Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes
- Univ. of Geneva, Geneve 4 (Switzerland)
- Univ. of Bern, Bern (Switzerland)
- Univ. of Liverpool, Liverpool (United Kingdom)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States); Univ. of Science and Technology of China, Anhui (China)
- Univ. of Geneva, Geneve 4 (Switzerland); Univ. of Liverpool, Liverpool (United Kingdom)
- Lancaster Univ., Lancaster (United Kingdom)
- Univ. of Geneva, Geneve 4 (Switzerland); European Organization for Nuclear Research (CERN), Geneva (Switzerland)
- Univ. of Tsukuba, Ibaraki (Japan)
- Karlsruher Institut fur Technologie (KIT), Karlsruhe (Germany)
HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1×1014 and 5×1015 1–MeV– neq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1×1015 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. Furthermore, the results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), High Energy Physics (HEP)
- Grant/Contract Number:
- SC0012704
- OSTI ID:
- 1440359
- Report Number(s):
- BNL-205739-2018-JAAM; TRN: US1900727
- Journal Information:
- Journal of Instrumentation, Vol. 13, Issue 02; ISSN 1748-0221
- Publisher:
- Institute of Physics (IOP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
A data acquisition system for HV-CMOS sensor research and development in the upgrade of ATLAS experiment
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journal | June 2019 |
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