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Title: Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses on the prototype chip "HVStripV1" (manufactured in the AMS HV-CMOS 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the HL-LHC environment. The results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of ≈2.4 and ≈2.8 for two active pixels on the test chip. As a result, there was also a notable increase in noise levels from 85 e to 386 e and from 75 e to 277 e for the corresponding pixels.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [5] ;  [4] ;  [3] ;  [6] ;  [4] ;  [7] ;  [8] ;  [8] ;  [7] ;  [9] ;  [10] ;  [10] ;  [10] ;  [11] ;  [7] more »;  [10] ;  [12] ;  [13] ;  [14] ;  [3] ;  [3] ;  [7] ;  [13] ;  [10] ;  [12] ;  [4] ;  [10] ;  [15] ;  [16] ;  [17] ;  [18] ;  [3] ;  [9] ;  [15] ;  [3] ;  [7] ;  [7] ;  [13] ;  [10] ;  [3] ;  [19] ;  [11] ;  [7] ;  [7] ;  [8] ;  [3] ;  [10] ;  [20] ;  [21] ;  [8] ;  [8] ;  [19] ;  [21] ;  [19] « less
  1. Univ. of Oxford, Oxford (United Kingdom); Univ. of Glasgow, Glasgow (United Kingdom)
  2. Univ. of Liverpool, Liverpool (United Kingdom)
  3. Univ. of Oxford, Oxford (United Kingdom)
  4. Univ. of Glasgow, Glasgow (United Kingdom)
  5. Univ. of Geneva, Geneva (Switzerland)
  6. European Organization for Nuclear Research (CERN), Geneva (Switzerland)
  7. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  8. Rutherford Appleton Lab., Didcot (United Kingdom)
  9. Karlsruhe Institute of Technology, Karlsruhe (Germany)
  10. Univ. of California, Santa Cruz, CA (United States)
  11. Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany)
  12. Jozef Stefan Institute, Ljubljana (Slovenia)
  13. Univ. of New Mexico, Albuquerque, NM (United States)
  14. Cambridge Univ., Cambridge (United Kingdom)
  15. Univ. of Oxford, Oxford (United Kingdom); Rutherford Appleton Lab., Didcot (United Kingdom)
  16. SLAC National Accelerator Lab., Menlo Park, CA (United States); Univ. of Geneva, Geneva (Switzerland)
  17. Jozef Stefan Institute, Ljubljana (Slovenia); Univ. of Ljubljana, Ljubljana (Slovenia)
  18. Univ. of Lancaster, Lancaster (United Kingdom)
  19. Institute of High Energy Physics, Beijing (People's Republic of China)
  20. Argonne National Lab. (ANL), Argonne, IL (United States)
  21. Univ. College London, London (United Kingdom)
Publication Date:
Grant/Contract Number:
AC02-76SF00515
Type:
Accepted Manuscript
Journal Name:
Journal of Instrumentation
Additional Journal Information:
Journal Volume: 12; Journal Issue: 02; Journal ID: ISSN 1748-0221
Publisher:
Institute of Physics (IOP)
Research Org:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; radiation-hard detectors; solid state detectors; Si microstrip and pad detectors
OSTI Identifier:
1353115