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Title: Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses on the prototype chip "HVStripV1" (manufactured in the AMS HV-CMOS 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the HL-LHC environment. The results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of ≈2.4 and ≈2.8 for two active pixels on the test chip. As a result, there was also a notable increase in noise levels from 85 e to 386 e and from 75 e to 277 e for the corresponding pixels.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [5] ;  [4] ;  [3] ;  [6] ;  [4] ;  [7] ;  [8] ;  [8] ;  [7] ;  [9] ;  [10] ;  [10] ;  [10] ;  [11] ;  [7] more »;  [10] ;  [12] ;  [13] ;  [14] ;  [3] ;  [3] ;  [7] ;  [13] ;  [10] ;  [12] ;  [4] ;  [10] ;  [15] ;  [16] ;  [17] ;  [18] ;  [3] ;  [9] ;  [15] ;  [3] ;  [7] ;  [7] ;  [13] ;  [10] ;  [3] ;  [19] ;  [11] ;  [7] ;  [7] ;  [8] ;  [3] ;  [10] ;  [20] ;  [21] ;  [8] ;  [8] ;  [19] ;  [21] ;  [19] « less
  1. Univ. of Oxford, Oxford (United Kingdom); Univ. of Glasgow, Glasgow (United Kingdom)
  2. Univ. of Liverpool, Liverpool (United Kingdom)
  3. Univ. of Oxford, Oxford (United Kingdom)
  4. Univ. of Glasgow, Glasgow (United Kingdom)
  5. Univ. of Geneva, Geneva (Switzerland)
  6. European Organization for Nuclear Research (CERN), Geneva (Switzerland)
  7. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  8. Rutherford Appleton Lab., Didcot (United Kingdom)
  9. Karlsruhe Institute of Technology, Karlsruhe (Germany)
  10. Univ. of California, Santa Cruz, CA (United States)
  11. Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany)
  12. Jozef Stefan Institute, Ljubljana (Slovenia)
  13. Univ. of New Mexico, Albuquerque, NM (United States)
  14. Cambridge Univ., Cambridge (United Kingdom)
  15. Univ. of Oxford, Oxford (United Kingdom); Rutherford Appleton Lab., Didcot (United Kingdom)
  16. SLAC National Accelerator Lab., Menlo Park, CA (United States); Univ. of Geneva, Geneva (Switzerland)
  17. Jozef Stefan Institute, Ljubljana (Slovenia); Univ. of Ljubljana, Ljubljana (Slovenia)
  18. Univ. of Lancaster, Lancaster (United Kingdom)
  19. Institute of High Energy Physics, Beijing (People's Republic of China)
  20. Argonne National Lab. (ANL), Argonne, IL (United States)
  21. Univ. College London, London (United Kingdom)
Publication Date:
Grant/Contract Number:
AC02-76SF00515
Type:
Accepted Manuscript
Journal Name:
Journal of Instrumentation
Additional Journal Information:
Journal Volume: 12; Journal Issue: 02; Journal ID: ISSN 1748-0221
Publisher:
Institute of Physics (IOP)
Research Org:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; radiation-hard detectors; solid state detectors; Si microstrip and pad detectors
OSTI Identifier:
1353115

Kanisauskas, K., Affolder, A., Arndt, K., Bates, R., Benoit, M., Bello, F. Di, Blue, A., Bortoletto, D., Buckland, M., Buttar, C., Caragiulo, P., Das, D., Dopke, J., Dragone, A., Ehrler, F., Fadeyev, V., Galloway, Z., Grabas, H., Gregor, I. M., Grenier, P., Grillo, A., Hiti, B., Hoeferkamp, M., Hommels, L. B. A., Huffman, B. T., John, J., Kenney, C., Kramberger, J., Liang, Z., Mandic, I., Maneuski, D., Martinez-Mckinney, F., MacMahon, S., Meng, L., Mikuz, M., Muenstermann, D., Nickerson, R., Peric, I., Phillips, P., Plackett, R., Rubbo, F., Segal, J., Seidel, S., Seiden, A., Shipsey, I., Song, W., Staniztki, M., Su, D., Tamma, C., Turchetta, R., Vigani, L., Volk, J., Wang, R., Warren, M., Wilson, F., Worm, S., Xiu, Q., Zhang, J., and Zhu, H.. Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1. United States: N. p., Web. doi:10.1088/1748-0221/12/02/P02010.
Kanisauskas, K., Affolder, A., Arndt, K., Bates, R., Benoit, M., Bello, F. Di, Blue, A., Bortoletto, D., Buckland, M., Buttar, C., Caragiulo, P., Das, D., Dopke, J., Dragone, A., Ehrler, F., Fadeyev, V., Galloway, Z., Grabas, H., Gregor, I. M., Grenier, P., Grillo, A., Hiti, B., Hoeferkamp, M., Hommels, L. B. A., Huffman, B. T., John, J., Kenney, C., Kramberger, J., Liang, Z., Mandic, I., Maneuski, D., Martinez-Mckinney, F., MacMahon, S., Meng, L., Mikuz, M., Muenstermann, D., Nickerson, R., Peric, I., Phillips, P., Plackett, R., Rubbo, F., Segal, J., Seidel, S., Seiden, A., Shipsey, I., Song, W., Staniztki, M., Su, D., Tamma, C., Turchetta, R., Vigani, L., Volk, J., Wang, R., Warren, M., Wilson, F., Worm, S., Xiu, Q., Zhang, J., & Zhu, H.. Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1. United States. doi:10.1088/1748-0221/12/02/P02010.
Kanisauskas, K., Affolder, A., Arndt, K., Bates, R., Benoit, M., Bello, F. Di, Blue, A., Bortoletto, D., Buckland, M., Buttar, C., Caragiulo, P., Das, D., Dopke, J., Dragone, A., Ehrler, F., Fadeyev, V., Galloway, Z., Grabas, H., Gregor, I. M., Grenier, P., Grillo, A., Hiti, B., Hoeferkamp, M., Hommels, L. B. A., Huffman, B. T., John, J., Kenney, C., Kramberger, J., Liang, Z., Mandic, I., Maneuski, D., Martinez-Mckinney, F., MacMahon, S., Meng, L., Mikuz, M., Muenstermann, D., Nickerson, R., Peric, I., Phillips, P., Plackett, R., Rubbo, F., Segal, J., Seidel, S., Seiden, A., Shipsey, I., Song, W., Staniztki, M., Su, D., Tamma, C., Turchetta, R., Vigani, L., Volk, J., Wang, R., Warren, M., Wilson, F., Worm, S., Xiu, Q., Zhang, J., and Zhu, H.. 2017. "Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1". United States. doi:10.1088/1748-0221/12/02/P02010. https://www.osti.gov/servlets/purl/1353115.
@article{osti_1353115,
title = {Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1},
author = {Kanisauskas, K. and Affolder, A. and Arndt, K. and Bates, R. and Benoit, M. and Bello, F. Di and Blue, A. and Bortoletto, D. and Buckland, M. and Buttar, C. and Caragiulo, P. and Das, D. and Dopke, J. and Dragone, A. and Ehrler, F. and Fadeyev, V. and Galloway, Z. and Grabas, H. and Gregor, I. M. and Grenier, P. and Grillo, A. and Hiti, B. and Hoeferkamp, M. and Hommels, L. B. A. and Huffman, B. T. and John, J. and Kenney, C. and Kramberger, J. and Liang, Z. and Mandic, I. and Maneuski, D. and Martinez-Mckinney, F. and MacMahon, S. and Meng, L. and Mikuz, M. and Muenstermann, D. and Nickerson, R. and Peric, I. and Phillips, P. and Plackett, R. and Rubbo, F. and Segal, J. and Seidel, S. and Seiden, A. and Shipsey, I. and Song, W. and Staniztki, M. and Su, D. and Tamma, C. and Turchetta, R. and Vigani, L. and Volk, J. and Wang, R. and Warren, M. and Wilson, F. and Worm, S. and Xiu, Q. and Zhang, J. and Zhu, H.},
abstractNote = {CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses on the prototype chip "HVStripV1" (manufactured in the AMS HV-CMOS 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the HL-LHC environment. The results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of ≈2.4 and ≈2.8 for two active pixels on the test chip. As a result, there was also a notable increase in noise levels from 85 e– to 386 e– and from 75 e– to 277 e– for the corresponding pixels.},
doi = {10.1088/1748-0221/12/02/P02010},
journal = {Journal of Instrumentation},
number = 02,
volume = 12,
place = {United States},
year = {2017},
month = {2}
}