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Title: Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4 th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1×10 14 and 5×10 15 1–MeV– n eq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1×10 15 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. Furthermore, the results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [4] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [4] ;  [5] ;  [6] ;  [2] ;  [2] ;  [7] ;  [8] ;  [9] ;  [10] more »;  [2] ;  [8] ;  [1] ;  [3] ;  [2] ;  [2] ;  [4] ;  [4] ;  [1] « less
  1. Univ. of Geneva, Geneve 4 (Switzerland)
  2. Univ. of Bern, Bern (Switzerland)
  3. Univ. of Liverpool, Liverpool (United Kingdom)
  4. Brookhaven National Lab. (BNL), Upton, NY (United States)
  5. Brookhaven National Lab. (BNL), Upton, NY (United States); Univ. of Science and Technology of China, Anhui (China)
  6. Univ. of Geneva, Geneve 4 (Switzerland); Univ. of Liverpool, Liverpool (United Kingdom)
  7. Lancaster Univ., Lancaster (United Kingdom)
  8. Univ. of Geneva, Geneve 4 (Switzerland); European Organization for Nuclear Research (CERN), Geneva (Switzerland)
  9. Univ. of Tsukuba, Ibaraki (Japan)
  10. Karlsruher Institut fur Technologie (KIT), Karlsruhe (Germany)
Publication Date:
Report Number(s):
BNL-205739-2018-JAAM
Journal ID: ISSN 1748-0221
Grant/Contract Number:
SC0012704
Type:
Accepted Manuscript
Journal Name:
Journal of Instrumentation
Additional Journal Information:
Journal Volume: 13; Journal Issue: 02; Journal ID: ISSN 1748-0221
Publisher:
Institute of Physics (IOP)
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; Solid state detectors; Radiation-hard detectors; Particle tracking detectors; Electronic detector readout concepts (solid-state)
OSTI Identifier:
1440359

Benoit, M., Braccini, S., Casse, G., Chen, H., Chen, K., Bello, F. A. Di, Ferrere, D., Golling, T., Gonzalez-Sevilla, S., Iacobucci, G., Kiehn, M., Lanni, F., Liu, H., Meng, L., Merlassino, C., Miucci, A., Muenstermann, Daniel, Nessi, M., Okawa, H., Peric, I., Rimoldi, M., Ristic, B., Pinto, M. Vicente Barrero, Vossebeld, J., Weber, M., Weston, T., Wu, W., Xu, L., and Zaffaroni, E.. Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes. United States: N. p., Web. doi:10.1088/1748-0221/13/02/P02011.
Benoit, M., Braccini, S., Casse, G., Chen, H., Chen, K., Bello, F. A. Di, Ferrere, D., Golling, T., Gonzalez-Sevilla, S., Iacobucci, G., Kiehn, M., Lanni, F., Liu, H., Meng, L., Merlassino, C., Miucci, A., Muenstermann, Daniel, Nessi, M., Okawa, H., Peric, I., Rimoldi, M., Ristic, B., Pinto, M. Vicente Barrero, Vossebeld, J., Weber, M., Weston, T., Wu, W., Xu, L., & Zaffaroni, E.. Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes. United States. doi:10.1088/1748-0221/13/02/P02011.
Benoit, M., Braccini, S., Casse, G., Chen, H., Chen, K., Bello, F. A. Di, Ferrere, D., Golling, T., Gonzalez-Sevilla, S., Iacobucci, G., Kiehn, M., Lanni, F., Liu, H., Meng, L., Merlassino, C., Miucci, A., Muenstermann, Daniel, Nessi, M., Okawa, H., Peric, I., Rimoldi, M., Ristic, B., Pinto, M. Vicente Barrero, Vossebeld, J., Weber, M., Weston, T., Wu, W., Xu, L., and Zaffaroni, E.. 2018. "Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes". United States. doi:10.1088/1748-0221/13/02/P02011. https://www.osti.gov/servlets/purl/1440359.
@article{osti_1440359,
title = {Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes},
author = {Benoit, M. and Braccini, S. and Casse, G. and Chen, H. and Chen, K. and Bello, F. A. Di and Ferrere, D. and Golling, T. and Gonzalez-Sevilla, S. and Iacobucci, G. and Kiehn, M. and Lanni, F. and Liu, H. and Meng, L. and Merlassino, C. and Miucci, A. and Muenstermann, Daniel and Nessi, M. and Okawa, H. and Peric, I. and Rimoldi, M. and Ristic, B. and Pinto, M. Vicente Barrero and Vossebeld, J. and Weber, M. and Weston, T. and Wu, W. and Xu, L. and Zaffaroni, E.},
abstractNote = {HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1×1014 and 5×1015 1–MeV– neq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1×1015 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. Furthermore, the results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.},
doi = {10.1088/1748-0221/13/02/P02011},
journal = {Journal of Instrumentation},
number = 02,
volume = 13,
place = {United States},
year = {2018},
month = {2}
}