
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